• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.343-347
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• 2007

Fe thin films exhibited (100) preferential orientation when they were deposited at low deposition rate of $0.1{\AA}/s$ on glass substrates by using facing target sputtering system. The (100) oriented Fe layer induces (100) orientation of Pt layer deposited on it owing to hetero-epitaxial growth. After annealing at $600^{\circ}C$ in $H_2$ atmosphere, FePt films exhibited f.c.t. (001) texture in the whole film caused by inter-diffusion between atoms. We have also confirmed that the homogeneously inter-diffused compositional modulation in the film after the annealing process. Furthermore, annealing process in $Ar+H_2$ atmosphere at $400^{\circ}C$ during Pt deposition was effective for attaining Pt (100) texture. The annealing process during Pt deposition also induced in low annealing temperature and decreased annealing time for attaining the FePt f.c.t. (001) structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.433-437
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• 2002

Impact-collision ion scattering spectroscopy was applied to study the geometrical structure of epitaxially grown TiO layers on the MgO(100) surface. Hetero-epitaxial TiO layer was formed by thermal evaporation of titanium onto the MgO(100) surface followed by the exposure to oxygen at $400{\circ}$. The well-ordered TiO structure was confirmed by the impact-collision ion scattering spectroscopy and reflection high energy electron diffraction patterns. It is revealed that the Ti and O atoms are located on the on-top site of the MgO(100) surface and the TiO overlayers are composed of little three dimensional islands.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.512-513
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• 2005

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Korean Journal of Crystallography
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• v.13 no.2
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• pp.57-62
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• 2002

Time-of-flight impact-collision ion scattering spectroscopy (TOF-ICISS) was applied to study the geometrical structure of epitaxially grown TiO layers on a MgO(001) surface. The hetero-epitaxial TiO layer was deposited by thermal evaporation of titanium onto the MgO(001) surface and subsequent exposure to oxygen at 400℃. The well-ordered TiO structure was confirmed with the 1×1 RHEED pattern. TOF-ICISS results revealed that the TiO layer was formed at the on-top sites of the MgO(001) substrate and that the lateral lattice constant of TiO layer was the same as that of the MgO substrate. The surface of the deposited epitaxial TiO layer was smooth without the three dimensional islands.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.124-127
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• 2005

It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene$(C_60)$ as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was $2.65\%$ at illumination intensity $100\;mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.427-427
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• 2016

Organic-inorganic hybrid perovskite have attracted significant attention as a new revolutionary light absorber for photovoltaic device due to its remarkable characteristics such as long charge diffusion lengths (100-1000nm), low recombination rate, and high extinction coefficient. Recently, power conversion efficiency of perovskite solar cell is above 20% that is approached to crystalline silicon solar cells. Planar heterojunction perovskite solar cells have simple device structure and can be fabricated low temperature process due to absence of mesoporous scaffold that should be annealed over 500 oC. However, in the planar structure, controlling perovskite film qualities such as crystallinity and coverage is important for high performances. Those controlling methods in one-step deposition have been reported such as adding additive, solvent-engineering, using anti-solvent, for pin-hole free perovskite layer to reduce shunting paths connecting between electron transport layer and hole transport layer. Here, we studied the effect of alkali metal halide to control the fabrication process of perovskite film. During the morphology determination step, alkali metal halides can affect film morphologies by intercalating with PbI2 layer and reducing $CH3NH3PbI3{\cdot}DMF$ intermediate phase resulting in needle shape morphology. As types of alkali metal ions, the diverse grain sizes of film were observed due to different crystallization rate depending on the size of alkali metal ions. The pin-hole free perovskite film was obtained with this method, and the resulting perovskite solar cells showed higher performance as > 10% of power conversion efficiency in large size perovskite solar cell as $5{\times}5cm$. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and inductively coupled plasma optical emission spectrometry (ICP-OES) are analyzed to prove the mechanism of perovskite film formation with alkali metal halides.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.69.2-69.2
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• 2010

Recently, bulk hetero-junction cells have been extensively studied by many researchers. Most of these cells were fabricated by spin coater. However, the spin coating process is not favorable to the large-scaled industry because it is not compatible with roll-to-roll process. One of the alternative methods is Doctor blading. In this study, we fabricated large OPV cells having total area of $100cm^2$. The buffer layer was Poly-(3,4-ethylenedioxythiophene) : poly-(styrenesulfonate) aqueous dispersion (PEDOT:PSS) and the active material is poly (3-hexythiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) blend in the solvent of Chlorobenzene. All of the organic layers were coated by dragging the blade with a speed of 5~20 mm/s on the stage with a temperature of $50^{\circ}C$. As-bladed PEDOT:PSS layer was baked at $120^{\circ}C$ for 10 minutes to eliminate the water. The cell structure is patterned ITO substrate/PEDOT:PSS/P3HT:PCBM/LiF/Al. The topmost electrode, LiF/Al, was deposited by thermal evaporation. After depositing electrode, and the cell was annealed at $150^{\circ}C$ for 30 minutes. The measured ISC, VOC, fill factor, and PCE were 2.95 A, 5.86 V, 0.32, and 0.78%, respectively. PCE was quite low but the large active area could be obtained successfully.