• Journal of Magnetics
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• v.19 no.2
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• pp.151-154
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• 2014

Recent years have seen an increasing range of planar Hall resistive (PHR) sensor applications in the field of magnetic sensing. This study describes a new application of the PHR sensor to monitor a current. Initially, thermal drift experiments of the PHR sensor are performed, to determine the accuracy of the PHR signal output. The results of the thermal drift experiments show that there is no considerable drift in the signals attained from 0.1, 0.5, 1 and 2 mA current. Consequently, the PHR sensor provides adequate accuracy of the signal output, to perform the current monitoring experiments. The performances of the PHR sensor with bilayer and trilayer structures are then tested. The minimum detectable currents of the PHR sensor using bilayer and trilayer structures are $0.51{\mu}A$ and 54 nA, respectively. Therefore, the PHR sensor having trilayer structure is the better choice to detect ultra low current of few tens nanoampere.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.26-29
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• 2017

We studied the distribution of the current density and its magnetic-field dependence in GdBCO coated conductors with AC bias currents using low temperature scanning Hall probe microscopy. We selectively measured magnetic field profiles from AC signal obtained by Lock-in technique and calculated current distributions by inversion calculation. In order to confirm the AC measurement results, we applied DC current corresponding to RMS value of AC current and compared distribution of AC and DC transport current. We carried out the same measurements at various external DC magnetic fields, and investigated field dependence of AC current distribution. We notice that the AC current distribution unaffected by external magnetic fields and preserved their own path on the contrary to DC current.

• Steel and Composite Structures
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• v.42 no.6
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• pp.723-732
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• 2022

The present research is concerned to study the effect of fractional parameter and rotation on the propagation of Rayleigh waves in an orthotropic magneto-thermoelastic media with three-phase-lags in the context of fractional order theory of generalized thermoelasticity with combined effect of rotation and hall current. The secular equations of Rayleigh waves are derived by using the appropriate boundary conditions. The wave properties such as phase velocity, attenuation coefficient are computed numerically and the numerical simulated results are presented through graphs to show the effect on all the components. Some special cases are also discussed in the present investigation.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.1-4
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• 2007

The current profiles in a coated conductor with transport current were calculated using an iterative inversion method from the data of the magnetic flux density profiles measured. The applied current was increased from 0 to 60 A by 10A step and decreased down to -60A by 20A step. The magnetic flux profiles were measured at a distance of 400 mm above the surface of the coated conductor using a scanning hall probe method. The current profiles calculated were very different from the Bean model: current density profile is not a constant in the critical region. However the aspect of the change of the current and magnetic flux density profiles in the case of decreasing applied current are similar to the theoretical calculations in Brandt's paper.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.12
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• pp.1133-1140
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• 2011

Current design process for the Hall effect thruster has relied on expensive experimental method based on the limited historical data. In this study, a proper design space for the Hall effect thruster is chosen and associated design space exploration is conducted based on a recently proposed numerical method in order to improve current design process. According to the results of the design space exploration, performance envelope is determined for the given design space and the correlations between performance metrics are analyzed. Further analysis shows that main factors in performances for the Hall effect thruster are the anode mass flow rate and the discharge voltage.

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.310-319
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• 2016

Three types of gap sensors, a capacitive gap sensor, an eddy current gap sensor, and a Hall effect gap sensor are described and evaluated through experiments for the purpose of precise gap sensing for micrometer scale movement, and a novel type of differential hall effect gap sensor is proposed. Each gap sensor is analyzed in terms of resolution and environment dependency including temperature dependency. Furthermore, a transport system for AMOLED deposition is introduced as a typical application of gap sensors, which are recently receiving considerable attention. Based on the analyses, the proposed differential Hall effect gap sensor is found to be the most suitable gap sensor for precise gap sensing, especially for application to a transport system for AMOLED deposition. The sensor shows resolution of $0.63mV/{\mu}m$ for the overall range of the gap from 0 mm to 2.5 mm, temperature dependency of $3{\mu}m/^{\circ}C$ from $20^{\circ}C$ to $30^{\circ}C$, and a monotonic characteristic for the gap between the sensor and the target.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.2
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• pp.195-200
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• 2011

A low power Hall thruster is under development for orbit maintenance of a small Earth observing satellite. Both cylindrical and annular type thrusters were manufactured and tested to characterize the performance of cylindrical Hall thrusters. Results were described through comparative analyses. Cylindrical thrusters were manufactured in two different channel diameter dimensions, 28 mm and 50 mm. Thrust, ion velocity and ion current were measured in various operating conditions. The results show that cylindrical thrusters are more efficient in mass utilization and voltage utilization, but less efficient in current utilization than annular one.

• Journal of Sensor Science and Technology
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• v.7 no.4
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• pp.225-233
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• 1998

The principle, design, and application of a gear-tooth sensor for the rough environmental conditions such as high temperatures of up to $150^{\circ}C$ are studied. The rotation of a tooth wheel is detected by a couple of Hall elements manufactured on the SIMOX wafer by a methode of differential detection using bipolar silicon technology. The product sensitivity of the Hall element is about 510 V/AT over a wide temperature range of $-40^{\circ}C{\sim}150^{\circ}C$. The differential Hall sensor makes the maximum possible distance between sensor and tooth wheel wider than that when single Hall element is used over a wide temperature range, and the maximum detectable distance is 4.5mm at driving current of 4mA.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1431-1433
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• 1995

This paper describes the characteristics of Si Hall sensors fabricated on a SOI(Si-on-insulator} structure, in which the SOI structure was forrmed by SDB(Si-wafer direct bonding) technology. The Hall voltage and the sensitivity of implemented Si Hall devices show good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average $600V/A{\cdot}T$. In the temperature range of 25 to $300^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the product Sensitivity) are less than ${\pm}6.7{\times}10^{-3}/^{\circ}C$ and ${\pm}8.2{\times}10^{-4}/^{\circ}C$, respectively. From these results, Si Hall sensors using the SOI structure presented here are very suitable for high-temperature operation.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.