• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.989-992
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• 1997

The objective of this study is to develop stencil cutting process and determine optimal conditions which make good-quality stencil by using a Nd:YAG laser. The effects of process parameters such as laser power, type of mask, gas pressure, cutting speed and pulse width on the cut edge quality were investigated. In order to analyze the cut surface characteristics(roughness, kerf width, dross) optical microscopy, SEM photography and roughness test were used. A a results, the optimal conditions of process parameters were determined, and the practical feasibility of the proposed system is also examined by using a commercial gerber file for PCB stencil manufacturing.

• Journal of Welding and Joining
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• 제18권4호
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• pp.64-69
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• 2000

Reliability of PBGA(Plastic Ball Grid Array) package is very weak compared with normal plastic packages. The reliability are the lower resistance to popcorn cracking, which is reduced by moisture absorption in PCB(Printed Circuit Board). This paper adapts plasma treatment process and analyzes their effect. The contents of C and Cl decrease after plasma treatment but O, Ca and N relatively increase. The Plasma treatment to improve the adhesion between EMC(Epoxy Molding Compound) and PCB(solder mask). The degree of improvement was over 100% Max., which is depend on the properties of EMC. Ar+H$_2$as plasma gas show good result. There is a little difference in RF power and treatment time.

• 한국표면공학회지
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• 제29권6호
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• pp.869-875
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• 1996

In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

• 한국레이저가공학회지
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• 제4권2호
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• pp.47-57
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• 2001

This study deals with the laser cutting of stencil for the PCB. The most important aim of this study is to determine optimal conditions which make good-qualify stencil in Nd:YAG laser cutting. We made an experiment according to various variables (power. type of mask. gas pressure, cutting speed, and pulse width) and analyzed the cutting characteristics (surface roughness, kerf width. dross) . Each variable has optimal value for good-qualify cut edge under fixed condition. And neural network after learning experimental data with a million time iteration could predict surface roughness of cut edge under arbitrary condition approximately.

• 센서학회지
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• 제3권1호
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• pp.40-45
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• 1994

SAW 가스센서의 기판으로 $112^{\circ}$ rot. x-cut $LiTaO_{3}$ 기판을 사용하였고, 사진식각법으로 reference delay line과 sensing delay line으로 구성된 dual delay line SAW소자를 제작하였다. 각각의 IDT는 전극의 폭이 $10{\mu}m$이고, 10 개의 전극쌍을 갖는다. 각각 두개의 delay line 중에서 reference delay line은 감지막을 증착시키지 않고, sensing delay line은 유기물 반도체의 일종인 Pb-프탈로시아닌을 shadow mask로써 $10^{-5}$torr의 진공하에서 선택적으로 증착시켰다. 제작된 SAW소자로 rf amp.와 AGC(Auto Gain Control)를 사용하여 dual delay line oscillator를 만들었다. 이때 발진주파수는 $87{\sim}$89 MHz였다. 온도와 $NO_{2}$ 가스농도의 변화에 따른 발진주파수의 변화를 조사하였다.

• 공업화학
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• 제16권6호
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• pp.853-856
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• 2005

자성 메모리반도체의 핵심 소자인 magnetic tunnel junction (MTJ) stack에 대한 고밀도 유도결합 플라즈마 반응성 식각이 연구되었다. MTJ stack은 electron(e)-beam lithography 공정을 사용하여 나노미터 크기의 패턴 형성이 되었으며 식각을 위한 하드 마스크(hard mask)로서 TiN 박막이 이용되었다. TiN 박막은 Ar, $Cl_2/Ar$, 그리고 $SF_6/Ar$들의 가스를 사용하여 식각공정이 연구되었다. E-beam lithography로 패턴된 TiN/MTJ stack은 첫 번째 단계로 TiN 하드 마스크가 식각되고 두 번째로 MTJ stack이 식각되어 완성되었다. MTJ stack은 Ar, $Cl_2/Ar$, $BCl_3/Ar$을 이용하여 식각되었으며 각각의 가스농도와 가스 압력을 변화시켜 MTJ stack의 식각특성이 조사되었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권6호
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• pp.451-455
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• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.56-59
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• 2000

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

• 한국정보통신학회논문지
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• 제10권9호
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• pp.1641-1647
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• 2006

나노입자 크기를 가진 얇은 $SnO_2$ 박막을 이용하여 CO 및 $H_2S$에 대한 우수한 감도를 가지는 복합 마이크로 가스센서 어레이를 제작하였다. 나노입자의 박막을 만들기 위해서 약 $2500{\AA}$ 두께의 $SnO_2,\;SnO_2(+Pt),\;SnO_2(+CuO)$ 막을 셰도우마스크를 사용하여 형성 한 후, 이를 $600{\sim}800^{\circ}C$의 온도에서 산화하므로서 나노입자의 $SnO_2$ 모물질의 가스감지 박막을 형성하였다. 실리콘 기판의 마이크로센서의 형태로 제작된 $SnO_2(Pt)$ 및 $SnO_2(+CuO)$ 가스센서는 각각 CO 및 $H_2S$ 가스에 대한 매우 우수한 감도를 나타내는 것을 확인하였다.

• Asian Pacific Journal of Cancer Prevention
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• 제16권7호
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• pp.2629-2635
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• 2015

Most cancer patients experience nausea and vomiting after surgery. Today, many methods of treatment have been developed and used for the control of such symptoms. The most important are drug therapy, relaxation, oxygen therapy and gas therapy. In addition, dexamethasone, massage therapy and using a Venturi mask have also proven effective. Due to the nature of gas consumption which leads to nausea it is recommended that use of N2O in the operating room be avoided or applied in combination with oxygen or other gases with fewer complications.