• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.31-35
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• 2018

Tungsten disulfide($WS_2$) thin films were directly deposited by direct-current(DC) sputtering and annealed by rapid thermal processing(RTP) to materialize two-dimensional p-type transition metal dichalcogenide (TMDC) thin films on soda-lime glass substrates without any complicated exfoliation/transfer process. $WS_2$ thin films deposited at various DC sputtering powers from 80 W to 160W were annealed at different temperatures from $400^{\circ}C$ to $550^{\circ}C$ considering the melting temperature of soda-lime glass. The optical microscope results showed the stable surface morphologies of the $WS_2$ thin films without any defects. The X-ray photoelectron spectroscopy (XPS) results and the Hall measurement results showed stable binding energies of W and S and high carrier mobilities of $WS_2$ thin films.

• Design & Manufacturing
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• 제14권4호
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• pp.25-39
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• 2020

In this study, an edge device that monitors the injection molding process by measuring the mold vibration(acceleration) signal and the mold surface temperature was developed and evaluated its performance. During injection molding, signals of the injection start, V/P switchover, and packing end sections were obtained through the measurement of the mold vibration and the injection time and packing time were calculated by using the difference between the times of the sections. Then, the mold closed and mold open signals were obtained using a magnetic hall sensor, and cycle time was calculated by using the time difference between the mold closed time each process. As a result of evaluating the performance by comparing the process data monitored by the edge device with the shot data recorded on the injection molding machine, the cycle time, injection time, and packing time showed very small error of 0.70±0.38%, 1.40±1.17%, and 0.69±0.82%, respectively, and the values close to the actual were monitored and the accuracy and reliability of the edge device were confirmed. In addition, it was confirmed that the mold surface temperature measured by the edge device was similar to the actual mold surface temperature.

• 건축역사연구
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• 제31권3호
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• pp.7-16
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• 2022

Fen(分°) is the proportional dimension unit of the standard timber section on Yingzaofashi(營造法式), and there is a phrase that not only structural members but the whole structural design of a building also use Fen as the dimension unit on the book. But in fact only the section dimensions of structural members are recorded by Fen, but the design dimensions are recorded by Chi(尺) on the book. Other historical records also described the building size by Chi. So there has been long-standing debate on the phase in Chinese architectural history society, including the recent confrontation on the analysis of survey figures of the east great hall of Foguangsi temple(佛光寺 東大殿). This paper analyzes all the records about the size of structural members and section planning on the book to make various calculation and evaluation. And it makes a survey of Cai(材) as the dimension and design unit between Chi and Fen through geometric analysis. Cai might be a rough unit of measurement in terms of structural and proportional scheming on Yingzaofashi, and the full size Cai(足材) had been a building scheming module before the Song dynasty.

• 센서학회지
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• 제31권6호
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• pp.371-375
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• 2022

Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO₂-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultraviolet-visible spectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 10² Ω/sq, and 0.3991 × 10^-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 10²¹ cm^-3 and 6.627 × 10^-2 cm²V^-1s^-1, respectively, at a substrate temperature of 400 ℃.

• Current Photovoltaic Research
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• 제10권1호
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Advances in nano research
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• 제16권2호
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• pp.155-164
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• 2024

The rapid evolution of intelligent sports equipment and gadgets has led to the transformation of smartphones into personalized coaching devices. This transformative role is central in today's technologically advanced landscape, addressing the needs of individuals with contemporary lifestyles. The development of intelligent sports gadgets is geared towards elevating overall quality of life by facilitating sports activities, workouts, and promoting health preservation. This categorization yields two primary types of devices: smart sports devices for exercise and smart health control devices, which encompass functionalities such as blood pressure monitoring and muscle volume measurement. Illustrative examples include smart headbands, smart socks, smart wristbands, and smart shoe soles. Significantly, the global market for smart sports devices has garnered substantial popularity among enthusiasts. Moreover, the integration of sensors within these devices has instigated a revolution in group and professional sports, facilitating the calculation of impact intensity and ball speed. The utilization of various types of smart sports equipment has proliferated, encompassing applications in both sports' performance and health monitoring across diverse demographics. This article conducts an assessment of the application of nanotechnology in the continuous modeling of the magnetic electromechanical sensor integrated within smart shoe soles, with a specific emphasis on its implementation in soccer training. The exploration delves into the nuanced intersection of nanotechnology and sports equipment, elucidating the intricate mechanisms that underlie the transformative impact of these advancements.

