• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.131.2-131
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• 2003

• Journal of the Korean Chemical Society
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• v.35 no.5
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• pp.480-486
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• 1991

The solubilities of ethyl bromide in aniline and o-chloroaniline have been measured at 5, 15$^{\circ}$ and 25$^{\circ}$C in the presence and the absence of gallium bromide. When gallium bromide does not exist in the system, the solubility of ethyl bromide in o-chloroaniline is greater than in aniline, indicating a stronger interaction of ethyl bromide with o-chloroaniline than that with aniline. It could be thought that ethyl bromide forms unstable complex with gallium bromide in the presence of gallium bromide in the system. This complex has been assumed in various ways and evaluated, that instability constant (K value) is relatively constancy under the assumption of 1 : 1 complex, $C_2H_5Br{\cdot}GaBr_3$. Therefore, the complex forms the following equilibrium in the solution: $C_2H_5Br{\cdot}GaBr_3\;{\rightleftharpoons}\;C_2H_5Br +1/2Ga_2Br_6$ The instability of the complex of ethyl bromide with gallium bromide is compared with similar complexes of gallium bromide with methyl bromide. The changes of enthalpy, free energy and entropy fcor the dissociation of the complex are also calculated.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.32-37
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• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.163-168
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• 2014

Bottom gate thin-film transistors were fabricated using solution processed IGZO channel layers with various gallium composition ratios that were annealed on a hot plate. Increasing the gallium ratio from 0.1 to 0.6 induced a threshold voltage shift in the electrical characteristics, whereas the molar ratio of In:Zn was fixed to 1:1. Among the devices, the IGZO-TFTs with gallium ratios of 0.4 and 0.5 exhibited suitable switching characteristics with low off-current and low SS values. The IGZO-TFTs prepared from IGZO films with a gallium ratio of 0.4 showed a mobility, on/off current ratio, threshold voltage, and subthreshold swing value of $0.1135cm^2/V{\cdot}s$, ${\sim}10^6$, 0.8 V, and 0.69 V/dec, respectively. IGZO-TFTs annealed at $300^{\circ}C$, $350^{\circ}C$, and $400^{\circ}C$ were also fabricated. Annealing at lower temperatures induced a positive shift in the threshold voltage and produced inferior electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.248.2-248.2
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• 2014

In this study, the optical properties and structural characteristics of gallium nitride (GaN) thin films prepared by radio frequency (RF) magnetron sputtering were investigated. Auger electron and X-ray photoelectron spectra showed that the deposited films consisted mainly of gallium and nitrogen. The presence of oxygen was also observed. The optical bandgap of the GaN films was measured to be approximately 3.31 eV. The value of the refractive index of the GaN films was found to be 2.36 at a wavelength of 633 nm. X-ray diffraction data revealed that the crystalline phase of the deposited GaN films changed from wurtzite to zinc-blende phase upon decreasing the sputtering gas pressure. Along with the phase change, a strong dependence of the microstructure of the GaN films on the sputtering gas pressure was also observed. The microstructure of the GaN films changed from a voided columnar structure having a rough surface to an extremely condensed structure with a very smooth surface morphology as the sputtering gas pressure was reduced. The relationship between the phase and microstructure changes in the GaN films will be discussed.

• The Korean Journal of Nuclear Medicine
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• v.35 no.4
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• pp.280-285
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• 2001

We present a case of a 31 year-old male patient with tuberculous pericarditis with mediastinal mass that showed increased uptake on Gallium-67 image. Gallium-67 scan was performed to evaluate the activity of the superior mediastinal mass, which was detected on chest CT. A rim of intense activity around the heart was observed, but increased uptake was not seen in the mediastinum. However, on maximal contrast-enhanced SPECT images, a small focus of faint uptake was observed in the superior mediastinum. This finding implied that there was an active tuberculosis in the pericardium and inflammation in the superior mediastinal mass. This case demonstrated that Gallium-67 scinitigraphy was helpful for the diagnosis of tuberculous pericarditis.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.182-188
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• 2004

