• Applied Biological Chemistry
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• v.24 no.4
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• pp.218-223
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• 1981

This study was conducted to investigate the effects of post-harvest drying method and subsquent storage condition on the quality of garlic bulbs for 10 months from July, 1980 to April, 1981. The 27% weight loss of garlic bulbs by HPHD (hot air post-harvest frying) for 12 days at $40^{\circ}C$ (8hrs/day) was equal to that by NPHD (conventional natural post-harvest drying) for 35 days. But the decay occured 5.5% only in NPHD. During the storage period of garlic bulbs by HPHD, their decay and weight ]oss were less 25.4% and 13.5% in ambient storage, and less 14.2% and 7.5% in low temperature storage than those of NPHD. When garlic bulbs were stored in low temperature, the weight loss and decay were less 20.0% and 22.4% in NPHD, and tess 14.0% and 9.9% in HPHD than those in ambient temperature storage. The Quality of garlic bulbs packed with 0.08mm polyethylene film stored at ambient temperature for 2 months was so poor as to be inedible because of the adverse effect of $CO_2$ and the growth of molds, but in low temperature storage for 10 months it was in good shape showing the weight loss, the decay and the sprouting 2.6%, 3.4% and 26.8%, respectively.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.92-97
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• 2013

The luminescence properties of InAs/GaAs quantum dots (QDs) grown by a migration enhanced epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The MEE method supplies materials in a series of alternate depositions with migration enhancing time between each deposition. After In source was supplied for 9.3 s, the growth was interrupted for 5 s. Subsequently, As source was open for 3 (AT3), 4(AT4), 6 (AT6), or 9 s (AT9), and the growth was interrupted for 5 s again. This growth sequence was repeated 3 times for the growth of InAs QDs. The PL peak of the AT3 was 1,140 nm and the PL intensity was very weak compared with that of the other three samples. The PL peak of all samples except the AT3 sample was 1,118 nm, which is blueshifted from 1,140 nm, and the PL intensity was increased compared to that of the AT3. These results can be explained by the increased QD density and the improved QD uniformity. The AT6 sample showed the strongest PL intensity and the narrowest full width at half maximum. The PL decay time of AT6 increased with increasing emission wavelength from 940 to 1,126 nm, reaching a maximum decay time of 1.09 ns at 1,126 nm, and then decreased as the emission wavelength was increased further.

• Korean System Dynamics Review
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• v.4 no.2
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• pp.71-94
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• 2003

The purpose of this dissertation is to build a development density control model and estimate optimum developmental density level for a sustainable urban growth management. To develop the model, system dynamics modeling approach was used. The model was developed to analyze how urban growth, transition, and decay occur depending on the interaction among population, houses, industry structure, land and urban infrastructure such as road, water supply, and sewage treatment facilities. The model was applied to Anyang city to estimate optimum density level. Extensive computer simulation was conducted to find out the maximum numbers of population, industry structure, houses, and cars that can be adequately sustained with the current Anyang city's infrastructure capacity. The computer simulation result shows that the city is overpopulated by some 90,000 people. It nab analyzed that 20％ increase of existing capacity of urban infrastructure is necessary to support current population of Anyang city. To reduce the population to the adequate level whereby the current urban infrastructure can sustain, the current city regulation on floor area ratio needs be strengthened at least 20％ to 35%.

• Journal of Plant Biology
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• v.11 no.3
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• pp.1-7
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• 1968

Organic matter in rice-paddy soils exercises two antagonistic effects on the rice plant under water-logged conditions in growing season in the course of its decomposition: It liberates mineral nutrients and promotes soil fertility. On the other hand, however, it demands oxygen for its decay and therefore competes with rice roots for this element, when applied in large quantity of fresh status. For the practical end of rice culture, it is most desirable that these two effects should not contend with each other. To determine the proper content of organic materials to be applied, the influences of varied amounts of a homogeneous mixture of dried green manure, ranging from 0 to 20g/pot (1/20,000 tanbo), upon hte growth of rice was investigated in a sand culture. Labeled phosphorus fertilizer was also used in the form of KH232PO4 to evaluate the availability of this nutrient in the soil. Under the present experimental conditions, green mature seems to have influenced little on the growth of rice, except on number of grains produced and grains/straw ratio. Moreover, no sympton of growth inhibition is obsrvable even by the largest amount of its application. The available phosphorus, as estimated by A-value, appears to have increased, as the amount of organic materials applied increases. In view of the fact that pure sand instead of a paddy soil is used in this culture, the present results would not be directly applicable to practical rice farming. Besides, the estimated A-value is in need of further study, since it varies according to method of application, as suggested by Nishigki et. al. (1958).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.1
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• pp.20-26
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• 2013

