• Title/Summary/Keyword: gas mask

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Development of laser process for stencil manufacturing (스텐실 제작용 레이저 공정기술 개발)

  • 신동식;이영문;이제훈
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 1997.10a
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    • pp.989-992
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    • 1997
  • The objective of this study is to develop stencil cutting process and determine optimal conditions which make good-quality stencil by using a Nd:YAG laser. The effects of process parameters such as laser power, type of mask, gas pressure, cutting speed and pulse width on the cut edge quality were investigated. In order to analyze the cut surface characteristics(roughness, kerf width, dross) optical microscopy, SEM photography and roughness test were used. A a results, the optimal conditions of process parameters were determined, and the practical feasibility of the proposed system is also examined by using a commercial gerber file for PCB stencil manufacturing.

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Improvement of Interface Adhesionin Ball Grid Array Packages by Plasma Treatment (플라즈마 처리에 의한 BGA 패키지의 계면 접착력 향상)

  • 김경섭;한완옥;장의구
    • Journal of Welding and Joining
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    • v.18 no.4
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    • pp.64-69
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    • 2000
  • Reliability of PBGA(Plastic Ball Grid Array) package is very weak compared with normal plastic packages. The reliability are the lower resistance to popcorn cracking, which is reduced by moisture absorption in PCB(Printed Circuit Board). This paper adapts plasma treatment process and analyzes their effect. The contents of C and Cl decrease after plasma treatment but O, Ca and N relatively increase. The Plasma treatment to improve the adhesion between EMC(Epoxy Molding Compound) and PCB(solder mask). The degree of improvement was over 100% Max., which is depend on the properties of EMC. Ar+H$_2$as plasma gas show good result. There is a little difference in RF power and treatment time.

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ICP ETCHING OF TUNGSTEN FOR X-RAY MASKS

  • Jeong, C.;Song, K.;Park, C.;Jeon, Y.;Lee, D.;Ahn, J.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.869-875
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    • 1996
  • In this article the effects of process parameters of inductively coupled plasma etching with $SF_6$ /$N_2$/Ar mixture gas and mask materials on the etched profile of W were investigated. While the etched profile was improved by $N_2$-addition, low working presure, and reduced $SF_6$ flow rate, the etching selectity (W against SAL resist) was decreased. Due to the difficulty of W etching with single layer resist, sputter deposited $Al_2O_3$ film was used as a hardmask. Reduction of required EB resist thickness through $Al_2O_3$ mask application could reduce proximity effect during e-beam patterning, but the etch anisotropy was degraded by decreased sidewall passiviation effect.

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Stencil cutting process by Nd:YAG laser II -Influence of process parameters on cutting characteristics of stencil- (Nd:YAG레이저를 이용한 스텐실 절단공정II -레이저의 공정변수가 스텐실 절단특성에 미치는 영향-)

  • Lee, Je-Hoon;Seo, Jung;Kim, Jung-Oh;Shin, Dong-Sik;Lee, Young-Moon
    • Laser Solutions
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    • v.4 no.2
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    • pp.47-57
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    • 2001
  • This study deals with the laser cutting of stencil for the PCB. The most important aim of this study is to determine optimal conditions which make good-qualify stencil in Nd:YAG laser cutting. We made an experiment according to various variables (power. type of mask. gas pressure, cutting speed, and pulse width) and analyzed the cutting characteristics (surface roughness, kerf width. dross) . Each variable has optimal value for good-qualify cut edge under fixed condition. And neural network after learning experimental data with a million time iteration could predict surface roughness of cut edge under arbitrary condition approximately.

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Fabrication and Characteristics of SAW Gas Sensor (SAW 가스센서의 제작 및 특성)

  • Jun, C.B.;Park, H.D.;Choi, D.H.;Lee, D.D.
    • Journal of Sensor Science and Technology
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    • v.3 no.1
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    • pp.40-45
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    • 1994
  • $112^{\circ}$ rot. x-cut $LiTaO_{3}$ wafer was used as the substrate of SAW gas sensor. Dual delay line SAW device with IDTs which consist of the reference delay line and the sensing delay line was fabricated using photolithigraphy. Each IDTs had 10 finger pairs and finger spacing is 10 microns. One delay line channel is the reference, while the second is the sensing channel with Pb-phthalocyanine film in the propagation path. Pb-phthalocyanine film which is p-type organic semiconductor was evaporated in $10^{-5}$ torr vacuum using shadow mask selectively. Dual delay line oscillator was constructed by using the rf amplifier and AGC. Frequency of the IDTs had the range of $87{\sim}$89 MHz oscillation frequency. Oscillation frequency shifts were investigated as a function of the temperature and the concentration of $NO_{2}$ gas.

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Etch Characteristics of Magnetic Tunnel Junction Stack Patterned with Nanometer Size for Magnetic Random Access Memory (자성 메모리의 적용을 위한 나노미터 크기로 패턴된 Magnetic Tunnel Junction의 식각 특성)

  • Park, Ik Hyun;Lee, Jang Woo;Chung, Chee Won
    • Applied Chemistry for Engineering
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    • v.16 no.6
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    • pp.853-856
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    • 2005
  • Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.

Effects of $O_2$ Gas Addition to Dry Etching of Platinum. Thin Film by Inductively Coupled Plasma (유도 결합 플라즈마를 이용한 백금 박막의 건식 식각시 가스 첨가 효과)

  • Kim, Nam-Hoon;Kim, Chang-Il;Kwon, Kwang-Ho;Chang, Eui-Goo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.6
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    • pp.451-455
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    • 1999
  • The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

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A study on Ultrashallow PN junction formation by boron implantation in Silicon (실리콘에 Boron 이온 주입에 의한 Ultrashallow PN접합 형성에 관한 연구)

  • 김동수;정원채
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.56-59
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    • 2000
  • In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

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A Dual Micro Gas Sensor Array with Nano Sized $SnO_2$ Thin Film (나노 박막을 이용한 듀얼 $SnO_2$ 마이크로 가스센서 어레이)

  • Chung Wan-Young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.9
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    • pp.1641-1647
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    • 2006
  • A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

Prevention of Nausea and Vomiting: Methods and Utility after Surgery in Cancer Patients?

  • Firoozabadi, Mehdi Dehghani;Rahmani, Hossein
    • Asian Pacific Journal of Cancer Prevention
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    • v.16 no.7
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    • pp.2629-2635
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    • 2015
  • Most cancer patients experience nausea and vomiting after surgery. Today, many methods of treatment have been developed and used for the control of such symptoms. The most important are drug therapy, relaxation, oxygen therapy and gas therapy. In addition, dexamethasone, massage therapy and using a Venturi mask have also proven effective. Due to the nature of gas consumption which leads to nausea it is recommended that use of N2O in the operating room be avoided or applied in combination with oxygen or other gases with fewer complications.