• 한국초전도학회:학술대회논문집
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• 2007.07a
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• pp.26-26
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• 2007

• Journal of Korean Society for Atmospheric Environment
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• v.18 no.E1
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• pp.1-12
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• 2002

One technique for determining dry acid deposition fluxes involves measurement of time - averaged ambient concentrations of dry acid deposition species using filter packs (FP) coupled with estimates of mean deposition velocities for the exposure period. A critical problem associated with filter pack data comparisons between various field sampling networks is the use of diverse sampling flow rates and duration protocols. Field experiments were conducted to evaluate the effects of varying sampling flow rates, from 1.5 to 10 standard liters per minute, on total nitrate and sulfate measurements of specific dry acid deposition species . Collocated FP samplers were used to determine sampling and analysis data reproducibility and representativeness . Ambient air samples were simultaneously collected using groups of filter packs operated at various flow rates over identical 7 day periods. The species measured were sulfur dioxide, particulate sulfate , nitric acid and particulate nitrate. Statistical results (ANOVA; alpha level 5%) showed that neither the low nor high sampling flow rates caused a significant difference in the measurements of total sulfate and adjusted total nitrate (ATN) . However, it was concluded that for high flow rate sampling measurements, total nitrate (TN) could be affected during extended sampling durations because of potential nitric acid overloading and breakthrough. Although the previous workers (Costello, 1990; Quillian, 1990) used much higher sampling flow rates (~ 17 sLpm) than employed here, it was assumed that for a high loading (> 50$\mu\textrm{g}$ HNO$_3$) of nitric acid on the Nylon filters, a significant fraction (~10%) of nitric acid could pass through the Nylon filters and be collected on the carbonate impregnated filters. It was concluded that even at the highest sampling flow rate employed (10 sLpm) at the Cary Forest site, nitric acid breakthrough was less than 10% of the total HNO$_3$ collected. However, for a heavily polluted urban airshed or with longer sampling times , higher filter loadings could result in substantial nitric acid breakthrough and HNO$_3$concentrations would be underestimated.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1560-1561
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• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10{\sim}50\;kHz$ and $10{\sim}60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.

• Progress in Superconductivity and Cryogenics
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• v.13 no.1
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• pp.1-5
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• 2011

[ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.277-277
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• 2012

New concept of coating process, which is called Electro Magnetic Levitation-Physical Vapour deposition (EML-PVD) was developed and investigated. Zinc coating was performed and succeeded for the first time on the steel strip (Cold-rolled Steel) in a continuos pilot line using the EML-PVD process which is specialized in the high deposition rate and high vapor yield. EML-PVD will be expected to be the next generation coating technology to be applied to the steel industry.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.3-32
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• 2016

High power impulse magnetron sputtering (HiPIMS) technique has been developed for more than 15 years. It is characterized by its ultra-high peak current and peak power density to obtain unique thin film properties, such as high hardness, good adhesion and tribological performance. However, its low deposition rate makes it hard to be applied in industries. In this work, the development of HiPIMS system and integration of radio frequency (RF) or mid-frequency (MF) power supplies were introduced. Effects of duty cycle and repetition frequency on the microstructure, mechanical property, optical and electrical properties of some binary, ternary and quarternary nitride coatings and oxide thin films were discussed. It can be observed that the deposition rate was effectively increased by the superimposed HiPIMS with RF or MF power. High hardness, good adhesion and sufficient wear resistance can be obtained through a proper adjustment of processing parameters of HiPIMS power system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.235-240
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• 2017

The effect of particle sizes on the aerosol deposition (AD) of Cu films is investigated in order to understand the deposition behaviors of metal powder during the AD process. The Cu coatings fabricated by using $2{\mu}m$ Cu powders had a dense microstructure, a high deposition rate ($1.6{\pm}0.2{\mu}m/min$), and low resistance ($9.42{\pm}0.4{\mu}{\Omega}{\cdot}cm$) compared to that from using Cu powder with a particle size greater than $5{\mu}m$. Also, from estimating the internal micro-strain of Cu films, the Cu coatings fabricated by using $2{\mu}m$ Cu particles exhibited a high micro-strain value of $3.307{\times}10^{-3}$. On the other hand, the strain of Cu coatings fabricated with $5{\mu}m$ particles was decreased to $2.76{\times}10^{-3}$. These results seem to show that the impacted Cu particles are compressed and flattened by shock waves, and that their bonding is associated with the high internal micro-strain caused by plastic deformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.28-30
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• 1992

Long incubation period of W nucleation on the TiN glue layer is a serious problem in blanket W process. In this study we investigated the dependence of W nucleation and growth rate on the preparation method of the TiN film, deposition temperature, chemistry, $SiH_4/WF_6$ ratio and sputter etching, ion implantation, and $SiH_4$ flushing pre-treatments. Incubation periods of W nucleation and deposition rates of W growth on three different TiNs are in the order of TiN>RTP-TiN> annealed TiN and TiN${\leq}$RTP-TiN${\leq}$ annealed TiN, respectively. $\beta$-W is not found on TiN substrate even for high $SiH_4/WF_6$ ratio. Sputter etching pre-treatment increases incubation period of W nucleation, while it decreases deposition rate. $SiH_4$ flushing pre-treatment decreases incubation period, but it slightly decreases deposition rate.