• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.142.2-142.2
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• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Bulletin of the Korean Chemical Society
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• 제24권11호
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• 한국재료학회지
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• 제15권10호
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.327-330
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• 2010

$LiCoO_2$, a cathode material for lithium rechargeable batteries, was prepared in a nanoscale through a simple sonochemistry. First, $Co_3O_4$ nanoparticles were prepared by reacting NaOH and $CoCl_2$ or $CoSO_4$ with a sonochemical method, operated at 20 kHz and 220 W for 20 min, very powerful multibubble sonoluminescence conditions for chemical reactions. Second, LiOH was coated onto the $Co_3O_4$ nanoparticles by the same method as above. Finally, $LiCoO_2$ nanoparticles of about 10~30 nm size in diameter were obtained by the thermal treatment of the resulting LiOH-coated $Co_3O_4$ nanoparticles at $500^{\circ}C$ for 3 hr. This synthetic process is relatively quite mild and simple compared to the known method for the synthesis of $LiCoO_2$ nanoparticles. The materials synthesized were characterized by infrared spectroscopy, X-ray diffraction, inductively coupled plasma spectrometer, and high resolution-transmission electron microscopy analyses.

• 한국환경과학회지
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• 제22권1호
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• pp.73-81
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• 2013

The present work has been devoted to the catalytic reduction of $N_2O$ by $H_2$ with $Pt/SiO_2$ catalysts at very low temperatures, such as $110^{\circ}C$, and their nanoparticle sizes have been determined by using $H_2-N_2O$ titration, X-ray diffraction(XRD) and high-resolution transmission electron microscopy(HRTEM) measurements. A sample of 1.72% $Pt/SiO_2$, which had been prepared by an ion exchange method, consisted of almost atomic levels of Pt nanoparticles with 1.16 nm that are very consistent with the HRTEM measurements, while a $Pt/SiO_2$ catalyst possessing the same Pt amount via an incipient wetness technique did 13.5 nm particles as determined by the XRD measurements. These two catalysts showed a noticeable difference in the on-stream $deN_2O$ activity maintenance profiles at $110^{\circ}C$. This discrepancy was associated with the nanoparticle sizes, i.e., the $Pt/SiO_2$ catalyst with the smaller particle size was much more active for the $N_2O$ reduction. When repeated measurements of the $N_2O$ reduction with the 1.16 nm Pt catalyst at $110^{\circ}C$ were allowed, the catalyst deactivation occurred, depending somewhat on regeneration excursions.

• E2M - 전기 전자와 첨단 소재
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• 제10권3호
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Bulletin of the Korean Chemical Society
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• 제31권9호
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• pp.2547-2552
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• 2010

CdS nano-particulate films were prepared at the air/water interface under Langmuir monolayers of arachidic acid (AA) via interfacial reaction between $Cd^{2+}$ ions in the subphase and $H_2S$ molecules in the gaseous phase. The films were made up of fine CdS nanoparticles with hexagonal Wurtzite crystal structure after reaction. It was revealed that the formation of CdS nano-particulate films depends largely on the experimental conditions. When the films were ripened at room temperature or an increased temperature ($60^{\circ}C$) for one day, numerous holes were appeared due to the dissolution of smaller nanoparticles and the growth of bigger nanoparticles with an improved crystallinity. When the films were ripened further, CdS rodlike nanoparticles with cubic zinc blende crystal structure appeared due to the re-nucleation and growth of CdS nanoparticles at the stacking faults and defect structures of the hexagonal CdS grains. These structures were characterized by transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and X-ray diffraction (XRD). These results declare that CdS semiconductor nanoparticles formed at the air/water interface change their morphologies and crystal structures during the ripening process due to dissolution and recrystallization of the particles.

• 한국수소및신에너지학회논문집
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• 제28권3호
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• pp.238-245
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• 2017

Mg-Ni nanoparticles were synthesized by a physical vapor condensation method (DC arc-discharge) in a mixture of argon and hydrogen atmosphere, using compressed mixture of micro powders as the raw materials. The crystal phases, morphology, and microstructures of nanoparticles were analyzed by means of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found that the intermetallic compounds of $Mg_2Ni$ and $Mg_2Ni$ formed with existence of phases of Mg, Ni, and MgO in Mg-Ni nanoparticles. After one cycle of hydrogen absorption/desorption process (activation treatment), Mg-Ni nanoparticles exhibited excellent hydrogen absorption properties. $Mg_2Ni$ phase became the main phase by aphase transformation during the hydrogen treatments. The phenomenon of refinement of grain size in the nanoparticle was also observed after the hydrogen absorption/desorption processes, which was attributed to the effect of volume expansion/shrinkage and subsequent break of nanoparticles. Maximum hydrogen absorption contents are 1.75, 2.21 and 2.77 wt.% at 523, 573 and 623 K, respectively.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.30-37
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• 2005

The microwave dielectric properties and their related structural characteristics in solid solutions of (1-$\chi$) Ba($Mg_{1/3}$Nb$_{2/3}$) $O_3$-$\chi$La(Mg$_{2/3}$Nb$_{1}$3) $O_3$(BLMN) have been investigated by measuring the dielectric constant($\varepsilon$r), Q value and temperature coefficient of resonant frequency($\tau$f) and by observing the crystal structure using high resolution transmission electron microscopy (HRTEM). Microwave dielectric properties showed characteristic features for specific composition. Dielectric constant($\varepsilon$$_{r}$) showed maximum value at the composition which corresponds to the phase boundary between 1 : 2 ordered and 1 : 1 ordered structure. The increase in $\varepsilon$$_{r}$ may be caused by the rattling of ions by incorporating smaller ions and the disordered structure. The variation of temperature coefficient of resonant frequency($\tau$$_{f}$) was investigated in terms of oxygen octahedra tilting.dra tilting.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.751-757
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• 2000

The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.