• 전력전자학회논문지
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• 제9권6호
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• pp.536-543
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• 2004

슬롯리스 PM BLDC 전동기는 고속도, 고출력의 특징을 가지고 있어서 산업 및 공장자동화 기기분야에서 폭넓게 사용되고 있다. PM BLDC 전동기를 구동하려면 회전자 위치를 검출하는 센서가 필수적으로 요구된다. 홀 센서는 회전자의 위치를 판별하기 위한 것으로서 3상 PM BLDC 전동기의 경우 3개의 센서를 이용하는 것이 일반적인 방법으로 사용되어지고 있다. 그러나 본 논문에서는 기존의 회전자 위치 검출 시 1개의 홀 센서를 사용하여 기존의 방법과 동일한 성능을 가질 수 있음을 증명하였다. 그 결과 기존의 방법과 동일한 성능을 갖으며 저가격, 보호회로의 역할, 회로의 부피 감소의 효과를 얻을 수 있었으며 이를 시뮬레이션과 실험으로 증명하였다.

• 한국산학기술학회논문지
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• 제18권3호
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• pp.681-686
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• 2017

태양광 모듈에서 태양전지를 연결해주는 인터커넥터로 리본 솔더로 SnPbAg가 사용되고, 옥외 태양광 발전에 장기간 노출시 리본의 부식으로 인한 열화가 흔히 관찰된다. 이러한 부식현상으로 인하여 리본과 태양전지의 접합이 약해져 접촉저항이 증가하고, 또한 리본 자체의 직렬 저항이 증가하게 되어 태양전지의 전압 전류 곡선에서 충진률 손실로 출력이 저하된다. 본 논문에서는 리본의 부식을 완화시킬 수 있는 방법으로 희생양극법을 이용하여 순수 알루미늄 및 아연, 알루미늄, 아연 그리고 마그네슘의 합금을 이용한 5가지 희생양극 소재의 부식에 의한 열화 저감을 연구하였다. 전기화학적 방법으로 희생양극 소재의 개방회로 전위와 폐쇄회로 전위를 측정하였고, 포텐시오다이나믹 분극 곡선을 측정하고, 영저항전류계를 이용하여 리본과 소재간의 갈바닉 전류를 측정하였다. 또한, 아세트산과, NaCl에 리본과 희생양극 소재의 부착 전후의 침지시험과 4셀 미니모듈로 제작한 후 1500시간 고온고습 시험 전후 출력을 평가하였다. 그 결과 Al-3Mg와 Al-3Zn-1Mg의 희생양극 소재가 부식속도가 느리고, 출력저하를 저감시킬 뿐만 아니라 장기 안정성에도 효과적인 것으로 평가된다.

• 한국재료학회지
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• 제15권2호
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• pp.134-138
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• 2005

This study was performed to investigate the surface properties of electrochemically oxidized pure niobium by anodic oxide and hydrothermal treatment technique. Niobium specimens of $10mm\times10mm\times1.0mm$ in dimension were polished sequentially from $\#600,\;\#800,\;\#1000$ emery paper. The surface of pure niobium sperimens was anodized in an electrolytic solution that was dissolved calcium and phosphate in water. The electrolytic voltage was set in the range of 250 V and the current density was $10mA/cm^2$. The specimen was hydrothermal treated in high-pressure steam at $300^{\circ}C$ for 2 hours using an autoclave. And all specimens were immersed in the in the Hanks' solution nth pH 7.4 at $37^{\circ}C$ for 30 days. The surface of specimen was characterized by surface roughness, scanning electron microscope(SEM), energy dispersion X-ray analysis(EDX), X-ray photoemission spectroscopy(XPS) test. The value of surface roughness was the highest in the anodized sample and $0.41{\pm}0.04\;{\mu}m$. The results of the SEM observation show that oxide layers of the multi porosity in the anodized sample were piled up on another, and hydroxyapatite crystal was precipitate from the surface of the hydrothermal treated sample. In the XPS analysis, O, Nb, C peak and small amounts of N peak were found in the polished specimens while Ca and P peak in addition to O, Nb, C and peak were observed in the hydrothermal treated sample.

