• Journal of Korean Ophthalmic Optics Society
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• v.13 no.4
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• pp.9-12
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• 2008

Purpose: Current gas-mask is very uncomfortable structure for spectacles wearer. Improving this problem can aid military men and firemen to protect themselves and rescue other person. Methods: we changed the structure from dual type of outward lens and inward lens into a single type structure. we attached acrylic frame to gas-mask instead of outward lens and protected the gas inflow by shutting the gab of lens and frame using silicon shield, and made the frame "S" style for removing astigmatism and maintaining of vertex distance. Results: It was possible to correct visual acuity and gas shield, and could changed the lens like a common spectacles. The new type of gas-mask spectacles could remove 0.53D~1.78D astigmatism occurred from the slant of eyesight and lens surface, 0.07D~0.66D overcorrection occurred from short vertex distance, and 0.1D~0.3D astigmatism occurred from pantoscopic angle. Conclusion: Because new type of gas-mask spectacles had clear visual field, it was expected to improve fighting power and rescue ability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.14-19
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• 1999

Using a single precursor of hexamethyldisilane $(Si_{2}(CH_{3})_{6})$, $\beta$-SiC film was successfully deposited on a Si substrate at $1100^{\circ}C$ by a chemical vapor deposition method. Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/$H_{2}$ gas system during the deposition. The schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

• Fire Science and Engineering
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• v.29 no.4
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• pp.57-60
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• 2015

The removal efficiencies by elastic fire gas mask of toxic gases CO, HCl, HCN, and $SO_2$ produced by a fire have a key role in saving lives. The elastic fire gas mask comprises a visible window, elastic hood, gas purification canister, and air vent. It does not have hair or neck thongs, which makes it easy to use and put on quickly. This research examined the removal efficiency of toxic gases by such a mask. The removal efficiencies for CO with a background concentration of 2505.0 ppm were 99.99 and 99.98% after 3.5 and 8.5 min, respectively. The residual CO concentration was drastically increased after 8.5 min. The removal efficiencies for HCl, HCN, and $SO_2$ with background concentrations of 1003.0, 399.0, and 100.3 ppm, respectively, were 100% after 20 min.

• Transactions of Materials Processing
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• v.11 no.8
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• pp.691-700
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• 2002

Injection molded plastic parts have many surface detects: weld line, sink mark, flow mark, gloss, shading, scratching, and so on. Because these surface faults have not been accepted esthetically, plastic parts are Produced through painting or texturing. The purpose of this paper is to develop a paintless molded part of TV Mask Front by flow control method and gas-assisted injection molding. In order to minimize defects from injection molding, this study was carried out using computer aided injection mold filling simulations using MF/FLOW and MF/GAS. Based on these numerical results, we developed FR(Flame Retardant) HIPS and established guidelines of part design, mold design, and Processing conditions. We have achieved of cost sayings, improvement of productivity, and utilization of recycling by eliminating surface defects and painting process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.233-233
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.164-168
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• 2011

Etch selectivities of mask materials to ZnO and $SnO_2$ films were studied in $BCl_3$/Ar and $CF_4$/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In $25BCl_3$/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7 ~ 17 for ZnO over Ni were produced in $25CF_4$/10Ar mixtures. $SnO_2$ showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for $SnO_2$ over Ni.

• Journal of the Korean Society of Safety
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• v.19 no.4 s.68
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• pp.48-54
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• 2004

The recent Ire incident in an elementary school of Chonan city causes the media focus on the fire safety of residential container buildings. In this study, real fire tests were conducted in this kind of buildings. Combustion products including $O_2,\; CO_2,\;CO,\;NOx,\;SOx,\;HCI,\;HCN$ were measured, and blood samples of lab rats were analyzed in terms of Co-Hb, Glucose, AST(GOT), ALT(GPT), in order to investigate the hazard-reduction effects of employing gas mask protected with filter during the fire emergency of residential container buildings. According to the test results, whether or not employing the filter showed a sheer difference in the toxicity of the fire-induced gases, and then the importance of wearing a gas mask was evidently demonstrated.

• Journal of the Korean Society of Safety
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• v.21 no.2 s.74
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• pp.35-45
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• 2006

Cobalt catalysts for gas mask loaded on various supports such as $Al_{2}O_{3},\;TiO_{2}$, AC(activated carbon) and $SiO_{2}$ were used to examine influences of calcination temperatures and reaction temperatures for CO oxidation. $Co(NO_{3})_2{\cdot}6H_{2}O$ was used as cobalt precursor and the catalysts were prepared by incipient wetness impregnation. The catalysts were characterized using XRD, TGA/DTA, TEM, $N_{2}$ sorption, and XPS. For the catalytic activity, support was in the order of ${\gamma}-Al_{2}O_{3}>TiO_{2}>SiO_{2}>AC\;and\;Al_{2}O_{3}$. The catalytic activity at lower temperature than $80^{\circ}C$ showed that with the increase of reaction temperature, cobalt catalysts on ${\gamma}-Al_{2}O_{3},\;TiO_{2},\;AC\$ has the negative activation energy but that of $SiO_{2}$ was positive.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.55-60
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• 1999

${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.