Special attention in the role of convection in vapor crystal growth has been paid since some single crystals under microgravity environments less than 1 $g_0$ exhibits a diffusive-convection mode and much uniformity in front of the crystal regions than a normal gravity acceleration of 1 $g_0$. The total molar fluxes show asymmetrical patterns in interfacial distribution, which indicates the occurrence of either one single or more than one convective cell. As the gravitational level decreases form 1 $g_0$ down to $1.0{\times}10^{-4}\;g_0$, the intensity of convection, indicative of the maximum molar fluxes, is reduced significantly for ${\Delta}T=30K$ and 90 K. The total molar fluxes decay first order exponentially with the partial pressure of component B, PB (Torr) for 20 Torr ${\leq}PB{\leq}$ 300 Torr, and two gravity accelerations of $g_y=1\;g_0$ and 0.1 $g_0$.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.4
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• pp.409-413
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• 2005

A method to estimate the autotrophic maximum specific growth rate is presented in this paper. First of all, the concentration of nitrifier is simulated based on the amount of N nitrified, the sludge age and the default value for the decay coefficient. Secondly the OUR of the sludge with access of ammonia is measured. The maximum specific growth rate can be calculated as ${\mu}_{max,A}\;=\;OUR_{max,A}/Y_A$. It was demonstrated that the maximum specific growth rate of autotrophic biomass is not a constants but a time variable parameter. It is concluded that using $OUR_{max,A}$ for dynamic estimating maximum specific growth rate is a good approach and that using a constant value for the maximum specific growth rate over a longer period of time could not predict the performance of activated sludge plants.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.366-376
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• 1997

$CdGa_2Se_4$, epilayer of tetragonal type are grown on Si(100) substrate by hot wall epitaxy method. The source and substrate temperature is $580^{\circ}C$ and $420^{\circ}C$ respectively, and the thickness of the film is 3 $\mu \textrm{m}$. The crystallihe structure of epilayers were investigated by double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Se vapor the photoconductive characteristics are best. Then we obtained the sensitivity of 0.98, the value of pc/dc of $9.62{\times}10^6$, the MAPD of 321 ㎽ and the rise and decay time of 9 ㎳ and 9.5 ㎳, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.341-350
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• 1996

The CdS thin films are grown on quartz plate by hot wall epitaxy. The source and substrate temperature is $590^{\circ}C$ and $400^{\circ}C$ respectively, and thickness of the film is $2.5\;\mu\textrm{m}$. Using extrapolation method of X-ray diffraction patterns for the CdS thin film, it was found hexagonal structure whose lattice constant a and c were $4.137\;{\AA}$ and $6.713\;{\AA}$, respectively. Hall effect on this sample was measured by the method of van der Pauw and studied on cattirer density and mobility depending on temperature. From hall data, the mobility was likely to be decreased by piezoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore the applicability as a photoconductive cell we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Cu vapor the photoconductive characteristics are the best. Then we obtained the sensitivity of 0.99, the value of pc/dc of $9.42{\times}10^{6}$, the MAPD of 318 mW, and the rise and decay time of 10 ms and 9 ms, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.848-853
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• 2010

We have grown GaN nanowires by the low pressure MOCVD method on Ni deposited oxidized Si surface and have established optimum conditions by observing surface microstructure and its photoluminescence. Optimum growth temperature of $880^{\circ}C$, growth time of 30 min, TMG source flow rate of 10 sccm have resulted in dense nanowires on the surface, however further increase of growth time or TMG flow rate has not increased the length of nanowire but has formed nanocrystals. On the contrary, the increase of ammonia flow has increased the length of nanowires and the coverage of nanowire over the surface. The shape of nanowire is needle-like with a Ni droplet at its tip; the length is tens of micron with more than 40 nm in diameter. Low temperature photoluminescence obtained from the sample at optimum growth condition has revealed several peaks related to exciton decay near band-edge, but does not show any characteristic originated from one dimensional quantum confinement. Strong and broad luminescence at 2.2 eV is observed from dense nanowire samples and this suggests that the broad band is related to e-h recombination at the surface state in a nanowire. The current result is implemented to the nanowire device fabrication by nanowire bridging between micro-patterned neighboring Ni catalysis islands.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.211-216
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• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.