• The Journal of the Korea institute of electronic communication sciences
• /
• v.7 no.6
• /
• pp.1479-1485
• /
• 2012

The parking management system can increase driver's convenience with detailed parking information service in the parking lot. At the same time, parking management system consumes non-negligible electrical energy with large amount of sensors, displays and control modules. With the increase in the demand for green and sustainable building design all over the world, it becomes a meaningful issue for parking management system to reduce operating power. This paper presents the preliminary design and estimated results of a parking management system which is optimized to reduce the power consumption mainly on detectors and displays. The system design is based on pre-developed wireless parking detectors, Park Tile and Park Disk. The system has a number of parking space detectors, vehicle count detectors, information displays, guidance terminals and other control units. We have performed system architecture design, communication network design, parking information service scenario planning, battery life regulation and at last operating power estimation. The estimated operating power was 0.93KW per parking-slot, which is 20% of traditional systems. The estimated annual maintenance cost was 18% of traditional systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.65-65
• /
• 2015

In this talk, I will introduce two topics. The first topic is the polymer light emitting diodes (PLEDs) using graphene oxide quantum dots as emissive center. More specifically, the energy transfer mechanism as well as the origin of white electroluminescence in the PLED were investigated. The second topic is the facile synthesis of eco-friendly III-V colloidal quantum dots and their application to light emitting diodes. Polymer (organic) light emitting diodes (PLEDs) using quantum dots (QDs) as emissive materials have received much attention as promising components for next-generation displays. Despite their outstanding properties, toxic and hazardous nature of QDs is a serious impediment to their use in future eco-friendly opto-electronic device applications. Owing to the desires to develop new types of nanomaterial without health and environmental effects but with strong opto-electrical properties similar to QDs, graphene quantum dots (GQDs) have attracted great interest as promising luminophores. However, the origin of electroluminescence (EL) from GQDs incorporated PLEDs is unclear. Herein, we synthesized graphene oxide quantum dots (GOQDs) using a modified hydrothermal deoxidization method and characterized the PLED performance using GOQDs blended poly(N-vinyl carbazole) (PVK) as emissive layer. Simple device structure was used to reveal the origin of EL by excluding the contribution of and contamination from other layers. The energy transfer and interaction between the PVK host and GOQDs guest were investigated using steady-state PL, time-correlated single photon counting (TCSPC) and density functional theory (DFT) calculations. Experiments revealed that white EL emission from the PLED originated from the hybridized GOQD-PVK complex emission with the contributions from the individual GOQDs and PVK emissions. (Sci Rep., 5, 11032, 2015). New III-V colloidal quantum dots (CQDs) were synthesized using the hot-injection method and the QD-light emitting diodes (QLEDs) using these CQDs as emissive layer were demonstrated for the first time. The band gaps of the III-V CQDs were varied by varying the metal fraction and by particle size control. The X-ray absorption fine structure (XAFS) results show that the crystal states of the III-V CQDs consist of multi-phase states; multi-peak photoluminescence (PL) resulted from these multi-phase states. Inverted structured QLED shows green EL emission and a maximum luminance of ~45 cd/m2. This result shows that III-V CQDs can be a good substitute for conventional cadmium-containing CQDs in various opto-electronic applications, e.g., eco-friendly displays. (Un-published results).

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.19 no.2
• /
• pp.187-192
• /
• 2019

Hybrid power storage system with emergency power function for demand management and power outage minimizes the investment cost in the building of buildings and factories requiring emergency power generation facilities, We propose a new business model by developing technology that can secure economical efficiency by reducing power cost at all times. Normally, system power is supplied to load through STS (Static Transfer Switch), and PCS is connected to system in parallel to perform demand management. In order to efficiently operate the electric power through demand forecasting, the EMS issues a charge / discharge command to the ESS as a PMS (Power Management System), and the PMS transmits the command to the PCS controller to operate the system. During the power outage, the STS is rapidly disengaged from the system, and the PCS becomes an independent power supply and can supply constant voltage / constant frequency power to the load side. Therefore, it is possible to secure reliability through verification of actual system linkage and independent operation performance of hybrid ESS, By enabling low-carbon green growth technology to operate in conjunction with an efficient grid, it is possible to improve irregular power quality and contribute to peak load by generating renewable energy through ESS linkage. In addition, the ESS is replacing the frequency follow-up reserve, which is currently under the charge of coal-fired power generation, and thus it is anticipated that the operation cost of the LNG generator with high fuel cost can be reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.23-23
• /
• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.229-229
• /
• 2010

