• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.1
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• pp.9-14
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• 2005

Mode missing of Fabry-Perot laser diodes has been modeled using the time domain laser model(TDLM). Fabry-Perot laser diodes that have structure of ripple in the waveguide of active layer or defects inside the active layer were simulated. For accurate simulation, the nonlinear effects were included such as spatial hole burning(SHB) and gain saturation. From the simulation results, it was founded that the defect inside the active layer in laser diodes has a strong influence on mode missing rather than the waveguide ripple. The simulation results are confirmed with the fabricated Fabry-Perot laser diodes by measuring the longitudinal mode spectra as a function of temperature from $25[^{\circ}C]\;to\;85[^{\circ}C]$.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.9
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• pp.4205-4227
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• 2018

Network Coding (NC) is an approach recently investigated for increasing the network throughput and thus enhancing the performance of wireless mesh networks. The benefits of NC can further be improved when routing decisions are made with the awareness of coding capabilities and opportunities. Typically, the goal of such routing is to find and exploit routes with new coding opportunities and thus further increase the network throughput. As shown in this paper, in case of proactive routing the coding awareness along with the information of the measured traffic coding success can also be efficiently used to support the congestion avoidance and enable more encoded packets, thus indirectly further increasing the network throughput. To this end, a new proactive routing procedure called Congestion-Avoidance Network Coding-Aware Routing (CANCAR) is proposed. It detects the currently most highly-loaded node and prevents it from saturation by diverting some of the least coded traffic flows to alternative routes, thus achieving even higher coding gain by the remaining well-coded traffic flows on the node. The simulation results confirm that the proposed proactive routing procedure combined with the well-known COPE NC avoids network congestion and provides higher coding gains, thus achieving significantly higher throughput and enabling higher traffic loads both in a representative regular network topology as well as in two synthetically generated random network topologies.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.9
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• pp.366-372
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• 2003

Multilevel coded modulation (MCM) with serial concatenated convolutional code (SCCC) is proposed and the performance is analyzed in this paper. Both high coding gain and bandwidth efficiency can be obtained if SCCC is adopted as a component code at the first level of MCM. Simulation results show that the performance of MCM with Ambroze's SCCC is saturated like that of MCM with PCCC. But MCM with Benedetto's SCCC shows no performance saturation and better performance than MCM with PCCC or Ambroze's SCCC. Thus MCM with Benedetto's SCCC may be a good choice for high quality system with limited bandwidth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• Korean Journal of Optics and Photonics
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• v.3 no.1
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• pp.67-72
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• 1992

Since the inception of the idea to develop an X-ray laser in 1960's, a rapid progress to demonstrate soft X-ray lasers in the wavelength region below 300$\AA$ has been made during the last ten years. Among many prospective proposals, the recombination scheme and the collisional exitation scheme have been most successful in achieving a significant gain. An appreciable single-pass amplification was achieved at 182 $\AA$ from CVI ions using the recombination scheme and at 206 and 290$\AA$ from the Se XXV ions using the collisional excitation scheme. The current research on X-ray lasers emphasizes the enhancement of amplification upto saturation and the extension of operating wavelength to shorter wavelengths, especially to the water window region between 23 and 44 $\AA$. X-ray lasers are expected to open many application fields, such as X-ray laser microscopy, X-ray holography, X-ray lithography, and more, in the near future.

• Geomechanics and Engineering
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• v.30 no.2
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• pp.211-218
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• 2022

This study characterizes Proctor and geophysical properties in a broad range of grading and fines contents. The results show that soil index properties such as uniformity and fines plasticity control the optimum water content and peak dry unit trends, as well as elastic wave velocity. The capillary pressure at a degree of saturation less than S = 20% plays a critical role in determining the shear wave velocity for poorly graded sandy soils. The reduction in electrical resistivity with a higher water content becomes pronounced as the water phase is connected A parallel set of compaction and geophysical properties of sand-kaolinite mixtures reveal that the threshold boundaries computed from soil index properties adequately capture the transitions from sand-controlled to kaolinite-controlled behavior. In the transitional fines fraction zone between F_F ≈ 20 and 40%, either sand or kaolinite or both sand and kaolinite could dominate the geophysical properties and all other properties associated with soil compaction behavior. Overall, the compaction and geophysical data gathered in this study can be used to gain a first-order approximation of the degree of compaction in the field and produce degree of compaction maps as a function of water content and fines fraction.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.11
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• pp.21-27
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• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.13-22
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• 2004

