• Journal of IKEEE
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• v.22 no.3
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• pp.780-785
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• 2018

In this work, We investigated the frequency-dependent capacitance tunability of a metal-ferroelectric-metal variable capacitor fabricated using ALD $HfO_2$ ferroelectric material. The capacitance of the MFM capacitor could be tuned as a function of the bias voltage, up to the microwave frequency range. We observed a capacitance tuning range of ~3 % up to 2.5 GHz, proving the feasibility of the use of ALD $HfO_2$ in the microwave frequency band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.550-553
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• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.

• Corrosion Science and Technology
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• v.20 no.5
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• pp.231-241
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• 2021

The objective of this study was to evaluate total current under steady-state conditions for a material undergoing corrosion using the electrochemical frequency modulation (EFM) technique, taking into account the presence of solution resistance and double layer capacitance. The analysis involving linearization of the Tafel curve allowed for the estimation of corrosion parameters. Results showed that the output signal was dependent on fundamental frequencies and their multiples. In addition, the output signal almost manifested itself at frequencies that were sums of fundamental frequencies of the applied sinusoidal signal. The harmonics calculated showed a significant shift from the principal frequency of input signals. The investigation involved the influence of corrosion current and anode-to-cathode Tafel slope ratio on faradaic and non-faradaic currents (including the average and RMS). The model presented showed both qualitative and quantitative improvements over the previously developed EFM technique that ignored the influence of solution resistance and the double layer capacitance while assuming the applied DC potential corresponded to the corrosion potential of the corroding material.

• Archives of Metallurgy and Materials
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• v.65 no.3
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• pp.1063-1067
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• 2020

Dynamic charge carrier transport behavior in the zirconium (Zr) oxide was investigated based on the frequency-dependent capacitance-voltage (C-V) and temperature-dependent current-voltage (I-V) measurements. The Zr oxide was formed on the ZIRLO and newly developed zirconium-based alloy (NDZ) by corrosion in the PWR-simulated loop at 360℃. The corrosion test for 90 days showed that the NDZ exhibits better corrosion resistance than ZIRLO alloy. Based on the C-V measurement, dielectric constant values for the Zr oxide was estimated to be 11.28 and 11.52 for the ZIRLO and NDZ. The capacitance difference between low and high frequency was larger in the ZIRLO than in the NDZ, which was attributed to more mobile electrical charge carriers in the oxide layer on the ZIRLO alloy. The current through the oxide layers on the ZIRLO increased more drastically with increasing temperature than on the NDZ, which indicating that more charge trap sites exist in the ZIRLO than in NDZ. Based on the dynamic charge carrier transport behavior, it was concluded that the electrical charge carrier transport within the oxide layers was closely related with the corrosion behavior of the Zr alloys.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1386-1392
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• 2009

An analysis is presented for super-high-speed optical demodulation by an avalanche photodiode(APD) with electric mixing. A normalized gain is defined to evaluate the performance of the optical mixing detection. Unlike previous work, we include the effect of the nonlinear variation of the APD capacitance with bias voltage as well as the effect of parasitic and amplifier input capacitance. As a results, the normalized gain is dependent on the signal frequency and the frequency difference between the signal and the local oscillator frequency. However, the current through the equivalent resistance of the APD is almost independent of signal frequency. The mixing output is mainly attributed to the nonlinearity of the multiplication factor. We show also that there is an optimal local oscillator voltage at which the normalized gain is maximized for a given avalanche photodiode.

• Bulletin of the Korean Chemical Society
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• v.10 no.6
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• pp.495-500
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• 1989

The ionic conductivity of polycrystalline, glass, and glass-ceramic silicates was measured using two-terminal AC method with blocking electrode over a frequency range of 100 Hz to 100 KHz in the temperature range of $200^{\circ}C$ to $320^{\circ}C$. Analysing the capacitance (C), susceptance (B), impedance (Z), and conductance (G) under the given conditions, an equivalent circuit containing temperature and frequency dependent component is proposed. Higher capacitance could be observed in the low frequency region and on the improved ionic migration conditions i.e., at higher temperature in a better ionic conductor. Also the electrode polarization built up at the electrode-specimen interface could be sorted out above 10 KHz. However, grain boundary contribution couldn't be extracted from the bulk resistance over the frequency range measured here.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.497-503
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• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.440-448
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• 2001

The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.110-113
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• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.683-684
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• 2008

The resistance is frequency dependent by the Seeback effect, loading effect, Eddy current loss, uniformly distributed inductance of the resistance element and uniformly distributed self-capacitance of the resistance element and capacitance between resistance element and it's box. A precise ac resistance measurement system has been developed for using as maintaining and dissemination of national ac resistance standards. The developed resistance measurement system can be used as a instrument of national ac resistance standards at frequency less than 10 kHz and it's measurement accuracy was 0.23(${\mu}{\Omega}/{\Omega}$)+4.2 ${\mu}{\Omega}$ at 1592 Hz and 20 V.