• Journal of environmental and Sanitary engineering
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• v.15 no.2
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• pp.102-111
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• 2000

As IR-sensor for detecting pollution material, the iron silicide has a fit band gap, high physicochemical stability at high temperature and good acid resistance. The growing film was formed with the Fe-Si bond and the organic compound because plasma resolved the injected precursors into various active species. In the Raman scattering spectrum, the Fe-Si vibration mode showed at 250 {TEX}$cm^{-1}${/TEX}. The FT-IR peak indicated that the various organic compounds were deposited on the films. The iron silicide was epitaxially grown to β-phase by the high energy of plasma. The lattice structure of films had [220]/[202] and [115]. The thickness of the films increased with the flow rate of silane. But rf-power increased with decreasing the thickness. The optical gap energy and the band gap were shown about 3.8 eV and 1.182∼1.194 eV. The band gap linearly increased and the formula was below: {TEX}$E_g^{dir}${/TEX}= 8.611×{TEX}$10^{-3}N_{D}${/TEX}＋1.1775

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.122.1-122.1
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• 2011

Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

• Parasites, Hosts and Diseases
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• v.49 no.4
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• pp.423-426
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• 2011

In the genus Cryptosporidium, there are more than 14 species with different sizes and habitats, as well as different hosts. Among these, C. parvum and C. hominis are known to be human pathogens. As C. parvum can survive exposure to harsh environmental conditions, including various disinfectants or high doses of radiation, it is considered to be an important environmental pathogen that may be a threat to human health. However, the resistance of other Cryptosporidium species to various environmental conditions is unknown. In this study, resistance against ${\gamma}$-irradiation was compared between C. parvum and C. muris using in vivo infection in mice. The capability of C. muris to infect mice could be eliminated with 1,000 Gy of ${\gamma}$-irradiation, while C. parvum remained infective in mice after up to 1,000 Gy of ${\gamma}$-irradiation, although the peak number of oocysts per gram of feces decreased to 16% that of non-irradiated oocysts. The difference in radioresistance between these 2 Cryptosporidium species should be investigated by further studies.

• Journal of the Korean institute of surface engineering
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• v.46 no.5
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• pp.192-196
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• 2013

Stainless steels (AISI 316L) are carburized by Inductively coupled plasma using $CH_4$ and Ar gas. The ${\gamma}_c$ phase(S-phase) is formed on the surface of stainless steel after carburizing process. The XRD peak of carburized samples is shifted to lower diffracting angle due to lattice expansion. Overall, the thickness of ${\gamma}_c$ phase showed a linear dependence with respect to increasing temperature due to the faster rate of diffusion of carbon. However, at temperatures above 500, the thickness data deviated from the linear trend. It is expected that the deviation was caused from atomic diffusion as well as other reactions that occurred at high temperatures. The interfacial contact resistance (ICR) and corrosion resistance are measured in a simulated proton exchange membrane fuel cell (PEMFC) environment. The ICR value of the carburized samples decreased from 130 $m{\Omega}cm^2$ (AISI 316L) to about 20 $m{\Omega}cm^2$. The sample carburized at 200 showed the best corrosion current density (6 ${\mu}Acm^{-2}$).

• Proceedings of the Korean Institute of Building Construction Conference
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• 2017.11a
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• pp.147-148
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• 2017

In this study, the tensile properties of mono and hybrid fiber reinforced cement-based composite according to fiber blending ratio under the high strain rate was evaluated. Experimental results, the HSF1.5PVA0.5 shown the highest tensile strength because the PVA fiber suppressed the micro cracks in the matrix around the hooked steel fiber and improved the pull-out resistance of hooked steel fiber. Thus, DIF of strain capacity and fracture toughness of HSF1.5PVA were greatly improved. Also, the fracture toughness was greatly improved because the tensile stress was slowly decreased after the peak stress by improvement of the pull-out resistance of hooked steel fiber at strain rate 101/s.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.943-944
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• 2007

