• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.13-15
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• 2005

The growth of $Bi_2Te_3$ thin films on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) is discussed in this paper. The results of surface morphology, electrical and thermoelectrical properties as a function of growth parameters are given. The surface morphologies of $Bi_2Te_3$ films were strong1y dependent on the deposition temperatures. Surface morphologies varied from step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's ratio of Te/Bi and deposition temperature. The high Seebeck coefficient (of $-160{\mu}VK^{-1}$) and good surface morphology of our result is promising for $Bi_2Te_3$ based thermoelectric thin film and two dimensional supperlattice device applications.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2003.11a
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• pp.1000-1005
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• 2003

The shock separation test simulates the environmental effects of the spacecraft separation from launch vehicle. The shock separation test for a structural model of KOMPSAT-Ⅱ(Korea Multi-Purpose SATellite Ⅱ) was performed in SITC(Satellite Integration ＆ Test Center) launch environmental test hall at KARI(Korea Aerospace Research Institute) to verify the shock test requirement of the spacecraft, to predict the induced acceleration responses on the primary structures and payloads by the explosion of pyre-lock and to perform mechanical fit check. The spacecraft with S/A was mated vertically to LV(Launch Vehicle) adapter simulator via a clamp band, then hoisted and suspended above a foam test bed by four isolation springs secured to the spacecraft hoist fittings to isolate the payload platform shock wave from the sling elements. For separation process, real pyre-devices were used and the time response signals from 60 accelerometers installed on the interested points was acquired and recorded. The SRS responses for each response channels were calculated and the achieved SRS's on the separation plane was reviewed and evaluated in comparison to the ICD(Interface Control Document) value.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.

• ETRI Journal
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• v.13 no.4
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• pp.70-79
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• 1991

$In_1-x$$GA_X$$As_y$$P_1-y$ has a very wide range of applications in optoelectronic devices especially for optical communications because $In_1-x$$GA_X$$As_y$$P_1-y$ has the bandgap of the lowest dispersion ($1.3\mum$) and the lowest loss ( $1.55\mum$) of the optical fiber by changing the composition. The quality of $In_1-x$$GA_X$$As_y$$P_1-y$ epitaxial layer is believed to have a significant effect on the performance of device. The OMVPE growth conditions for the latticematched $In_1x$$GA_X$$As_y$$P_1-y$/InP were investigated. Effects of growth conditions such as V/III ratio, growth temperature, and Ga source material on the electrical and optical properties were studied. The composition, electrical and optical properities of $In_1-x$$GA_X$$As_y$$P_1-y$ were characterized using double crystal X-ray diffractometer (DCD), photoluminescence (PL), XPS(ESCA) and Hall measurement.

• Journal of the Korean Magnetics Society
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• v.22 no.4
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• pp.136-141
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• 2012

In the this research, two simultaneous peaks of radial artery pulse wave and ECG pulse wave measured by using clip-type pulsimeter and ECG were investigated in order to analyze pulse wave velocity. The measured value of a pulse wave velocity is about 5~7 m/s, it is proved one new method to measure an exact value of pulse wave velocity more than the typical biomedical signal monitoring system. This result implies that data measured by the oriental medical diagnosis apparatus as pulsimeter is clinically used in future.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.235-238
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• 1996

An inverted double channel AIGaAs/lnGaAs/GaAs heterostructure grown by LP-MOCVD is demonstrated and discussed. Sheet carrier densities in excess of $4.5{\times}10^{12}cm^{-2}$ at 300K are obtained with a hall mobility of $5010cm^2/V{\cdot}s$. The proposed device with a $1.8{\times}200{\mu}m^2$ gate dimension reveals an extrinsic transconductance as high as 320 mS/mm and a saturation current density as high as 820 mA/mm at 300K. This is the highest current density ever reported for GaAs MODFET's with the same gate length. Significantly improvements on gate voltage swing (up to 3.5 V) and on reverse breakdown voltage (-10V) are demonstrated due to inverted structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.6
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• pp.1-8
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• 2016

Current sensors are used widely in the fields of current control, monitoring, and measuring. They have become more popular with the increasing demand for smart grids in a power network, generation of renewable energy, electric cars, and hybrid cars. Although open loop Hall effect current sensors have merits, such as low cost, small size, and weight, they have low accuracy. This paper describes the design and fabrication of a 300A open loop current sensor that has high accuracy and temperature performance. The core of the current sensor was calculated numerically and the signal conditioning circuits were designed using circuit analysis software. The characteristics of the manufactured open loop current sensor of 300 A class was measured at currents up to 300 A. According to the test of the current sensor, the accuracy error and linearity error were 0.75% and 0.19%, respectively. When the temperature compensation was carried out with the relevant circuit, the temperature coefficients were less than $0.012%/^{\circ}C$ at temperatures between $-25^{\circ}C$ and $85^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8306-8313
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• 2015

Open-type current sensors have been commonly used for DC motor controller, AC variable controller and Uninterruptible Power Supply. Recently they have begun to be used more widely, as the growth of renewable energy and smart-grid in power system. Considering most of the open-type current sensors are imported, developing the core technology needed to produce open-type current sensors is required. This paper describes the development and test results of open-type current sensors. Design of C type magnetic core, selection and test of a Hall sensor, design of current source circuit and signal conditioning circuit are described. 100A class DIP(Dual In-line Package) type and SMD(Surface Mount Devide) type open-type current sensors was made and tested. Test results show that the developed open-type current sensor satisfies the accuracy requirement of 2% and linearity requirement of 2% at 100 A of DC and AC current of 60Hz. Temperature compensation was carried out by using a temperature compensation circuit with NTC(Negative Temperature Coefficient) thermistor and the effect of the temperature compensation are described.

• Journal of the Korean Geotechnical Society
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• v.19 no.4
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• pp.145-153
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• 2003

The resonant column testing determines the shear modulus and material damping factor dependent on the shear strain magnitude, based on the wave-propagation theory. The determination of the dynamic soil properties requires the theoretical formulation of the dynamic behavior of the resonant column testing system. One of the theoretical formulations is the use of the wave equation for the soil specimen in the resonant column testing device. Wood, Richart and Hall derived the wave equation by assuming the linear elastic soil, and didn't take the material damping into consideration. Hardin incorporated the viscoelastic damping of soil in the wave equation, but he had to assume the material damping factor for the determination of the shear modulus. For the better theoretical formulation of the resonant column testing, this study derived a new wave equation to include the viscosity of soil, and proposed an approach for the solution. Also, in this study, the equation of motion for the testing system, which is another approach of the theoretical formulation of the resonant column testing, was also derived. The equation of motion leads to the better understanding of the resonant column testing, which includes the dynamic magnification factor and the phase angle of the response. For the verification of the proposed equation of motion for the resonant column testing, the finite element analysis was performed for the resonant column testing. The comparison of the dynamic magnification factors and the phase angles far the system response were performed.