• Ceramist
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• v.10 no.3
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• pp.7-14
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• 2007

PbS QDs in glasses have attracted much attention due to the potentials for near-infrared applications. Growth of PbS QDs in the glass is discussed and size of PbS QDs formed in the glass can be tuned by varying the thermal treatment conditions. Hyperbolic-band approximation and four-band envelope function provide good simulation of the exciton energies of PbS QDs. Absorption and photoluminescence of PbS QDs was tuned into $1{\sim}2{\mu}m$ wave-length regime with large full width at half maximum photoluminescence intensity (>160 nm). Photoluminescence intensity of PbS QDs in the glasses was closely related to size of quantum dots, temperature, excitation and defects. Decrease in temperature shifted the photoluminescence bands to shorter wavelength and switched the photoluminescence from darkened state and brightened state.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.470-475
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• 1999

ZnS and ZnTe epilayers were grown on GaAs(100) GaP(100) substrates by hot-wall eitaxy. X-ray diffraction revealed that the epilayers have zinc-blende structure and were grown in (100) direction. The small values of the full width at half maximum (FWHM) of double crystal rocking curve (DCRC) showed high quality of the epilayers. From the thickness dependence of the FWHM of DCRC, the strain remaining in films is found to be due to the thermal expansion difference as well as due to the lattice mismatch.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.174-177
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• 2018

ZnO/Ag/ZnO multilayers were fabricated and their optical properties were investigated in terms of the micro-cavity effect in electroluminescent devices based on colloidal quantum dots. The top and bottom ZnO layers were formed by a sol-gel method while the middle Ag layer was deposited by thermal evaporation. After the fabrication of the ZnO/Ag/ZnO structure, the transmittance increased to 74%. When the oxide/metal/oxide multilayers were applied to quantum dot light-emitting diodes, the color purity was enhanced due to the narrower full width at half maximum.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.408-413
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• 1995

We investigated the effect of mechanical backside damage upon minority carrier recombination lifetime measurement in Czochralski silicon substrate by laser excitation/microwave reflection photoconductance decay method. The intensity of mechanical damage was evaluated by X-ray double crystal rocking curve, X-ray section topography and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the threshold full width at half maximum value which affect minority carrier lifetime measurement is about 13 secs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.634-639
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• 2002

Using laser ablation technique carbon thin films were deposited on Si(100) substrate as a function of substrate temperature. In this study, the surface morphologic, structural and field emission properties of these carbon thin films were investigated using Raman spectroscopy, scanning electron microscopy, and a diode technique, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover, the intensity of D-band and the full width at half maximum of these bands were dependent on substrate temperatures. As the substrate temperature was increased, the field emission properties were improved. As the result, we find that the field emission properties of the films were changed significantly with the substrate temperature and structural features of carbon than films.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.368-370
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• 1999

Using DC faced target sputtering method we grow AIN the films on the $Al_2O_3$(0001) substrate with varying thickness(17$\AA$-1000$\AA$). We measured x-ray diffraction(XRD) profiles by synchrotron radiation($\lambda$=1.12839 $\AA$) with four circle diffractometer. The full width half maximum(FWHM) of rocking curve for the AIN (0002) diffraction of the film grown at $500^{\circ}C$ was $0.029^{\circ}$. Also, we confirmed that the stress between AIN thin film and $Al_2O_3$(0001) substrate was reduced as increasing AIN film thickness, and the critical thickness of 400~500 $\AA$, defined as a lattice constant in the film agrees with that in a bulk without stress, was obtained.

• Journal of Sensor Science and Technology
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• v.14 no.6
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• pp.369-373
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• 2005

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of (111) surfaces of CdTe etched by Nakagawa solution was observed the (111)A compesed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on (111)A, we observed free exciton ($E_{x}$) existing only high quality crystal and neutal acceptor bound exciton ($A^{0}$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an activation enery of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.42-45
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• 2004

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111}surfaces of CdTe etched by Nakagawa solution was observed the {111} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on {111}A, we observed free exciton($E_x$) existing only higy quality crystal and neytral acceptor bound exciton($A^0$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an actibation energy of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.