• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.107-114
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• 2022

The effects of ring radius and coupling spacing on the free spectral range (FSR), full width at half maximum (FWHM), quality factor, and sensitivity of single-channel and add-drop channel slot ring resonators were systematically investigated using FIMMPROP and PICWAVE numerical software. The single-channel ring resonator exhibited better characteristics, namely, a wider FSR and narrower FWHM compared with the add-drop structure; thus, it was evaluated to be more suitable for biochemical sensors. The FSR, FWHM, quality factor, and sensitivity for a single channel ring resonator with a radius of 59.4 ㎛ and coupling gap of 0.5 ㎛ were 2.4 nm, 0.087 nm, 17677, and 550 [nm/RIU], respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.21-26
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• 2004

Results from PL and Raman spectroscopic analyses of HPHT (high-pressure high-temperature) treated type IIa diamonds are presented, and these spectral characteristics are compared with those of untreated diamonds of similar color and type. We identify a number of significant changes by 325 nm He/Cd laser excitation. Several peaks are removed completely, including H4, H3 system in HPHT treated diamond. The N3 system, however, increased in emission. Also we can find the behaviour of the nitrogen-vacancy related center N-V centers at 575 and 637.1 nm, as observed with 514 nm Ar ion laser excitation. When these centers are present, the FWHM (full width at half maximum) of 637.1 nm luminescence intensities offers a potential means of separating HPHT-treated from untreated type IIa diamonds. The width of 637.1 nm $(N-V)^-$line measured at the position oi half the peak's height are determine to range from 19.8 to $32.1cm^{-1}$ for HPHT treated diamonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.12
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• pp.607-613
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• 2001

Molybdenum thin films were deposited on the soda lime glass(SLG) substrates by direct-current planar magnetron sputtering, with a sputtering power density of $4.44W/cm^2$. The working pressure was varied from 0.5 mtorr to 20 mtorr to gain a better understanding of the effect of sputtering pressure on the morphology and microstructure of the Mo film. Thin films of $CU(InGa)Se_2$ (CIGS) were deposited on the Mo-coated glass by three stage co-evaporation process. The highest efficiency device was obtained at the maximum value of the tensive stress. The morphology of Mo-coated films were examined by using scanning electron microscopy The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the residual intrinsic stress were examined by X-ray diffraction.

• Nuclear Engineering and Technology
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• v.53 no.4
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• pp.1266-1276
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• 2021

The mask parameters of a coded aperture are critical design features when optimizing the performance of a gamma-ray camera. In this paper, experiments and Monte Carlo simulations were performed to derive the minimum detectable activity (MDA) when one seeks a real-time imaging capability. First, the impact of the thickness of the modified uniformly redundant array (MURA) mask on the image quality is quantified, and the imaging of point, line, and surface radiation sources is demonstrated using both cross-correlation (CC) and maximum likelihood expectation maximization (MLEM) methods. Second, the minimum detectable activity is also derived for real-time imaging by altering the factors used in the image quality assessment, consisting of the peak-to-noise ratio (PSNR), the normalized mean square error (NMSE), the spatial resolution (full width at half maximum; FWHM), and the structural similarity (SSIM), all evaluated as a function of energy and mask thickness. Sufficiently sharp images were reconstructed when the mask thickness was approximately 2 cm for a source energy between 30 keV and 1.5 MeV and the minimum detectable activity for real-time imaging was 23.7 MBq at 1 m distance for a 1 s collection time.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• Journal of radiological science and technology
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• v.26 no.2
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• pp.63-69
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• 2003

Filtering is necessary to reduce statistical noise and to increase image quality in SPECT images. Noises controled by low-pass filter designed to suppress high spatial frequency in SPECT image. Most SPECT filter function control the degree of high frequency supression by chosing a cut of frequency. The location of cut off frequency determines the affect image noise and spatial resolution. If select the low cut off frequency, its provide good noise suppression but insufficient image quantity and high cut off frequencies increase the image resolution but insufficient noise suppression. The purpose of this study was to determines the optimam cut off level with comparison of FWHM according to cut off level in each kiters-Band-limited, Sheep-logan, Sheep-logan Hanning, Generalized Hamming, Low pass cosine, Parazen and Butterworth filter in SPECT camera. We recorded image along the X, Y, Z-axis with $^{99m}TcO_4$ point source and measured FWHM by use profile curve. We find averaged length is $9.16\;mm{\sim}18.14\;mm$ of FWHM in X, Y, and Z-axis, and Band-limited and Generalized Hamming filters measures 9.16 mm at 0.7 cycle/pixel cut off frequency.