In this paper, the development and the test of 13.2kV/630A high-Tc superconducting fault current limiting coil are described. The fault current limiting coil made of Coated Conductor (CC) was fabricated with bifilar winding method for non-inductive characteristics and tested in the distribution power system level in Dec. 2006. In order to determine the length of the superconducting coil, applied voltage per unit length(V/m) was studied analytically and it was verified through experiments. For the volume minimization, the coil was designed with concentrical arrangement method. The short-circuit test was performed with the prospective fault current of asymmetrical 10kA whose maximum fault current was $30kA_{peak}$. In the test, the voltage drop and the current of the coil were measured and the resistance of the coil was obtained. Also, the temperature rise of the coil was calculated with the relationship between the resistance and the temperature of CC. In this paper, the experimental results are analyzed and compared with the simulation.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.47-52
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• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.195-196
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• 2008

Doping depth, doping concentration, and resistivity of crystalline silicon solar cell are variables which take important portion in cell's efficiency. To get highly efficient solar cell, PC1D is used to calculate $I_{sc}$, $V_{oc}$, and $P_{max}$. Depth factor, peak doping, and base resistivity was used as variables. As a result, the optimized value of emitter peak doping is $1\times10^{19}cm^{-3}$, depth factor is $1{\mu}m$, and base $\rho$ is $ 0.1\Omega$-cm. Under the optimized condition, the solar cell gets efficiency 19.03(%).

• Journal of Fashion Business
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• v.11 no.4
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• pp.183-203
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• 2007

This study aims at providing useful fundamental information to re-establish the theories of modern fashion by examining the origination and genealogy of street style. The street styles focusing on caucasoid have a variety of genealogies such as western type, beat, teddy boy, hippie, skinhead, punk, neuron-mantic, indie kid, riot grrrl, grunge and techno cyber punk. In the same period, on the contrary, the streets styles focusing on negroid are zootie, hipster, modernist, rude boy, two-tone, rastafarian, funky, B-boy, fly girl, raggamuffine, bhangra, and acid jazz, which are seen as the culture of the large cities formed along Atlantic Ocean and Caribbean sea like England, America and Jamaica. These have root as the main fashion in western society. Ironically, most of the subculture concentrated on the whites were racists. Because of such a reason, the street styles have been formed as resistance culture that was unable to sympathize with their society and characteristics by distinguishing the whites and the colored people. Zootie or hipster that is one of the street fashion styles was formed in the 1940-50s, while the colored people who lived in the west Indies migrated to England or America. As a minimal modernist style called Ivy look in US, in that time, anti-culture formed by teenagers in whitey, teddy boy and mods fashion can be strictly different from the zootie and hipster. The colored people's street styles of the 1960s developed into aggressive and hard forms from the rude boy and two-tone while their resistance toward the whites was stronger. The rastafarian style researched the peak as the colored people's traditional ethnic characteristics or resistance intention for their freedom in the 1970s. In that time, The colored people's street styles of the 1960s developed into aggressive and hard forms from the rude boy and two-tone while their resistance toward the whites was stronger. The rastafarian style researched the peak as the colored people's traditional ethnic characteristics or resistance intention for their freedom in the 1970s. In that time, the street styles of the whites were mostly the skinhead or hippie. Most of them were racists toward the colored people. The punk type on shown on the whites focused on luxury and exaggerative costume. On the contrary, the funky style of the colored people focused on aggressive nihilism and form. With B-boy, fly girl, reggae, rap music, and break dancing in the 1980s, the subculture gradually told on the high fashion as well as the culture between the whites and the colored people. From such aspects, the colored people tried to maintain their unique traditional characteristics. However, their individual values surged by the coming young generation excluded the colored people's characteristic street styles. Focusing on gender, violence and private success among their major concerns, the raga muffin style that represents multi-races and multi-cultures was formed. The jazz style in the 1990s showed cold post-modernistic eclecticism different from that of the 1940s-50s. Simultaneously, the various classes appeared their street styles by emphasizing on each personality. Now that we are living in multi-cultural society, a human race or nationalism concept is getting obscurer. There is no obvious boundary line in the differences between human race and its fashion.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.