• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.536-543
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• 2004

Slotless Permanent Magnet Brushless DC Motor(PM BLDC) with the characteristics of high speed and power density has been more widely used In Industrial and factory machine. Generally, PM BLDC meter is necessary that the three Hall-lCs evenly be distributed around the stator circumference in case of the 3 phase motor. The Hall-ICs are set up in PM BLDC Motor to detect the main flux from the rotor. therefore the output signal from Hall-ICs is used to drive a power transistor to control the stator winding current. However, instead of using three Hall-ICs, if it used only one Hall-IC, we can estimate information of the others phase in sequence through a rotor This paper identified the characteristics and performance by using one Hall-IC with the 3-phase, 2-pole, 6-slot PM BLDC motor.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.681-686
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• 2017

Degradation is commonly observed in field-aged PV modules due to corrosion of the photovoltaic ribbon. The reduced performance is caused by a loss of fill factor due to the high series resistance in the PV ribbon. This study aimed to mitigate the degradation by corrosion using five sacrificial anodes - Al, Zn and their alloys - to identify the most effective material to mitigate the corrosion of the PV ribbon. The corrosion behavior of the five sacrificial anode materials were examined by open circuit potential measurements, potentiodynamic polarization tests, and galvanic current density and potential measurements using a zero resistance ammeter. Immersion tests for 120 hours were also conducted using materials and damp heat test tests were performed for 1500 hours using 4 cell mini modules. The Al-3Mg and Al-3Zn-1Mg sacrificial anodes had a low corrosion rate and reduced drop in power, making then suitable for long-term use.

• Korean Journal of Materials Research
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• v.15 no.2
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• pp.134-138
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• 2005

This study was performed to investigate the surface properties of electrochemically oxidized pure niobium by anodic oxide and hydrothermal treatment technique. Niobium specimens of $10mm\times10mm\times1.0mm$ in dimension were polished sequentially from $\#600,\;\#800,\;\#1000$ emery paper. The surface of pure niobium sperimens was anodized in an electrolytic solution that was dissolved calcium and phosphate in water. The electrolytic voltage was set in the range of 250 V and the current density was $10mA/cm^2$. The specimen was hydrothermal treated in high-pressure steam at $300^{\circ}C$ for 2 hours using an autoclave. And all specimens were immersed in the in the Hanks' solution nth pH 7.4 at $37^{\circ}C$ for 30 days. The surface of specimen was characterized by surface roughness, scanning electron microscope(SEM), energy dispersion X-ray analysis(EDX), X-ray photoemission spectroscopy(XPS) test. The value of surface roughness was the highest in the anodized sample and $0.41{\pm}0.04\;{\mu}m$. The results of the SEM observation show that oxide layers of the multi porosity in the anodized sample were piled up on another, and hydroxyapatite crystal was precipitate from the surface of the hydrothermal treated sample. In the XPS analysis, O, Nb, C peak and small amounts of N peak were found in the polished specimens while Ca and P peak in addition to O, Nb, C and peak were observed in the hydrothermal treated sample.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Transactions of the Korean hydrogen and new energy society
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• v.8 no.3
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• pp.137-141
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• 1997

The effects of Ag addition to Zr-based hydrogen storage alloys ($Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$, $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.3}Cr_{0.1}$ and $Zr_{0.6}Ti_{0.4}V_{0.4}Ni_{1.2}Mn_{0.3}Fe_{0.1}$) on the electrode properties were examined. Ag-free and Ag-added Ze-based alloys were prepared by arc melting, crushed mechanically, and subjected to the electrochemical measurement. In $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$ alloy, 0.08 wt% Ag addition to the alloy improved the activation rate. Also Ag addition improved both activation property and discharge capacity in $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.3}Cr_{0.1}$. For these Ag-added alloys, discharge capacities with the change of charge-discharge current density(10mA, 15mA and 30mA) are almost constant. Showing very high rate capability, discharge capacity of $Zr_{0.6}Ti_{0.4}V_{0.4}Ni_{1.2}Mn_{0.3}Fe_{0.1}$ alloy increased by Ag addition to the alloy. When the amount of Ag addition in $Zr_{0.7}Ti_{0.3}V_{0.4}Ni_{1.2}Mn_{0.4}$ alloy increased too much, the electrode properties became worse. Unveiling mechanism of effect of Ag addition is now progressing in our laboratory.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.2
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• pp.105-113
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• 2015

In order to accelerate hydrogen society in current big renewable energy trend, it is very important that hydrogen can be transported and stored as a fuel in efficient and economical fashion. In this perspective, liquid hydrogen can be considered as one of the most prospective storage methods that can bring early arrival of the hydrogen society by its high gravimetric energy density. In this study, a small-scale hydrogen liquefier has been designed and developed to demonstrate direct hydrogen liquefaction technology. Gifford-McMahon (GM) cryocooler was employed to cool warm hydrogen gas to normal boiling point of hydrogen at 20K. Various cryogenic insulation technologies such as double walled vacuum vessels and multi-layer insulation were used to minimize heat leak from ambient. A liquid nitrogen assisted precooler, two ortho-para hydrogen catalytic converters, and highly efficient heat pipe were adapted to achieve the target liquefaction rate of 1L/hr. The liquefier has successfully demonstrated more than 1L/hr of hydrogen liquefaction. The system also has demonstrated its versatile usage as a very efficient 150L liquid hydrogen storage tank.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.636-639
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• 2004

This paper presents the fabrication and performance evaluation of zinc oxide varistors for the arresters used for station system. ZnO varistors were fabricated with typical ceramic production methods and the structural and electrical characteristics were investigated. All varistors exhibited high density, which were in the range of $5.41{\sim}5.49g/cm^3$. In the electrical properties the reference voltage increased in the range of $4.410{\sim}5.250kV$ with increasing their thickness and the residual voltage exhibited the same trends as the reference voltage. In the long duration current impulse withstand test, E-2 and F-1 samples failed in the two and four shots, respectively, but E-1 and F-2 samples survived 18 shots during the test. Before and after this test, the variation ratio of residual voltage of E-1 and F-2 samples were -0.34% and 0.05%, respectively, which were in the acceptance range of 5%. According to the results of tests, it is thought that if the fabrication process such as insulating coating, sintering condition, and soldering method is improved, these ZnO varistors would be possible to apply to the station class arresters in the new future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.787-790
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• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.