• 한국세라믹학회지
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• 제30권3호
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• pp.206-214
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• 1993

Coherent precipitation of Zn3P2 during Zn diffusion in a GaInAsP/InP heterostructure was studied using high-resolution transmission electron microscopy. Zn-diffusion-induced intermixing of Ga and In across the GaInAsP/InP heterointerface provided a Ga-mixed InP region which was nearly lattice-matched with Zn3P2 crystal and thus allowed thecoherent precipitation of Zn3P2. The Zn3P2 precipitates were preferentially nucleated at stacking faults which were formed to relax interfacial strain built up by the intermixing. The precipitates were grown to planar epitaxial layer along (100) plane in the lattice-matched region. The TEM images and diffraction pettern revealed that the tetragonal Zn3P2 crystals were coherently matched to the fcc structured GaInP matrix by the {{{{ SQRT {2} $\times$ SQRT {2} $\times$2 }} arrangement. The precipitation reaction of Zn3P2 was explained by an atomic migration model based on the kick-out mechanism.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.439-442
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• 2001

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. CU/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The ratio of resistance vs. temperature has shown over a 2 k$\Omega$/degree. The slop of temperature and resistance shows linear.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.727-730
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• 2002

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

• 전기전자학회논문지
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• 제17권4호
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• pp.531-536
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• 2013

The impact of UV irradiation process on the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor was investigated. Due to the high intensity UV irradiation before the gate dielectric deposition, the conductivity of AlGaN/GaN structure and the drain saturation current of the transistor increased by about 10 %. However, the pinch off characteristics of transistor was severely deformed by the process. By comparing the electrical characteristics of the transistors, it was proposed that the high intensity UV irradiation formed a sub-channel under the two dimensional electron gas of AlGaN/GaN structure even without additional impurity injection.

• 대한전자공학회논문지
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• 제22권4호
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• pp.72-75
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• 1985

Double-heterostructure 구조의 1.3μm GalnAsP/lnP 웨이퍼를 LPE 기술로 성장시키고, 전면전극(broad contact)레이저 다이오드를 제작, 실온에서 펄스 발진시켜 전기적 및 광학적 특성을 조사하였다. 발진 개시전류는 2Amp. 이하, 발진개시전류밀도 3∼6 KAmp./㎠였으며, 파장 1.315μm에서 발진하는 것을 확인하였다.

• 한국레이저가공학회지
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• 제7권3호
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• pp.47-50
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• 2004

In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.41-41
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• 2007

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권1호
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• pp.39-43
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• 2005

We proposed a structure for a 1.55 ㎛ strained separate confinement heterostructure (SCH) multi- quantum well (MQW) superluminescent diode (SLD), having a tapered active region. SLD was fabricated through a two-step procedure: the first step being metal organic chemical vapor deposition (MOCVD) and the second-step being liquid phase epitaxy (LPE). We used a 15 laterally tilted stripe and window region to suppress the lasing action of the SLD. The performance of the SLD showed output power of 11 mW with no lasing under 200 mA pulse driving. The full-width at half-maximum was 42 nm at 200 mA, 25℃.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권5호
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• pp.214-216
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the $Al_{0.20}Ga_{0.80}As$/GaAs heterostructures. In the PR spectrum, the 'C' peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, binding energy is relatively weak with As evaporation being done to increase Ga. Also obtained is the electric field value according to annealing temperature ($300{\sim}800^{\circ}C$).

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.107-112
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• 2011

This paper is for improving the RF frequency performance of a fabricated 100nm ${\Gamma}$-gate MHEMT, scaling down vertically for the epitaxy-structure layers of the device. Hydrodynamic simulation parameters are calibrated for the fabricated MHEMT with the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}$As heterostructure grown on the GaAs substrate. With these calibrated parameters, simulations for the vertically-scaled epitaxial layers of the device are performed and analyzed for DC/RF characteristics, including the quantization effect due to the thickness reduction of InGaAs channel layer. A newly designed epitaxy-structure device shows higher extrinsic transconductance, $g_m$ of 1.556 S/mm, and higher frequency performance, $f_T$ of 222.5 GHz and $f_{max}$ of 849.6 GHz.