Previous studies on the liquid Gallium ion sources used an electro-chemically etched tungsten wire with a coil-type heater. Such a structure requires excessive power consumption in the course of heating the liquid metal. In this work, a new structure is proposed that replaces the coil-type heater. It uses a Gallium reservoir made of six pre-etched 250$\mu\textrm{m}$ tungsten wires that surround the needle electrode. Gallium trading at the reservoir is observed to be much more stable, resulting in an improved beam stability.

• Journal of the Korean Chemical Society
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• v.38 no.3
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• pp.208-213
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• 1994

The solubility of i-butyl bromide in nitrobenzene have been measured at 19, 25 and $40^{\circ}C$ in the presence and absence of gallium bromide. In the presence of gallium bromide, 1 : 1 complex, $i-C_4H_9Br{\cdot}GaBr_3$ is formed in the solution. The instability constant K of the complex formation was evaluated from the following equilibrium equation. $i-C_4H_9Br{\cdot}GaBr_3{\rightleftharpoons}C_4H_9Br + 1/2Ga_2Br_6.$ From these result, it seems that the stabilities of the complex formation, gallium bromide with alkyl bromide, are directly related with those of the carbonium ions of alkyl bromide.

• Journal of the Korean Chemical Society
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• v.6 no.1
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• pp.77-83
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• 1962

The solubilities of hydrogen bromide and methyl bromide in nitrobenzene and in 1,2,4-trichlorobenzene have been measured in the presence and absence of gallium bromide. When gallium bromide does not exist in the system, the solubilities of HBr and MeBr in nitrobenzene are greater than in 1,2,4-trichlorobenzene, indicating the greater basicity of nitrobenzene than 1,2,4-trichlorobenzene. When there exists gallium bromide in the system, the addition compounds, GaBr3·HBr and GaBr3·CH3Br, have been found to exist in solution. The addition compound of GaBr3·HBr is stable in nitrobenzene but unstable in 1,2,4-trichlorobenzene. On the other hand the addition compound of $GaBr_3{\cdot}CH_3Br$ is unstable in both solvents. All of these unstable addition compounds dissociate into components to large extents according to one of the following equilibria or both: $$GaBr_3{\cdot}RBr{\leftrightarrows}GaBr_3+RBr\;GaBr_3{\cdot}RBr{\leftrightarrows}1}2\;Ga_2Br_6+RBr$.$ where R denotes either hydrogen atom or methyl group.

• Bulletin of the Korean Chemical Society
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• v.28 no.1
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• pp.17-28
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• 2007

Indium and gallium have emerged as useful metals in organic synthesis as a result of its intriguing chemical properties of reactivity, selectivity, and low toxicity. Although indium belongs to a main metal in group 13, its first ionization potential energy is very low and stable in H2O and O2. Therefore, indium-mediated organic reactions are of our current interest. On the basis of these properties of indium, many efficient indium-mediated organic reactions have been recently developed, such as the addition reactions of allylindium to carbonyl and iminium groups, the indium-mediated synthesis of 2-(2-hydroxyethyl)homoallenylsilanes, the indiummediated allylation of keto esters with allyl halides, sonochemical Reformatsky reaction using indium, the indium-mediated selective introduction of allenyl and propargyl groups at C-4 position of 2-azetidinones, the indium-mediated Michael addition and Hosomi-Sakurai reactions, the indium-mediated β-allylation, β- propargylation and β-allenylation onto α,β-unsaturated ketones, the highly efficient 1,4-addition of 1,3-diesters to conjugated enones by indium and TMSCl, and the intramolecular carboindation reactions. Also, we found gallium-mediated organic reactions such as addition reactions of propargylgallium to carbonyl group and regioselective allylgallation of terminal alkynes.