• Progress in Superconductivity
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• v.14 no.1
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• pp.17-23
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• 2012

The heavy-fermion compound $CeRhIn_5$ is a prototypical antiferromagnet where Ce 4f moments align antiferromagnetically below 3.8 K. When doped with Hg, the antiferromagnetic transition $T_N$ initially decreases, becomes flat, and increases again with further increasing Hg concentration. Here we report pressure effects on the electrical resistivity of a 0.45 % Hg-doped $CeRhIn_5$, where $T_N$ is 3.4 K and the magnetic structure is same as that of the undoped compound with Q=(1/2, 1/2, 0.298). With increasing pressure, $T_N$ is suppressed and a superconducting state emerges. The temperature dependence of the electrical resistivity near an optimal pressure shows a power-law behavior that deviates from a $T^2$ dependence, indicating presence of abundant quantum fluctuations near the optimal pressure.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.36-36
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• 2006

• Progress in Superconductivity and Cryogenics
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• v.23 no.3
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• pp.41-44
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• 2021

We developed an optimization process of the pulsed laser deposition method to grow epitaxial CeCoIn₅ thin films on MgF₂ substrates. The effects of different deposition parameters on film growth were extensively studied by analyzing the measured X-ray diffraction patterns. All the deposited films contained small amounts of CeIn₃ impurity phase and misoriented CeCoIn₅, for which the c-axis of the unit cell is perpendicular to the normal vector of the substrate surface. The deposition temperature, target composition, laser energy density, and repetition rate were found effective in the formation of (00l)-oriented CeCoIn₅ as well as the undesired phases such as CeIn₃, misoriented CeCoIn₅ along the (112) and (h00). Our results provide a set of deposition parameters that produce high-quality epitaxial CeCoIn₅ thin films with sufficiently low amounts of impurity phases and can serve as a reference for future studies to optimize the deposition process further.