본 실험에서는 $CuInSe_2$, 3원물질을 화학량론적 조성비가 되도록 박막을 제조하기 위해 각 단위원소를 원자비에 맞춰 전자선가열 진공증착기를 사용하여 Cu, In, Se 순으로 증착하였다. $10^{-3}$torr 이상의 진공석영관에서 열처리와 동시에 Selenization을 통해 제작된 $CuInSe_2$박막은 열처리온도 $250^{\circ}C$에서는 $Cu_xSe$, CuSe등의 2차상들이 나타나다가 $450^{\circ}C$이상의 고온에서 $CuInSe_2$ 단일상을 형성하였다. 이로부터 진공중에서 반응을 시켰을 때, 더 낮은 온도에서 반응이 일어나고 열역학적으로 보다 안정한 소수의 화합물들이 쉽게 형성됨을 확인할 수 있었다. 특히 $250^{\circ}C$에서는 Sphalerite 구조를 가지다가 $350^{\circ}C$이상의 온도에서 Selenization하였을 때 Chalcopyrite 구조를 가졌다. 박막이 두꺼워지면서 결정립의 크기가 커지고 응력이 작아지는 특성을 보였다. 에너지 밴드갭은($E_g$)은 Cu/In 성분비율이 클수록 작은값을 보였으며, 결절립크기가 증대되므로 결국 흡수계수가 낮아짐을 알 수 있다. 또한 두께가 증가할수록 전반적으로 흡수계수가 증가하였고 Cu/In의 성분비율이 0.97일 때 기초흡수파장은 1,169nm이고 에너지밴드갭은 1.06eV이었으며, 두께 $1.5{\mu}m$이상일 때 전반적으로 양호한 상태의 p-type $CuInSe_2$ 박막을 제작 하였다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.3.1-3.1
• /
• 2010

Water splitting reaction using photocatalysts is of great interest in the utilization of solar energy [1]. In the present work, visible light-responsive $TiO_2$ thin films (Vis-$TiO_2$) were prepared by a radio frequency magnetron sputtering (RF-MS) deposition method and applied for the separate evolution of $H_2$ and $O_2$ from water as well as the photofuel cell. Special attentions will be focused on the effect of HF treatment of Vis-$TiO_2$ thin films on their photocatalytic activities. Vis-$TiO_2$ thin films were prepared by an RF-MS method using a calcined $TiO_2$ plate and Ar as the sputtering gas. The Vis-$TiO_2$ thin films were then deposited on the Ti foil substrate with the substrate temperature at 873 K (Vis-$TiO_2$/Ti). Vis-$TiO_2$/Ti thin films were immersed in a 0.045 vol% HF solution at room temperature. The effect of HF treatments on the activity of Vis-$TiO_2$/Ti thin films for the photocatalytic water splitting reaction have been investigated. Vis-$TiO_2$/Ti thin films treated with HF solution (HF-Vis-$TiO_2$/Ti) exhibited remarkable enhancement in the photocatalytic activity for $H_2$ evolution from a methanol aqueous solution as well as in the photoelectrochemical performance under visible light irradiation as compared with the untreated Vis-$TiO_2$/Ti thin films. Moreover, Pt-loaded HF-Vis-$TiO_2$/Ti thin films act as efficient and stable photocatalysts for the separate evolution of $H_2$ and $O_2$ from water under visible light irradiation in the presence of chemical bias. Thus, HF treatment was found to be an effective way to improve the photocatalytic activity of Vis-$TiO_2$/Ti thin films. Furthermore, unique separate type photofuel cell was fabricated using a Vis-$TiO_2$ thin film as an electrode, which can generate electrical power under solar light irradiation by using various kinds of biomass derivatives as fuel. It was found that the introduction of an iodine ($I^-/{I_3}^-$) redox solution at the cathode side enables the development of a highly efficient photofuel cell which can utilize a cost-efficient carbon electrode as an alternative to the Pt cathode.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.9
• /
• pp.261-268
• /
• 2018

