• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.72-72
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• 1997

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.88-88
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• 1996

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.63-69
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• 1999

The characteristic parameters of high density plasma source (Helical Resonator) have been measured with Langmuir probe to get the plasma density electron temperature, ion current density, etc. Optical emission spectra of Si and SiCl have been analyzed in $Cl_2$$/poly-Si system to elucidate etching mechanism. In this system, the main reaction to remove silicon atoms on the surface is proceeding mostly through chemical reaction, not pure physical reaction. The emission intensity of SiCl (chemical etching product) increases much faster than Si (pure physical etching product) with increasing the concentration of impurities (P). This is due to the electron transfer from substrate to the surface via Si-Cl bond. As a result, Si-Cl bond becomes more ionic and mobile, therefore the Cl-containing etchant forms $SiCl_x$ with surface more easily. Consequently, for the removal of Si atom from poly silicon surface, the chemical etching is more favorable than physical etching with increasing P concentrations.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.24-29
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• 1999

The characteristic behaviors of CH3Br were examined first for the dry etching of polysilicon in a Cl2/CH3Br/O2 plasma. CH3Br is revealed one of the excellent additive gases to control anisotropy of etching profile and to give no undercutting for various typed of polysilicons. CH3Br acts as a passivation precursor on the side wall in etch cavity by forming polymer-like films such as CHxBry(x+y=1,2). The decrease of etch selectivity due to the reaction if the C-containing species from CH3Br with the surface O atoms of SiO2 was overcome by the addition of O2 into plasma, resulting that the selectivity increased by 2~3 times. According to the results of optical emission signals, CH3Br should be dissociated into several fragments to give more hydrogen atoms than bromine atoms in our helical resonator system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Journal of Advanced Navigation Technology
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• v.20 no.3
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• pp.246-251
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• 2016

This paper has optimized WPT (wireless power transfer) antenna, and compared EM (electromagnetic) simulation result with measurement for the magnetic resonant type standard of A4WP (alliance for wireless power) using 6.78MHz frequency and 1m distance. Power transmission distance is affected by various factors such as system shape, antenna size, and resonator coil pitch etc, which were confirmed by the EM simulation. By simulation an optimized WPT antenna was designed for a fixed distance, and the transmission loss ${\mid}S_{21}{\mid}$ has been calculated with changing distance. Measurement was carried for the fabricated antenna, and the measured transmission loss is 1.5dB with 70% efficiency at maximum 1.3m distance compared to the simulated loss of 1.6dB with 69% efficiency

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.12
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• pp.2823-2830
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• 2014

The antenna miniaturization technique involves the increment of the electrical length of the resonator the variation of the physical appearance of the antenna. The most typical method of size reduction is designing helical antenna, meander antenna, and fractal antenna. Size reduction using fractal antenna is proposed in this paper. Fractal koch curve has been etched in microstrip patch antenna to downsize the antenna at ISM (Industrial Scientific and Medical) frequency band of 2.45 GHz koch curve microstrip patch antenna ha FR4 epoxy substrate with dielectric constant 4.7, loss tangent equal to 0.02 and dielectric high of 1.6 mm. The designed antenna is fabricated using etching process. The fabricated antenna has return loss of 2.45 GHz, VSWR of 1.1492, and impedance is matched to $46{\Omega}$.