• Title/Summary/Keyword: growth behavior

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Study on the growth of 4H-SiC single crystal with high purity SiC fine powder (고순도 SiC 미분말을 적용한 4H-SiC 단결정 성장에 관한 연구)

  • Shin, Dong-Geun;Kim, Byung-Sook;Son, Hae-Rok;Kim, Moo-Seong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.29 no.6
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    • pp.383-388
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    • 2019

  • High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.

  • https://doi.org/10.6111/JKCGCT.2019.29.6.383 인용 PDF KSCI