• 한국재료학회지
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• 제11권5호
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• pp.419-426
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• 2001

AgGaSe$_2$ 단결정 박막은 수평 전기로에서 합성한 $AgGaSe_2$ 다결정을 증발원으로 하여, hot wall epitaxy (HWE) 방법으로 증발원과 기판 (반절연성-GaAs(100)) 의 온도를 각각 $630^{\circ}C$, $420^{\circ}C$로 고정하여 박막 결정 성장을 하였다. 10K에서 측정한 광발광 excition 스펙트럼과 이중결정 X-선 요동곡선 (DCRC) 의 반치폭 (FWHM )을 분석하여 단결정 박막의 최적 성장 조건을 얻었다. Hall효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293k에서 각각 4.89$\times$$10^{ 16}$/㎤, 129$\textrm{cm}^2$/V.s였다. 광전류 봉우리의 10K에서 단파장대의 가전자대 갈라짐 (splitting)에 의해서 측정된 $\Delta$C$_{r}$ (crystal field splitting)은 0.1762eV, $$\Delta$S_{o}$ (spin orbit splitting)는 0.2494eV였다 10K의 광발광 측정으로부터 고풍질의 결정에서 볼 수 있는 free excitors과 매우 강한 세기의 중성 주개 bound excitors등의 피크가 관찰되었다. 이때 중성 주개 bound ekciton의 반치폭과 결합에너지는 각각 BmeV와 14.1meV였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 141meV였다.rule에 의해 구한 불순물의 활성화 에너지는 141meV였다.

• 인터넷정보학회논문지
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• 제25권4호
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• pp.65-72
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• 2024

전시 공간에서 작품의 의도를 충실하게 나타내기 위해서는 자연광처럼 높은 색상 재현 성능을 제공하는 조명이 필요하다. 이에 연색성의 향상을 위한 다수의 조명 기술이 소개되었으나 대부분 파스텔 계열의 8가지 색상을 고려하는 일반 연색지수(CRI Ra)만을 평가하였다. 자연광은 R9과 R12의 연색지수로 표현되는 빨간색과 파란색을 포함하여 모든 색상에 대해 우수한 연색 성능을 제공하지만 대부분 인공조명은 R9, R12 등의 연색 성능이 자연광에 비해 현저히 낮다는 문제가 있다. 최근 원색을 포함한 전시물의 색상을 사실적으로 표현할 수 있도록 자연광 수준의 연색성을 제공하는 조명 기술이 요구되지만 관련 연구는 매우 부족하였다. 이에 본 논문에서는 자연광의 특성에 기반하여 CRI Ra, R9, R12를 중심으로 높은 연색성을 실현하는 전시관 조명을 제안한다. 먼저 자연광과 인공조명의 실측 분광에 대한 분석을 통해 R9과 R12의 향상을 위한 보강 파장 대역을 도출한다. 이후 보강 파장 대역 내 피크 파장특성을 가진 가상의 SPD를 생성한 후 상용 LED 광원과의 조합 시뮬레이션을 통해 CRI Ra≥95와 R9, R12≥90을 충족하는 SPD의 조합조건을 도출한다. 이를 통해 R9과 R12 향상에 가장 큰 영향을 미친 405, 630nm 피크 파장 특성의 광원 2종을 특정한 후 W/C White LED 2종을 적용한 전시관 조명을 설계하고 조명의 제어지표 DB를 구축한다. 이후 제안 방법의 실험을 통해 조도(300-1,000 Lux), 색온도(3,000-5,000K) 조건에서 평균 CRI Ra는 96.5, R9과 R12는 96.2, 94.0로 자연광 수준 고연색성의 실현이 가능함을 보였다.

• 마이크로전자및패키징학회지
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• 제24권4호
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• pp.59-63
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• 2017

n-type GaN 반도체는 광전극으로서 우수한 성질을 가지고 있지만, 표면에서 일어나는 산소반응으로 인한 광부식으로 신뢰성이 저하되는 큰 단점이 있다. 이를 근본적으로 억제하기 위하여 표면에서 수소 발생 반응이 일어나는 p-type GaN를 광전극으로 사용함으로써 광부식을 피하고자 하는 연구가 진행되고 있다. 하지만 p-type GaN은 비저항이 높고 정공 이동도가 낮기 때문에 효율이 낮다는 단점을 가지고 있다. 본 연구에서는 이러한 문제를 p-type GaN의 activation 공정을 통해 개선하고자 한다. 전극으로 사용될 p-type GaN을 $N_2$ 분위기의 $500^{\circ}C$에서 1 분 동안 annealing을 하였다. Hall effect 측정을 통하여 전기적 특성을 확인하였으며, potentiostat (PARSTAT4000) 측정을 통하여 광전기화학적 (photoelectrochemical, PEC) 특성을 분석하였다. 그 결과 annealing 공정을 통하여 광전류밀도가 1.5배 이상 향상되었으며, 3시간 동안 안정적인 광전류 값을 확인하였다.