The use of electric cable was limited due to the installation time and large space as the increase of power demand and load quantity in side line. In order to solve these problems, the application of busway system which can supply the large current was increasing. But it was lack of methods of performance tests to evaluate the reliability and results of test for busway system. In this paper, we presented items to evaluate the reliability test for epoxy coated busway system with reference to IEC 61349-6. In addition, we proposed items to evaluate the reliability and long term life cycle test for the epoxy coated busway system. The combined acceleration deterioration test that reflects actual conditions of the survey as much as possible was conducted considering both thermal and electrical stresses. The deterioration condition was selected to satisfy fifty years life expectation and the insulation performance verification test of the busway system confirmed the long term life prediction. Furthermore, as test items for reliability assessment of compliance with the environment for the use of temperature, humidity and load current where busway system was installed, thermal overload test, water immersion test, cold shock temperature test and thermal cycle test were performed. And we examined changes in characteristics and abnormality after tests. From results, the test items presented to evaluate performance and reliability of the epoxy insulated busway system were confirmed to be appropriate in this paper, and the performance of the product was also confirmed to be excellent for reliability tests.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.4
• /
• pp.127-134
• /
• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Journal of IKEEE
• /
• v.20 no.3
• /
• pp.220-225
• /
• 2016

In this paer, low on-resistance and high-power trench gate MOSFET (Metal-Oxide-Silicon Field Effect Transistor) incorporating current sensing FET (Field Effect Transistor) is proposed and evaluated. The trench gate power MOSFET was fabricated with $0.6{\mu}m$ trench width and $3.0{\mu}m$ cell pitch. Compared with the main switching MOSFET, the on-chip current sensing FET has the same device structure and geometry. In order to improve cell density and device reliability, self-aligned trench etching and hydrogen annealing techniques were performed. Moreover, maintaining low threshold voltage and simultaneously improving gate oxide relialility, the stacked gate oxide structure combining thermal and CVD (chemical vapor deposition) oxides was adopted. The on-resistance and breakdown voltage of the high density trench gate device were evaluated $24m{\Omega}$ and 100 V, respectively. The measured current sensing ratio and it's variation depending on the gate voltage were approximately 70:1 and less than 5.6 %.

• Science of Emotion and Sensibility
• /
• v.13 no.4
• /
• pp.703-710
• /
• 2010

In this study, a tactile stimulator was developed to resolve some problems from the previous version of the system such as system configuration, inappropriate stimulation control and additional problems. The developed tactile stimulator consists of control unit, drive unit and vibrator unit. The control unit was controlled by E-Prime software to generate appropriate vibration pulses. The drive unit supplies enough energy to the vibrator to generate effective stimulation pulses. The vibrator unit consists of small coin type vibrator and velcro, and was made to be attached at the hand easily. The developed tactile stimulator was designed by small-size, light-weight, low-power, simple-fabrication, max 35 channels and little delay time from instruction signal of E-Prime software to vibrator. The duration and magnitude of stimulation was controlled by 10 grades and the problems concerning stimulation control were compensated by wideband frequency ranges. Additionally, the electrical safety was ensured by low voltage operation. Vibrator was made to be attached on finger as well as on any part of the subject. Since this tactile stimulator is developed based on E-Prime software which is widely used in cognitive science, it is believed that this stimulator be suitable for the wide application of cognitive science study.