• 제목/요약/키워드: gallium

검색결과 592건 처리시간 0.035초

제강더스트로부터 갈륨의 회수 (Recovery of Gallium from Steelmaking Dust)

  • 양종규;이성식;김종화;황영길
    • 자원리싸이클링
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    • 제2권4호
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    • pp.27-32
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    • 1993
  • 제강더스트 중에 미량으로 함유되어 있는 갈륨을 분리 회수하는 프로세스를 연구하였다. 2.25mol/l-$H_2SO_4$ 침출에의하여 38mg/l의 갈륨을 함유하는 수용액을 얻었다. 이 침출액 중에서 1000배 량의 철과 아연이 함유되어 있다. 침출액 중의 갈륨은 철(III)이온을 철(II)이온으로 환원하고, pH 조정한 후, 아미노카르본산형 관능기를 가진 킬레이트 수지를 이용하여 흡착 농축하였다. 1.5mol/l-$H_2SO_4$에 의한 용리액을 칼럼에 재공급하고 재농축하여, 3.0mol/l-HCl을 이용하여 용리하였다. 용리액 중의 갈륨은 13g/l의 농도를 나타내었다. 갈륨의 정제는 용매추출법에 의하여 정제하였다. 추출제로는 TOMAC(tri-n-octhylmethylammonium chloride)을 사용하여 순수한 갈륨 정제액을 얻었다.

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Gallium Nitride Nanoparticle Synthesis Using Non-thermal Plasma with N2 Gas

  • 유광호;김정형;유신재;류현;성대진;신용현;장홍영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.236.1-236.1
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    • 2014
  • Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

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Molecular Orbital Calculations for the Formation of GaN Layers on Ultra-thin AlN/6H-SiC Surface Using Alternating Pulsative Supply of Gaseous Trimethyl Gallium (TMG) and NH$_3$

  • 성시열;황진수
    • Bulletin of the Korean Chemical Society
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    • 제22권2호
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    • pp.154-158
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    • 2001
  • The steps for the generation of very thin GaN films on ultrathin AlN/6H-SiC surface by alternating a pulsative supply (APS) of trimethyl gallium and NH3 gases have been examined by ASED-MO calculations. We postulate that the gallium cul ster was formed with the evaporation of CH4 gases via the decomposition of trimethyl gallium (TMG), dimethyl gallium (DMG), and monomethyl galluim (MMG). During the injection of NH3 gas into the reactor, the atomic hydrogens were produced from the thermal decomposition of NH3 molecule. These hydrogen gases activated the Ga-C bond cleavage. An energetically stable GaN nucleation site was formed via nitrogen incorporation into the layer of gallium cluster. The nitrogen atoms produced from the thermal degradation of NH3 were expected to incorporate into the edge of the gallium cluster since the galliums bind weakly to each other (0.19 eV). The structure was stabilized by 2.08 eV, as an adsorbed N atom incorporated into a tetrahedral site of the Ga cluster. This suggests that the adhesion of the initial layer can be reinforced by the incorporation of nitrogen atom through the formation of large grain boundary GaN crystals at the early stage of GaN film growth.

Fabrication of Gallium Phosphide Tapered Nanostructures on Selective Surfaces

  • Song, Young Min;Park, Hyun Gi
    • Applied Science and Convergence Technology
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    • 제23권5호
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    • pp.284-288
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    • 2014
  • We present tapered nanostructures fabricated on a selective area of gallium phosphide substrates for advanced optoelectronic device applications. A lithography-free fabrication process was accomplished by dry etching of metal nanoparticles. Thermal dewetting of micro-patterned metal thin films provides etch masks for tapered nanostructures. This simple process also allows the formation of plasmonic surfaces with corrugated shapes. Rigorous coupled-wave analysis calculations provide design guidelines for tapered nanostructures on gallium phosphide substrates.

