• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.5
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• pp.539-544
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• 2002

The purpose of this study is to examine the change of full width half maximum(FWHM) and residual stress during fatigue process in S45C Steel, by X-ray diffraction. For S45C Steel, the relationship between the change in fatigue damage of the specimen and the FWHM, and residual stress of X-ray diffraction profiles during the fatigue processes has been investigated. The FWHM decreases in the early period of fatigue cycle. The change of FWHM is associated with cyclic work hardening. The change of the FWHM is not significant in $10{\sim}20%$ of ratio of fatigue life. The residual stress is changed with fatigue cycle increasing during the fatigue pro process.

• Composites Research
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• v.34 no.3
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• pp.143-147
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• 2021

Full width half maximum (FWHM) analysis of superimposed terahertz (THz) signals in the glass fiber reinforced polymer (GFRP) was studied to detect fine delamination inside GFRP. The THz signals were measured for each fine delamination size inside the GFRP using the reflection mode of the terahertz time domain spectroscopy (THz-TDS) system. Then, the FWHM of the superimposed THz signal reflected at the fine delamination was extracted. Thereafter, the complex refractive index of the GFRP was measured using transmission mode of the THzTDS system. Based on this, the FWHM of the superimposed THz signal at the fine delamination were calculated and compared with respect to the fine delamination size. From the theoretically calculated superimposed signals, the relationship between the fine delamination size and the FWHM in the superimposed THz signal was derived. Consequently, the fine delamination size could be predicted through the analysis of the FWHM extracted from the THz signal at the fine delamination.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.105-109
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• 2017

AlN single crystal was thermally treated at $1200^{\circ}C$ and $1500^{\circ}C$ in the ambient gas of nitrogen. AlN single crystal was obtained by sublimation growth process using by a facility having a growth part which was heated by RF (Radio Frequency) induction heating. In this report, the optical microscopic results taken from thermally treated AlN single crystal and FWHM (Full width of half maximum) measured by DCXRD (Double crystal X-ray Diffractometry) were reported.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.82-85
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by DCXD(Double Crystal X-ray Diffraction). The sample quality of crystalline sapphire wafer at surface has a FWHM(Full Width at Half Maximum) of 250 arcsec. This value at the sapphire wafer surfaces indicated 0.12${\mu}{\textrm}{m}$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Also Surfaces roughness of sapphire wafers were measured 2.1 by AFM(Atom Force Microscope).

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.319-323
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• 2002

1.55 ${\mu}m$multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factors ($\alpha{-factor}$) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width at half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes for which the value of the $\alpha{-factor}$ was small. As injection current increased, the FWHM of the far-field also increased regardless of the a-factor. This phenomenon was explained by reduction of filament spacing as injection current increased.

• Korean Journal of Optics and Photonics
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• v.11 no.4
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• pp.279-288
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• 2000

The variations of output energy due to tilt output coupler for different types of pulsed Nd:YAG laser resonators were compared by measuring FWHM (full width at half maximum) which means the width of angle displacement where maximum output energy decreases to half value. We proposed a new configuration of pulsed solid-state laser resonator which had high FWHM for tilting of output coupler and which was little sensitive for tilting of rear optics. We proved that our laser resonator had high alignment stability using ABeD ray matrix method because the ray matrix of such a resonator corresponded to unit matrix. atrix.

• Bulletin of the Korean Chemical Society
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• v.22 no.8
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• pp.807-815
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• 2001

Two-dimensional (2D) correlation method, which generates the synchronous and the asynchronous 2D spectrum by complex cross correlation of the Fourier transformed spectra, is an analysis method for the changes of the sample spectrum induced by vari ous perturbations. In the present work, the 2D electronic correlation spectra have been simulated for the cases where the sample spectrum composed of two gaussian bands changes linearly. When only the band amplitudes of the sample spectrum change, the synchronous spectrum shows strong peaks at the band centers of the sample spectrum, but the asynchronous spectrum does not make peaks. When the sample spectrum shifts without changing intensity and width, the synchronous spectrum shows peaks around the initial and final positions of the band maximum and the asynchronous spectrum shows long peaks spanning the shifting range. The band width change produces the complex 2D correlation spectra. When the sample spectrum shifts with band broadening, the width change by 50% of full width at half maximum (FWHM) does not give so large an effect on the correlation spectrum as the spectral shift by one half of FWHM of the sample spectrum.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.936-944
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• 1995

The effects of Spinodal decomposition induced phase separated microstructure of InGaAsP/InP heterostructure on photoluminescence(PL) intensity and FWHM(full-width at half maximum) were investigated in this study. Lattice mismatches were measured by double crystal x-ray diffractometer, and the microstructures of phase separated InGaAsP were observed by transmission electron microscopy. It was found that the misfit stress calculated from lattice mismatch was related to the periodicity of Spinodal modulation. Strong dependence of PL intensity and FWHM on the modulation periodicity was also found. For systematic understanding of these observations, the interaction elastic strain energy function induced by misfit stress was proposed. The calculation illustrated that the microstructure of the epilayer such as Spinodal decomposition played an important role in determining the optoelectronic properties such as PL intensity and PL FWHM.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.97-102
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• 2002

Highly-oriented ZnO thin films has been successfully deposited on Si(100) by metal organic chemical vapor deposition(MOCVD) at $250^{\circ}C$~$400^{\circ}C$ We report on the structural properties of ZnO thin film at various temperatures and at various ratios of the he and $O_2$ gas flow rates. The crystallinity of the thin films was improved and the surface smoothness decreased with the increase of the growth temperature. In x-ray diffraction analysis with respect to ZnO(0002) peak, the full width at half maximum (FWHM) of $0.4^{\circ}$ was achieved at $400^{\circ}C$.