• Journal of the Korean Society of Radiology
• /
• v.6 no.3
• /
• pp.207-215
• /
• 2012

As one of photo dynamic therapies, the existing LED photo irradiation method with 635 nm continuous wave has most frequently been used for acne treatment, it suffered from a low energy efficiency and generation of a large amount of heat in tissues requiring improvement measures. In this thesis, a LED photo irradiation system for acne treatment has been designed using PWM(Pulse Width Modulation) mode to enhance the energy efficiency and prevent thermal destruction in tissues. System configuration consisting largely of timer module, PWM module, and photo transfer device has been designed with the use of 1 W LED at a wavelength of 660 nm for the photo transfer device to increase skin penetration depth for treatment of acne. Frequency and wave form generated by using PWM control was verified along with confirmation of output energy of 660 nm LED and surface temperatures of tissues, followed by evaluation of stable energy outputs and stability of tissues. The results indicated that whereas power loss was high and thermal destruction in tissues was exhibited when C.W mode was used to obtain the optical energy of 1 W LED at a wavelength of 660 nm for acne treatment, realization of PWM mode allowed lowering of power consumption for LED through pulse width modulation, and no occurrence of thermal destruction in tissues, suggesting that PWM mode is safer and more effective for treatment of acne than C.W mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.120-121
• /
• 2009

Single crystalline $ZnIn_2Se_4$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating, $ZnIn_2Se_4$ source at $630^{\circ}C$. After the as-grown $ZnIn_2Se_4$ single crystalline thin films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of $ZnIn_2Se_4$single crystalline thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $ZnIn_2Se_4$ single crystalline thin films to an optical p-type. Also, we confirmed that In in $ZnIn_2Se_4$/GaAs did not form the native defects because In in $ZnIn_2Se_4$ single crystalline thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.474-477
• /
• 2002

We performed a continuous heat treatment experiment for long Si$_2$Sr$_2$CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$O$_3$, SrCO$_3$, and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.386-391
• /
• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.10
• /
• pp.871-880
• /
• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Journal of Advanced Marine Engineering and Technology
• /
• v.33 no.7
• /
• pp.1026-1033
• /
• 2009

Fine ceramics have high strength, excellent wear resistance, chemical stability and high strength at high temperature and are receiving attention in various fields such as construction, engineering, aerospace and marine science. Finish machining process is required to obtain precise ceramics components because sintering process necessary for obtaining high strength and high quality ceramics reduces the dimensions of components and precision of shape. But high strength and brittleness of ceramics materials cause difficulty in processing. So a process for obtaining wanted dimensions is studying using high temperature which makes ceramics softened and thermal affected recently. Laser beam is a very useful optical device for these kinds of processes. Laser process such as laser cutting, laser machining, laser heat treatment and laser-assisted machining(LAM) is researching to manufacture practical ceramics components using intense laser source which can cause local softening and damage of workpiece. In this paper, microstructural and mechanical properties of silicon nitride heated are studied as a basic study for researching of ceramics process by laser beam. The surface variation of HIP and SSN-silicon nitride was analyzed with SEM and EDS. A processing at $1,300^{\circ}C$ or above causes N element to combine into $N_2$ gas and the gas busts from surface. These phenomena make bloat, craters and heat defects on the surface of silicon nitride. Also, oxygen content is largely increased to oxidize the surface and it causes changing of phases and reducing of hardness of surface.

• The Korea Journal of Herbology
• /
• v.34 no.1
• /
• pp.1-11
• /
• 2019

Objective : An allergy to peanuts is a major cause of fatal food-induced anaphylaxis, with food allergies becoming an increasingly important health research issue. Food allergy as clinical entity has been recongnized for many years, although there is yet no general concord as to the incidence of this symptom.1) Methods : This study was undertaken to verify the effect of seeds of Canavalia gladiata (Jacq.) DC. extract (CGE) on the inhibition of allergic reactions using a cholera toxin and peanut extract-immunized food allergy mouse model. We determine whether the changes in rectal temperature were related to energy consumption owing to heat production in the body. Mast cell distribution and degranulation in the dermis and epidermis were observed with an optical microscope. Subsequently, Ara h1 levels in serum and interleukin (IL)-4, IL-10, and $IFN-{\gamma}$ levels in cultured supernatants of splenocytes were measured. Results : CGE treatment significantly attenuated the secretion of the Ara h1 antibody in serum and splenocytes. Ara h 1 was undetected in the cholera toxin and peanut extract-immunized food allergy mouse model. Improvement in ear tissue inflammation symptoms was the CGE experimental group. In the control group and peanut extract control group, the expression of mast cells was higher, whereas that in the CGE experimental group was significantly lower. Conclusion : CGE causes suppression in a food allergy mouse model via the inhibition of Ara h1 secretion, and might be useful for developing functional health foods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.11
• /
• pp.923-932
• /
• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• The Journal of Korean Academy of Prosthodontics
• /
• v.22 no.1
• /
• pp.95-108
• /
• 1984

Even though the tarnishing and corrosion problems characteristic with dental silver-palladium alloy are not yet fully solved, it is recently widely used because of its low cost. However the effects of major alloying elements on the various properties of this system are not fully understood. The object of this research is to clarify the effects of In and Zn additives on the corrosion and tarnishing resistances and precipitation hardening behavior of this sytem, using electrodynamic polarization, immersion, and Vicker's microhardness test and X-ray diffraction and electron probe micro analysis methods. The obtained results were as follows: I. As indium content is increased, both the corrosion resistance in Cl-solution and microhardness are also increased while the tarnishing resistance is decreased. 2. As Zinc content is increased, the corrosion resistance is decreased, but tarnishing resistance is increased 3. At 70Ag-25Pd-2.5Zn-2.5In composition, the precipitation harding behavior was mot significant. The optimum aging temperature was $450^{\circ}C$ and the time was 2 hrs. The resulting specimen of this work carried 180VHN. 4. Under the heat treatment, the changes in the mechanical property are due to the changes in the shape and composition of dendrite matrix, namely, it is because of the precipitation hardening behavior which has been proved by electron probe micro analysis and optical microscopic finding.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.154-154
• /
• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.