• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.176.2-176.2
• /
• 2014

In this work, we demonstrated that the fabrication of flexible graphene-based chemical sensor with heaters by soft lithographic patterning method [1]. First, monolayer and multilayer graphene were prepared by thermal chemical vapor deposition transferred onto SiO2 / Si substrate in order to fabrication of patterned-sensor and -heater. Second, patterned-monolayer and multilayer graphene were detached through soft lithography process, which was transferred on top and bottom sides of PET film. Third, Au / Ti (Thickness : 100/30 nm) electrodes were deposited end of the patterned-graphene line by sputtering system. Finally, we measured sensor properties through injection of NO2 and CO2 gas on different temperature with voltage change of graphene heater.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.144.2-144.2
• /
• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.145.1-145.1
• /
• 2013

A prerequisite for the development of graphene-based field effect transistors (FETs) is reliable control of the type and concentration of carriers in graphene. These parameters can be manipulated via the deposition of atoms, molecules, and polymers onto graphene as a result of charge transfer that takes place between the graphene and adsorbates. In this work, we demonstrate a unique and facile methodology for the homogenous and stable p-type doping of graphene by hybridization with ZnO thin films fabricated by MeV electron beam irradiation (MEBI) under ambient conditions. The formation of the ZnO/graphene hybrid nanostructure was attributed to MEBI-stimulated dissociation of zinc acetate dihydrate and a subsequent oxidation process. A ZnO thin film with an ultra-flat surface and uniform thickness was formed on graphene. We found that homogeneous and stable p-type doping was achieved by charge transfer from the graphene to the ZnO film.

• Polymer(Korea)
• /
• v.37 no.4
• /
• pp.513-517
• /
• 2013

A novel conductive composite thin film was prepared for the first time by hybridization between polybenzoxazine (PBZ) having high heat resistance property and conductive graphene. Mechanically robust conductive graphene/PBZ composite thin films could effectively be prepared by a simple thermal treatment, which simultaneously induces reduction of graphene oxide (GO) and crosslinking reaction of benzoxazine monomer. Graphene sheets seem to be uniformly dispersed up to 3 wt% graphene content in the composite thin film as shown in the results of chemical/crystal structural and morphological analyses. This efficient route for making graphene/PBZ composite thin film would provide simultaneous improvement of mechanical property as well as electrical conductivity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.248-248
• /
• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.164.2-164.2
• /
• 2014

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of $329.7{\pm}16.9cm^2/V{\cdot}s$, and a high on-off ratio of $10^5$. The ambipolar behavior of the ZnO/graphene hybrid TFT with high electron mobility could be due to the superimposed density of states involving the donor states in the bandgap of ZnO thin films and the linear dispersion of monolayer graphene. We further established an applicable circuit model for understanding the improvement in carrier mobility of ZnO/graphene hybrid TFTs.

• Korean Journal of Materials Research
• /
• v.33 no.4
• /
• pp.159-163
• /
• 2023

Zinc-ion Batteries (ZIBs) are currently considered to be effective energy storage devices for wearable electronics because of their low cost and high safety. Indeed, ZIBs show high power density and safety compared with conventional lithium ion batteries (LIBs) and exhibit high energy density in comparison with supercapacitors (SCs). However, in spite of their advantages, further current collector development is needed to enhance the electrochemical performance of ZIBs. To design the optimized current collector for high performance ZIBs, a high quality graphene film is suggested here, with improved electrical conductivity by controlling the defects in the graphene film. The graphene film showed improved electrical conductivity and good electron transfer between the current collector and active material, which led to a high specific capacity of 346.3 mAh g^-1 at a current density of 100 mA g^-1, a high-rate performance with 116.3 mAh g^-1 at a current density of 2,000 mA g^-1, and good cycling stability (68.0 % after 100 cycles at a current density of 1,000 mA g^-1). The improved electrochemical performance is firmly because of the defects-controlled graphene film, leading to improved electrical conductivity and thus more efficient electron transfer between the current collector and active material.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.618-618
• /
• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.165-165
• /
• 2014

In this study, we demonstrated that the soft lithographic patterning processing of chemical vapor deposition (CVD) graphene and rGO sheets as large scale, low cost, high quality and simplicity for future industrial applications. Recently, a previous study has reported that single layer graphene grown via CVD was patterned and transferred to a target surface by controlling the surface energy of the polydimethylsiloxane (PDMS) stamp [1]. Using this approach, the surface of a relief-patterned elastomeric stamp was functionalized with hydrophilic dimethylsulfoxide (DMSO) molecules to enhance the surface energy of the stamp and to remove the graphene-based layer from the initial substrate and transfer it to a target surface [2]. Further, we developed a soft lithographic patterning process via surface energy modification for advanced graphene-based flexible devices such as transistors or simple and efficient chemical sensor consisting of reduced graphene oxide (rGO) and a metallic nanoparticle composite. A flexible graphene-based device on a biocompatible silk fibroin substrate, which is attachable to an arbitrary target surface, was also successfully fabricated.

• Applied Science and Convergence Technology
• /
• v.24 no.4
• /
• pp.117-124
• /
• 2015

A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.