• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.320-323
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• 2015

본 연구에서는 18 atoms unit cell graphene film을 기반으로 한 graphene/h-BN heterostructure의 bandgap 변화에 대해 EDISON LCAODFTLab simulator의 DFT기반 전자구조계산을 통해 알아보았다. Graphene 상에 BN-doping 형태로 주어진 여러 heterostructure의 전자구조계산을 통해 태양전지의 이론적 최적효율을 나타내는 1.2eV 정도의 값을 갖는 구조를 찾을 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.2-287.2
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• 2016

Silicon has considerably good characteristics on electron, hole mobility and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1%. This photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene can be adjust by the external electric field. because of the fermi level of the graphene can be changed by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. The ratio between generated power of solar cell and consumption electrical power is remarkable. Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.79-79
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• 2009

• Applied Microscopy
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• v.44 no.4
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• pp.123-132
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• 2014

Silicene is one of the most interesting two-dimensional materials, because of not only the extraordinary properties similar to graphene, but also easy compatibility with existing silicon-based devices. However, non-existing graphitic-like structure on silicon and unstable free-standing silicene structure leads to difficulty in commercialization of this material. Therefore, substrates are essential for silicene, which affects various properties of silicene and supporting unstable structure. For maintaining outstanding properties of silicene, van der Waals bonding between silicene and substrate is essential because strong interaction, such as silicene with metal, breaks the band structure of silicene. Therefore, we review the stability of silicene on other two-dimensional materials for van der Waals bonding. In addition, the properties of silicene are reviewed for silicene-based heterostructure.

• Journal of the Korean Chemical Society
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• v.61 no.4
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• pp.168-178
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• 2017

$La/TiO_2$ - graphene composites were synthesized in this study, and applied to the photocatalytic degradation of Rhodamine B (RhB) under UV-visible light irradiation. X-ray diffraction (XRD), surface analysis, X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM), and Transmission electron microscopy (TEM) analysis demonstrated that $La/TiO_2$ nanoparticles were well distributed on the surface of graphene, and formed the heterostructure of $La/TiO_2$-graphene. Compared to the pure $TiO_2$, $La/TiO_2$-graphene composites displayed much higher photocatalytic activities in RhB degradation under UV-visible light irradiation. The photocatalytic data of $La/TiO_2$-graphene composites exhibit extended light absorption in the visible light region, and possess better charge separation capability than that of pure $TiO_2$. The high photocatalytic activity was attributed to the composite's high adsorptivity, extended light absorption, and increased charge separation efficiency, due to the excellent electrical properties of graphene, and the large surface contact between graphene and $La/TiO_2$ nanoparticles.

• Progress in Superconductivity and Cryogenics
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• v.25 no.1
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• pp.1-5
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• 2023

The study of two-dimensional electron systems with extraordinarily low levels of disorder was, for a long time, the exclusive privilege of the epitaxial thin film research community. However, the successful isolation of graphene by mechanical exfoliation has truly disrupted this field. Furthermore, the assembly of heterostructures consisting of several layers of different 2D materials in arbitrary order by exploiting van der Waals forces has been a game-changer in the field of low-dimensional physics. This technique can be generalized to the large class of strictly 2D materials and offers unprecedented parameters to play with in order to tune electronic and other properties. It has led to a paradigm shift in the field of 2D condensed matter physics with bright prospects. In this review article, we discuss three device fabrication techniques towards high mobility devices: suspended structures, dry transfer, and pick-up transfer methods. We also address state-of-the-art device structures, which are fabricated by the van der Waals pick-up transfer method. Finally, we briefly introduce correlated ground states in the fractional quantum Hall regime.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.9-10
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• 2010

Since the discovery of graphene by mechanical exfoliation from graphite[1], various fabrication methods are available today such as chemical exfoliation, epitaxial graphene on SiC substrates, etc. In view of industrialization, the mechanical exfoliation method may not be an option. Epitaxial graphene on SiC substrates, in this respect, is by far more practical because the method consists of conventional thermal treatments familiar to semiconductor industry. Still, the use of the SiC substrate itself, and hence the incompatibility with the Si technology, lessens the importance of this technology in its future industrialization. In this context, we have tackled the problem of forming graphene on Si substrates (GOS). Our strategy is to form an ultrathin (~80 nm) SiC layer on top of a Si substrate, and to graphitize the top SiC layers by a vacuum annealing. We have actually succeeded in forming the GOS structure [2,3,4]. Raman-scattering microscopy indicates presence of few-layer graphene (FLG) formed on our annealed SiC/Si heterostructure, with the G ($1580\;cm^{-1}$) and the G'($2700\;cm^{-1}$) bands, both related to ideal graphene, clearly observed. Presence of the D ($1350\;cm^{-1}$) band indicates presence of defects in our GOS films, whose elimination remains as a challenge in the future. To obtain qualified graphene films on Si substrate, formation of qualified SiC films is crucial in the first place, and is achieved by tuning the growth parameters into a process window[5]. With a potential for forming graphene films on large-scale Si wafers, GOS is a powerful candidate as a key technology in bringing graphene into silicon technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Journal of Adhesion and Interface
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• v.24 no.3
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• pp.100-104
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• 2023

Van der Waals heterostructures have garnered significant attention in recent research due to their excellent electronic characteristics arising from the absence of dangling bonds and the exclusive reliance on Van der Waals forces for interlayer coupling. However, most studies have been confined to fundamental research employing the Scotch tape (mechanical exfoliation) method. We fabricated Van der Waals vertical heterojunction transistors to advance this field using materials exclusively grown via chemical vapor deposition (CVD). CVDgrown graphene was patterned through photolithography to serve as electrodes, while CVD-grown MoSe₂ was employed as the pickup/transfer material, resulting in the realization of Van der Waals heterojunction transistors with interlayer charge transfer effects. The electrical characteristics of the fabricated devices were thoroughly examined. Additionally, we observed variations in the transistor's performance based on the presence of defects in MoSe₂ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.