• Journal of the Korea Safety Management & Science
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• v.4 no.2
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.111-122
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• 2021

Silicon heterojunction technology (HJT) solar cells have received considerable attention due to advantages that include high efficiency over 26%, good performance in the real world environment, and easy application to bifacial power generation using symmetric device structure. Furthermore, ultra-highly efficient perovskite/c-Si tandem devices using the HJT bottom cells have been reported. In this paper, we discuss the unique feature of the HJT solar cells, the fabrication processes and the current status of technology development. We also investigate practical challenges and key technologies of the HJT solar cell manufacturers for reducing fabrication cost and increasing productivity.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.431-431
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• 2008

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.432-432
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• 2008

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.560-560
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• 2006

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.324-324
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.2-59.2
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• 2012

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting $C_{60}$ derivatives are blended. We found there is significant charge recombination at the interface between the BHJ active layer and electrode. The charge recombination at the interface was effectively reduced by inserting wide band gap inorganic interfacial layer, which resulted in efficiency and stability enhancement of BHJ polymer solar cell.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2148-2154
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• 2013

Three push-pull organic semiconductors, TPA-$Th_3$-MMN (1), TPA-ThTT-MMN (2), and TPA-ThDTT-MMN (3), comprising a triphenylamine donor and a methylene malononitrile acceptor linked by various ${\pi}$-conjugated thiophene units were synthesized, and the effects of the ${\pi}$-conjugated bridging unit on the photovoltaic characteristics of solution-processed small-molecule organic solar cells based on these semiconductors were investigated. Planar bridging units with extended ${\pi}$-conjugation effectively facilitated intermolecular ${\pi}-{\pi}$ packing interactions in the solid state, resulting in enhanced $J_{sc}$ values of the SMOSCs fabricated with bulk heterojunction films.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.128.1-128.1
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• 2011

In amorphous silicon and crystalline silicon(a-Si:H/c-Si) heterojuction solar cells, intrinsic hydrogenated amorphous silicon(a-Si:H) films play an important role to passivate the crystalline silicon wafer surfaces. We have studied the correlation between the surface passivation quality and nature of the Si-H bonding at the a-Si:H/c-Si interface. The samples were obtained by VHF-CVD under different deposition conditions. The passivation quality and analysis of all structures studied was performed by means of quasi steady state photoconductance(QSSPC) methods and fourier transform infrared spectrometer(FTIR) measurements respectively.