• 전기의세계
• /
• v.31 no.3
• /
• pp.218-225
• /
• 1982

Metal-Oxide-Metal thin film diodes have been fabricated on the glass substrates by conventional vacuum evaporation method, and the electrical properties, primarily current-voltage characteristics of diodes, have been discussed in the light of various conduction theories presented so far. The experimental results were ploted in the different figures according to the assumed theory, and the characteristic coefficients peculior to these theories were estimated from the function dependence of current (I) upon voltage (V), temperature (T) and oxide film thickness (d).

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2008.11a
• /
• pp.5-5
• /
• 2008

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2007.11a
• /
• pp.109-111
• /
• 2007

Pulsed DC 마그네트론 스퍼터링 장치를 이용하여 Polymer 및 Glass 기판 위에 $SiN_{\chi}$ (Silicon Nitride) 박막을 합성 시키고 이들의 구조적, 광학적 특성을 조사하였다. 막두께는 100 nm로 고정하였으며, power mode 및 질소 가스 유량비를 변수로 합성하였다.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.1
• /
• pp.26-31
• /
• 2006

Small form factor optical disks for near-field optics using solid immersion lens were developed. Diamond like carbon film and lubricant film were coated on the small form factor optical disk to enhance the head-disk interface(HDI) characteristics. The disk durability properties in terms of HDI phenomena were investigated by drag test. Disks with glass substrates and the lubricant films experienced heat treatment showed more durable characteristics. Coverlayers made of UV resin were uniformly coated by spin coating in which the ski-jump could be removed by adopting outer ring technique

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1640-1644
• /
• 2006

The first issue that should be overcome in copper process is its poor adhesive strength between pure copper film and glass substrate. In this study, defining the adhesive strength of pure copper film on various substrates and clarifying the key deposition parameters are presented for the investigation of copper process. First, using different kinds of surface plasma treatments were studied and the results showed that the adhesive strength was not improved even though the roughness of glass substrate surface was increased. Second, adding an adhesive layer between glass substrate and pure copper film was used to enhance the adhesion. Based on the data in the present paper, adopting copper alloy film as an adhesive layer can have capability preventing peeling problem in copper process. Besides, Cu/Cu alloy structure could be etched with the same etchant with better taper angle than the one with single layer of Cu. Unlike Cu/Mo structure, there is no residual problem for Cu/Cu alloy structure during etching process. Finally, this structure was examined in electrical test without significant difference in comparison with the conventional metal process.

• Electrical & Electronic Materials
• /
• v.8 no.1
• /
• pp.95-101
• /
• 1995

Crystallizable glasses with precipitation of celsian, anorthite, wollastonite and gahnite were prepared for the purpose of insulating dielectric layers in devices such as integrated circuit substrates. The starting glasses were prepared by melting the batches for 1 hour at 1450.deg. C and then Quenching to a distilled water. And crystallization behavior of these glasses were studied by DTA, TMA, XRD analysis and by the measurement of dielectric properties. The overall composition of the glass-ceramic consists in weight percent of 30-35% A1$_{2}$O$_{3}$, 13-26% BaO, 5-21% CaO, 10-24% ZnO, 4.5-9.0% TiO$_{2}$ and 4-8% B$_{2}$O$_{3}$. As a result, in barium-rich glasses only celsian phase was developed in the range of 850-900.deg. C. Also, the thermal expansion coefficient, dielectric constant and quality factor of these glass-ceramics were 68*10$^{-7}$ /.deg. C, about 9 and more than 1000, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.262-263
• /
• 2005

Pt counter electrode based on flexible metal for dye-sensitized solar cells(DSCs) has been investigated. Photovoltaic structures on lightweight substrates have several advantages over the heavy glass-based structures in both terrestrial and space applications. Cyclic voltammetry and impedance spectroscopy were used to investigate electrochemical properties of Pt counter electrode both FTO glass and SUS sheet substrate. The DSCs composed of the counter electrode based on a stainless steel substrate has obtained conversion efficiencies comparable to that based on the conducting glass. The counter electrode based on the stainless steel substrate has the merit of improving the fill factor and conversion efficiency of the DSCs by reducing its internal resistance.

• Applied Microscopy
• /
• v.25 no.1
• /
• pp.130-138
• /
• 1995

TEM specimen preparation methods have been examined to characterize Cu oxide particles in the polyimide film. Polyimide films were prepared by coating polyamic acid onto Cu films which had been deposited on TEM-mask and glass substrates and Cu foil, followed by thermal curing. In case of TEM-mask, direct observation was possible without further preparation. In other cases, TEM specimen were made by separating polyimide film from the substrate. Polyimide films were removed from glass and Cu foil by dissolving glass in HF solution and Cu foil in $H_{2}SO_{4}$ solution. TEM-mask observation confirms that fine $Cu_{2}O$ particles precipitate in the polyimide as a result of reaction of polyamic acid with Cu. However $Cu_{2}O$ particle reacts with HF and $H_{2}SO_{4}$ solution during dissolving the substrate and interpretation could be misled. It is concluded characterization of $Cu_{2}O$ particle in polyimide using TEM-mask is better than other methods.

• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.211-217
• /
• 1998

Si and ITO-coated #7059 glass wafers were electrostatically bonded by employing #7740 interlayer. It was inferred that the thermionic- electrostatic migration of $Na^{+}$ ions in the #7740 interlayer played an important role in the bonding process through SIMS analysis. The temperature and voltage required for reliable electrostatic bonding were in the range of $180{\sim}200^{\circ}C$ and $50{\sim}70V_{dc}$(10min), respectively. The low temperature Si-ITO coated glass bonding can be effectively applied to the packaging of field emission devices.

• Journal of the Korean Society for Heat Treatment
• /
• v.12 no.3
• /
• pp.199-205
• /
• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.