갈륨합금과 고동 아말감 합금의 물리적 성질 비교 (COMPARISON OF THE PHYSICAL PROPERTIES BETWEEN GALLIUM ALLOY AND HIGH COPPER AMALGAM ALLOYS)

  • 김현철;이희주;허복
    • Restorative Dentistry and Endodontics
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    • 제23권1호
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    • pp.278-287
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    • 1998
  • The purpose of this study was to compare the physical properties between high copper amalgam and gallium restorative material. In this study, the specimens for the 4 experimatal groups (Valiant, Valiant PhD, Gallium Alloy GF II. Gallium Alloy GF II triturated with some addition of alcohol) were prepared in the manner of which stated in ADA specification No.1 for amalgam alloy. And then, measured and compared the value of compressive strength. creep, and dimensional change during hardening of each sample. The results were as follows: 1. In the compressive strength, the Valiant-lathe cut type high copper amalgam-had the highest value of strength(p<0.05), and the Valiant PhD-admixed type high copper amalgam-showed the higher value of strength than the Gallium Alloy GF II(p<0.05) but had no significant difference with Gallium Alloy GF II triturated with some addition of alcohol(p>0.05). 2. In the creep. the Valiant PhD showed the highest value of creep (p<0.05), but there was no significant difference between Gallium Alloy GF II and Valiant(p>0.05). 3. In the dimensional change during hardening, no two groups were significantly different at the 0.050 level. 4. There was no significant difference between Gallium Alloy GF II and the same material which was triturated with some addition of alcohol(p>0.05).

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액체 금속 이온원의 빔 안정도 향상 (Beam stability improvement of a liquid metal ion source)

  • 현정우;임연찬;김성수;박철우;이종항;강승언
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.504-507
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    • 2004
  • Previous studies on the liquid Gallium ion sources used an electro-chemically etched tungsten wire with a coil-type heater. Such a structure requires excessive power consumption in the course of heating the liquid metal. In this work, a new structure is proposed that replaces the coil-type heater. It uses a Gallium reservoir made of six pre-etched 250 $\mu\textrm{m}$ tungsten wires that surround the needle electrode. Gallium loading at the reservoir is observed to be much more stable, resulting in an improved beam stability.

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갈륨 신티그라피와 자기공명영상으로 진단한 근육 유육종증 (A Case of Muscular Sarcoidosis diagnosed by Gallium-67 Scintigraphy and Magnetic Resonance Imaging)

  • 손형선;김의녕
    • 대한핵의학회지
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    • 제33권6호
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    • pp.543-547
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    • 1999
  • Gallium-67 scintigraphy is helpful in the assessment of active extrapulmonary sarcoidosis. Muscular involvement of sarcoidosis is often asymptomatic or nonspecific, and laboratory examinations do not provide convincing evidence of muscular involvement We report a case of muscular sarcoidosis, which was detected by gallium-67 scintigraphy. In a patient who was suffering from fever and arthralgia of knee joint, gallium-67 scintigraphy showed mediastinal and hilar involvement of sarcoidosis with unexpected extensive muscular uptake. Magenetic resonance imaging revealed the detailed depiction of intramuscular infiltration of sarcoid granuloma. Gallium-67 scintigraphy is useful in detecting inflammatory muscular involvement of sarcoidosis as well as other multiorgan involvement.

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Quality evaluation of diamond wire-sawn gallium-doped silicon wafers

  • Lee, Kyoung Hee
    • 한국결정성장학회지
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    • 제23권3호
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    • pp.119-123
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    • 2013
  • Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

White Light Generation from Single Gallium Oxide Nanoparticles co-doped with Rare-Earth Metals

  • Patil, Prashant;Park, Jinsung;Lee, Seung Yong;Park, Jong-Ku;Cho, So-Hye
    • Applied Science and Convergence Technology
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    • 제23권5호
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    • pp.296-300
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    • 2014
  • The synthesis of pure and rare-earth doped gallium oxide (${\beta}-Ga_2O_3$) nanoparticles is reported. The synthesized nanoparticles are characterized with XRD, TEM, and PL analyses. Strong blue emission is observed from un-doped gallium oxide nanoparticles, while nanoparticles doped with $Eu^{3+}$ and $Tb^{3+}$ give strong red and green emissions, respectively. When doped with $Eu^{3+}$ and $Tb^{3+}$ together, gallium oxide nanoparticles emit white light. The CIE coordinate of the emitted light was found to be (0.33, 0.33), which is well within the white light region.