This paper drives the exact expression of bit error rate(BER) performance for successive interference cancellation(SIC) algorithm against multipath interference components in a high-speed downlink packet access(HSDPA) system of W-CDMA downlink and the BER performance is evaluated by numerical analysis. Numerical results showed that the average BER performance is rapidly saturated in terms of increasing the number of multipath and is revealed significant improvement for improvement Processing gain(PG). For example, the average BER Performance of the SIC algorithm is superior to the performance of conventional scheme by more than 7dB and 1.4dB for processing gain PG=54 and 128 under the two-path channel and average BER=$1.0{\times}10^{-3}$, respectively. This results also indicated that the average BER saturation is occurred at nearly one weight factor which is assigned to pilot and data channels. Likewise, the average BER performance is greatly degraded due to increasing the interference power in proportional to the number of multipath with increasing multicode K. And the smaller multipath fading channel gain is arrived later, the more the average BER performance is improved. The results of performance analysis in this paper indicated that the multipath interference cancellation is required to improve the BER performance in a HSDPA system under multicode for high-speed packet transmission, low spreading factor, and multipath fading channel.

• Journal of electromagnetic engineering and science
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• v.1 no.1
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• pp.73-77
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• 2001

We studied the fabrication of GaAs-based pseudomorphic high electron mobility transistors(PHEMT`s) for the purpose of millimeter- wave applications. To fabricate the high performance GaAs-based PHEMT`s, we performed the simulation to analyze the designed epitaxial-structures. Each unit processes, such as 0.1 m$\mu$$\Gamma$-gate lithography, silicon nitride passivation and air-bridge process were developed to achieve high performance device characteristics. The DC characteristics of the PHEMT`s were measured at a 70 $\mu$m unit gate width of 2 gate fingers, and showed a good pinch-off property ($V_p$= -1.75 V) and a drain-source saturation current density ($I_{dss}$) of 450 mA/mm. Maximum extrinsic transconductance $(g_m)$ was 363.6 mS/mm at $V_{gs}$ = -0.7 V, $V_{ds}$ = 1.5 V, and $I_{ds}$ =0.5 $I_{dss}$. The RF measurements were performed in the frequency range of 1.0~50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.7 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain (MSG) and 3.2 dB of $S_{21}$ gain were obtained, respectively. A current gain cut-off frequency $(f_T)$ of 106 GHz and a maximum frequency of oscillation $(f_{max})$ of 160 GHz were achieved from the fabricated PHEMT\\`s of 0.1 m$\mu$ gate length.h.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.12
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• pp.3626-3631
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• 2009

This study has provided some of the first experimental results of NMOSFET hot-carrier degradation for the analog circuit application. After hot-carrier stress under the whole range of gate voltage, the degradation of NMOSFET characteristics is measured in saturation region. In addition to interface states, the evidences of hole and electron traps are found near drain depending on the biased gate voltage, which is believed to the cause for the variation of the transconductance($g_m$) and the output conductance($g_{ds}$). And it is found that hole trap is a dominant mechanism of device degradation in a low-gate voltage saturation region, The parameter degradation is sensitive to the channel length of devices. As the channel length is shortened, the influence of hole trap on the channel conductance is increased. Because the magnitude of $g_m$ and $g_{ds}$ are increased or decreased depending on analog operation conditions and analog device structures, careful transistor design including the level of the biased gate voltage and the channel length is therefore required for optimal voltage gain ($A_V=g_m/g_{ds}$) in analog circuit.