• The Bulletin of The Korean Astronomical Society
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• v.41 no.2
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• pp.61.1-61.1
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• 2016

Black hole (BH) mass is a fundamental quantity to understand BH growth, galaxy evolution, and connection between them. Thus, obtaining accurate and precise BH mass estimates over cosmic time is of paramount importance. The rest-frame UV CIV ${\lambda}1549$ broad emission line is commonly used for BH mass estimates in high-redshift AGNs (i.e., $2{\leq}z{\leq}5$) when single-epoch (SE) optical spectra are available. Achieving correct and accurate calibration for CIV-based SE BH mass estimators against the most reliable reverberation-mapping based BH mass estimates is thus practically important and still useful. By performing multi-component spectral decomposition analysis to obtained high-quality HST UV spectra for the updated sample of local reverberation-mapped AGNs including new HST STIS observations, CIV emission line widths and continuum luminosities are consistently measured. Using a Bayesian hierarchical model with MCMC sampling based on Hamiltonian Monte Carlo algorithm (Stan NUTS), we provide the most consistent and accurate calibration of CIV-based BH mass estimators for the three line width characterizations, i.e., full width at half maximum (FWHM), line dispersion (${\sigma}_{line}$), and mean absolute deviation (MAD), in the extended BH mass dynamic range of log $M_{BH}/M_{\odot}=6.5-9.1$.

• Progress in Superconductivity and Cryogenics
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• v.16 no.3
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• pp.7-9
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• 2014

Single-crystal like $MgB_2$ thin film was grown on (000l) $Al_2O_3$ substrate by using hybrid physical-chemical vapor deposition (HPCVD) system. Single crystal properties were studied by X-ray diffraction (XRD) and the full width at half maximum (FWHM) of the (0001) $MgB_2$ peak is $15^{\circ}$, which is very close to that has been reported for $MgB_2$ single-crystal. It indicates that the crystalline quality of thin film is good. Temperature dependence on resistivity was investigated by physical property measurement system (PPMS) in various applied fields from 0 to 9 T. The upper critical field ($H_{c2}$) and irreversibility field ($H_{irr}$) were determined from PPMS data, and the estimated values are comparable with that of $MgB_2$ single-crystals. The thin film shows a high critical temperature ($T_c$) of 40.4 K with a sharp superconducting transition width of 0.2 K, and a high residual resistivity ratio (RRR=21), it reflects that $MgB_2$ thin film has a pure phase structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.241-242
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• 2012

산화아연 씨앗층을 졸-겔 스핀코팅법으로 석영기판위에 증착시킨 후, 수열합성법을 이용하여 갈륨의 양을 0에서 2.0 at.% 으로 변화를 주어 갈륨이 도핑된 산화아연 나노막대를 성장하였다. 산화아연과 갈륨이 도핑된 산화아연 나노막대의 구조적 광학적 특성을 조사하기 위해 field-emission scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), 그리고 ultraviolet-visible spectroscopy를 이용하였다. 일정한 산화아연과 갈륨이 도핑된 산화아연 나노막대는 육각형형태로 성장하였다. XRD 데이터로부터, 산화아연과 갈륨이 도핑된 산화아연 나노막대의 스트레스는 각각 -0.022 (0 at.%), 0.097 (0.5 at.%), 0.165 (1.0 at.%), 0.177 (1.5 at.%), 0.182 GPa (2.0 at.%) 였다. PL 스펙트라에서 얻어진 반가폭(The full width at half maximum)은 갈륨의 양이 0에서 2.0 at.%로 증가함에 따라 127에서 171 meV로 증가하였다. Urbach 에너지는 68 (0 at.%), 97 (0.5 at.%), 108 (1.0 at.%), 104 (1.5 at.%), 127 meV (2.0 at.%)였다.