• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.924-928
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• 2010

In this study, $HfAlO_3$ thin films using gate insulator of MOSFET were etched in inductively coupled plasma. The etch characteristics of the $HfAlO_3$ thin films has been investigated by varying $O_2/BCl_3$/Ar gas mixing ratio, a RF power, a DC bias voltage and a process pressure. As the $O_2$ concentration increases further, $HfAlO_3$ was redeposited. As increasing RF power and DC bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas, as decreasing of the process pressure, etch rates of the $HfAlO_3$ thin films increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). These peaks moved a binding energy. This chemical shift indicates that there are chemical reactions between the $HfAlO_3$ thin films and radicals and the resulting etch by-products remain on the surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.497-501
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• 2010

Nano structure $Bi_2Te_3$ films were deposited on (100) GaAs substrates using a modified MOCVD system and the effect of growth parameters on the structural properties were investigated. Different from conventional MOCVD systems, our reactor consist of pressure control unit and two heating zones ; one for formation of nano-sized particles and the other for the growth of nano particles on substrates. By using this instrument we successfully grow $Bi_2Te_3$ films with nano-grain size. The film grown at high reactor pressure has large grain size. On the contrast, the grain size decreases with a decrease in pressure of the reactor. Here, we introduce new growth methods of nano-grain structured $Bi_2Te_3$ films for high thermoelectric figure of merit.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.5
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• pp.445-450
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• 2011

We studied the adhesion characteristics of polymer films (PC, PET, EVA) treated by atmospheric pressure plasma. The process parameters were the frequency, gas flow, and treatment time; we studied the effects of these parameters on the adhesion characteristics of the polymer materials. We used de-ionized water and diiodomethane as the polar and nonpolar solvents, respectively, for measuring the contact angles, and subsequently calculated the surface free energy of each polymer film. The adhesion characteristics were studied by carrying out a $180^{\circ}$ peel-off test. The polymer films treated with plasma developed a hydrophilic surface, which led to increased surface free energy and improved adhesion properties. From the results for contact angle, surface free energy, and adhesion strength, we obtained the optimal plasma-treatment conditions.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.619-619
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• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• Microbiology and Biotechnology Letters
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• v.27 no.6
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• pp.491-499
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• 1999

A great variety of the volatile metabolic by-products was formed in yeast cell during alcohol fermentation. The seibel grape (Vitis labrasca) which was grown in the Southern Korea used for wines. The objective of this research was to identify the volatile flavor compounds during alcohol fermentation and aging at 12$^{\circ}C$. saccharomyces cerevisiae and Schizosaccharomyces pombe were inoculated and fermented in seibel grape must. The volatile flavor compounds of logarithmic, stationary and death phases were extracted, concentrated and identified by gas chromatography/mass spectrometer (GC/MS). The volatile flavor compounds were determined by a Hewlett-Packard 5890 II Plus GC which was equipped with Supelcowax 10 fused silica capillary column (60m$\times$0.32mm$\times$0.25${\mu}{\textrm}{m}$ film thickness) wall coated with polyethyleneglycerol. The scan detection method allowed the comparison of the spectrum from the chromatogram of volatile flavor compounds to those in data Wileynbs base library. Among the volatile compounds collected by ether-hexane extraction method, the evolution of 20 main compounds, such as 9 esters (ethyl butyrate, isoamyl acetate, ethyl caproate, n-hexyl acetate, ethl caprylate, ethyl caprate, diethy succinate, ethyl hexadecanoate, 2-pheneethyl acetate), 4 alcohols (3-methyl-1-butanol, 1-hexanol, 1-heptanol, benzoethanol), 4 ketones and acids (2-octanone, caproic acid, caprylic acid, capric acid), 2 furan and phenol (2,6-bis(1,1-dimethyl ethyl)phenol, 2,3-dihydrobenzofuran) were observed during alcohol fermentation and aging. The production of the esters during alcohol fermentation with S. cerevisiae was higher than those of Sch. pombe. The sensory scores of the aged wine samples in aroma, taste and overall acceptability were not significantly different(p<0.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.68-71
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• 2006

Multi-component $ZnO-In_2O_3-SnO_2$ thin films have been prepared by RF magnetron co-sputtering using targets composed of $In_3Sn_4O_{12}$(99.99%) [1] and ZnO(99.99%) at room temperature. $In_3Sn_4O_{12}$ contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / (RFI + RF2)] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied $0{\sim}100W$ respectively. The thickness of the films was $350{\sim}650nm$. The composit ion concentrations of the each film were measured with EPMA, AES and XPS. The low resistivity of $1-2\;{\times}\;10^3$ and an average transmittance above 80% in the visible range were attained for the films over a range of ${\delta}\;(0.3\;{\leq}\;{\delta}\;{\leq}\;0.5)$. The films also showed a high chemical stability with time and a good uniformity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.62.2-62.2
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• 2011

산업화 이후, 석탄 석유를 중심으로 한 화석연료가 이산화탄소를 대량으로 배출하며 지구 온난화를 야기함에 따라, 기존의 화석연료를 대체할 청정하고 무한 재생 가능한 대체에너지로 가장 큰 기대를 받고 있는 것은 태양에너지이며, 이에 보조를 맞춰 태양광발전에 대한 연구개발이 국내외적으로 활발히 진행되고 있는 실정이다. 태양 전지는 빛 에너지를 직접 전기 에너지로 바꿔주는 소자로, 셀의 효율을 높이기 위해서는 최대한 많은 빛을 흡수시킬 수 있는 것이 중요하다. 빛의 반사를 줄이는 방법에는 texturing과 antireflecting coating이 있다. Antireflecting coating은 반도체와 공기의 중간 굴절율을 갖는 박막을 증착하여 측면 반사를 감소시킴으로서 빛의 손실을 감소시키는 역할을 한다. 과거에 반사방지막으로 가장 많이 사용되었던 물질은 SiO로써 굴절률은 1.8~1.9로서 최소의 반사율은 1% 미만이지만, 가시광선영역에서의 흡수에 의한 손실이 생기므로, SiNx가 대체 물질로 제안되었다. SiNx의 경우 굴절률이 약 1.5로서 Si에 쉽게 형성시킬 수 있고, texturing된 Si 표면에 적합하며 반사율을 10%에서 2%로 줄일 수 있는 장점을 가지고 있다. 따라서 본 연구에서는 high power, high frequency PECVD 방법으로 $SiH_4$와 $NH_3$ gas의 비율, $N_2$ carrier gas 등 공정 변수를 변화시켜 증착한 SiNx 박막의 결정학적 특성을 X-ray diffraction 분석과 XPS (X-ray photoelectron spectroscopy)를 통해 화학적 결합을 확인하였고, 이를 FT-IR (Fourier Transform-Infrared spectroscopy)를 통해 관찰한 결과와 연관시켜 분석하였다. 굴절율의 경우 ellipsometer를 이용하여 측정하였으며 위의 측정을 통하여 SiNx박막의 반사 방지막으로써의 가능성을 확인 하였다.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.494-499
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• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.7
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• pp.73-82
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• 1989

We developed a photo-CVD equipment for the deposition of silicon based insulating materials. Silicon dioxide thin films were deposited at various process conditions especially low temperature range $50-250^{\circ}C$. Low pressure mercury lamp was used in the direct excitation of $SiH_4/N_2O$ mixture gas without mercury sensitization. AES and ESCA analysis showed that oxygen to silicon atomic ratio and binding state of Si-O bond was nearly 2.0 and $SiO_2$ type, respectively. The refractive indices were measured to be 1.39-1.44, indicating that films were in relatively low density.