• Journal of Welding and Joining
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• v.20 no.5
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• pp.93-98
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• 2002

The effect of bonding misfit on single crystallization of transient liquid phase (TLP) bonded joints of single crystal superalloy CMSX-2 was investigated using MBF-80 insert metal. The bonding misfit was defined by (100) twist angle (rotating angle) at bonded interface. TLP bonding of specimens was carried out at 1523K for 1.8ks in vacuum. The post-bond heat treatment consisted of the solution and sequential two step aging treatment was conducted in the Ar atmosphere. The crystallographic orientation analysis across the TLP bonded joints was conducted three dimensionally using the electron back scattering pattern (EBSP) method. EBSP analyses f3r the bonded and post bonded heat treated specimens were conducted. All bonded joints had misorientation centering around the bonded interface for as-bonded and post-bond heat treated specimens with rotating angle. The average misorientation angle between both solid phases in bonded interlayer was almost identical to the rotating angle at bonded interface. HRTEM observation revealed that the atom arrangement of both solid phases in bonded interlayer was quite different across the bonded interface. It followed that grain boundary was formed in bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during TLP bonding and single crystallization could not be achieved in joints with rotating angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.77-80
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• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.301-313
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• 1996

The texture of vapor deposits(PVD and CVD) changes from the orientation that places the lowest energy lattice plane parallel to the substrate under the condition of low atom or ion concentration adjacent to the deposit, to the orientation that places the higher energy crystal planes parallel to the substrate as the atom or ion concentration adjacent to the deposit increases. However, in the early stage of deposition, the deposit-substrate interface energy and the surface energy constitute the most important energies of the system. Therefore, if the lattice match is established between the substrate and the deposit without generating much strain energy, the epitaxial growth takes place to reduce the interfacial energy. When the epitaxial growth does not take place, the surface energy is dominant in the early stage of deposition and the lowest energy crystal plane tends to be placed parallel to the substrate up to a critial thickness. The thickness depends on the deposition condition. If the deposition condition does not favor placing the lowest energy crystal plane parallel to the substrate, the initial texture will change to that compatible with the deposition condition as the film thickness increases, and the texture turnover thickness will be short. The microstructure and surface topography of deposits are related to their texture.

• The Journal of Asian Finance, Economics and Business
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• v.8 no.4
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• pp.897-907
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• 2021

The purpose of this study is to investigate the quality of entrepreneurship - motivation, entrepreneurial orientation, and risk behavior - in relation to the odds of micro-, small- and medium-sized enterprises' (MSMEs) financial performance in Indonesia. Additionally, this paper investigates how these qualities apply for the current challenges perceived by MSMEs' entrepreneurs in Indonesia due to Covid-19 crisis; specifically, this paper examines the odds of MSMEs' financial performance during the pandemic in respect to when these qualities are implemented by the entrepreneurs. The empirical data was obtained from an online survey by means of a structured questionnaire. MSMEs surveyed were randomly selected on a national scale. To test the hypotheses, a quantitative approach is employed, using multinomial regression. The main result shows that, under normal economic environment, the more intrinsically-motivated and continuity-driven entrepreneur is, the more likely the MSME will achieve financial growth compared to remaining stagnant. To our surprise, innovativeness leads to less likelihood of MSME's financial growth, suggesting the significance of innovation does not apply to MSMEs in Indonesia. Lastly, MSMEs' risk behavior to operate in a stable business environment is found more likely to result in a better performance and is true for operational and financial risks, but not marketing risks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.26-35
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• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Corrosion Science and Technology
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• v.23 no.2
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• pp.93-103
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• 2024

In the present work, a phase-field model for dendritic solidification is applied to hot-dip ZnAlMg coatings to elucidate the morphology of zinc dendrites and the solute segregation leading to the formation of eutectics. These aspects define the microstructure that conditions the corrosion resistance and the mechanical behaviour of the coating. Along with modelling phase transformation and solute diffusion, the implemented model is partially coupled with the tracking of crystal orientation in solid grains, thus allowing the effects of surface tension anisotropy to be considered in multi-dendrite simulations. For this purpose, the composition of a hot-dip ZnAlMg coating is assimilated to a dilute pseudo-binary system. 1D and 2D simulations of isothermal solidification are performed in a finite element solver by introducing nuclei as initial conditions. The results are qualitatively consistent with existing analytical solutions for growth velocity and concentration profiles, but the spatial domain of the simulations is limited by the required mesh refinement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.162-166
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• 1993

Spodumene$(LiAlLi_2O_6)$ single crystal was grown by Floating Zone process using the image furnace having the halogen lamp as heat sources. The crystal had the dimension of 50~60mm length and 6~8mm diameter. The colors of as-grown crystals were green, black and pale green respectively. The composition of the crystal was analized by XRD and FUR measurement. Growth orientation was examined by Laue back reflection pattern and for measuring the light transmittance, OPtical transmittance was measured.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.14 no.2
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• pp.47-59
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• 2019

Various studies have been carried out on the subject of entrepreneurship, which is required to create new businesses and organizations during the early process of startups based on innovative technologies and ideas. At the same time, the concept of organizational entrepreneurial orientation, which explains how to manage enterprises in the process of pioneering new products and markets, is drawing more and more attention for the purpose of continuously creating and maintaining a competitive edge of startups. This study focused on the relationship between entrepreneurial orientation and startup performance and the role of technological orientation and social capital. An empirical research was conducted on 144 different startup companies residing in startup supporting institutions. To evaluate the suitability of the research model, a PLS-based structural equation model was used. The research results are as follows: First, the entrepreneurial orientation of startups was found to have a positive effect on startup performance. Second, it was shown that entrepreneurial orientation had a positive effect on all three dimensions of social capital and technological orientation. Third, it has been shown that technological orientation and the cognitive dimension of social capital mediates the relationship between entrepreneurial orientation and startup performance. Through this, it was confirmed that entrepreneurial orientation directly affects startup performance, and it even influences the growth of startups by increasing technological superiority and social capital which is inherent in the network. Also, the research identified the need for additional research on the relationship between the strengthening of technological orientation and strategical orientation in startups. This study is expected to expand the discussion about social capital in the field of startup related research by affirming the role and importance of the cognitive system embedded in the network as well as the connectivity of networks, which has been already emphasized in previous startup related studies. Finally, the results of this study were reflected to present new practical implications.