• 전기전자학회논문지
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• 제12권2호
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• pp.110-117
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• 2008

본 연구는 전력용 스위칭 소자로 널리 활용되고 있는 IGBT(Insulated Gate Bipolar Transistor)소자로서 NPT(Non Punch Through) IGBT 구조에 기반 한 새로운 구조의 IGBT를 제안하였다. 제안된 구조는 기존 IGBT 구조의 P-베이스 영역 우측 부분에 N+를 도입함으로 N-드리프트 영역의 정공분포를 N+영역으로 밀집시켜 턴-오프 시 정공의 흐름을 개선, 기존 구조보다 더 빠른 턴-오프 시간과 더 낮은 순방향 전압강하를 갖는 구조이다. 또한 P+를 게이트 우측 하단에 형성함으로써 순방향 전압 강하 특성을 개선시키기 위해 도입한 캐리어 축적 층인 N+에 의해 발생하는 낮은 래치-업 특성과 낮은 항복 전압 특성을 개선시킨 구조이다. 시뮬레이션 결과 제한된 구조의 턴-오프와 순방향 전압강하는 기존 구조대비 각각 0.3us, 0.5V 향상된 특성을 보였다.

• 한국수소및신에너지학회논문집
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• 제8권3호
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• pp.137-141
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• 1997

The effects of Ag addition to Zr-based hydrogen storage alloys ($Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$, $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.3}Cr_{0.1}$ and $Zr_{0.6}Ti_{0.4}V_{0.4}Ni_{1.2}Mn_{0.3}Fe_{0.1}$) on the electrode properties were examined. Ag-free and Ag-added Ze-based alloys were prepared by arc melting, crushed mechanically, and subjected to the electrochemical measurement. In $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$ alloy, 0.08 wt% Ag addition to the alloy improved the activation rate. Also Ag addition improved both activation property and discharge capacity in $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.3}Cr_{0.1}$. For these Ag-added alloys, discharge capacities with the change of charge-discharge current density(10mA, 15mA and 30mA) are almost constant. Showing very high rate capability, discharge capacity of $Zr_{0.6}Ti_{0.4}V_{0.4}Ni_{1.2}Mn_{0.3}Fe_{0.1}$ alloy increased by Ag addition to the alloy. When the amount of Ag addition in $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$ alloy increased too much, the electrode properties became worse. Unveiling mechanism of effect of Ag addition is now progressing in our laboratory.

• 한국수소및신에너지학회논문집
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• 제26권2호
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• pp.105-113
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• 2015

In order to accelerate hydrogen society in current big renewable energy trend, it is very important that hydrogen can be transported and stored as a fuel in efficient and economical fashion. In this perspective, liquid hydrogen can be considered as one of the most prospective storage methods that can bring early arrival of the hydrogen society by its high gravimetric energy density. In this study, a small-scale hydrogen liquefier has been designed and developed to demonstrate direct hydrogen liquefaction technology. Gifford-McMahon (GM) cryocooler was employed to cool warm hydrogen gas to normal boiling point of hydrogen at 20K. Various cryogenic insulation technologies such as double walled vacuum vessels and multi-layer insulation were used to minimize heat leak from ambient. A liquid nitrogen assisted precooler, two ortho-para hydrogen catalytic converters, and highly efficient heat pipe were adapted to achieve the target liquefaction rate of 1L/hr. The liquefier has successfully demonstrated more than 1L/hr of hydrogen liquefaction. The system also has demonstrated its versatile usage as a very efficient 150L liquid hydrogen storage tank.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.636-639
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• 2004

This paper presents the fabrication and performance evaluation of zinc oxide varistors for the arresters used for station system. ZnO varistors were fabricated with typical ceramic production methods and the structural and electrical characteristics were investigated. All varistors exhibited high density, which were in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed in the two and four shots, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34% and 0.05%, respectively, which were in the acceptance range of 5%. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the new future.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.