• 전기전자학회논문지
• /
• 제22권3호
• /
• pp.780-785
• /
• 2018

본 논문에서는 tunable RF 기기에 적용이 가능한 $HfO_2$ 강유전체를 활용하여 metal-ferroelectric-metal (MFM) 커패시터를 구현하였으며 마이크로파 대역주파수 까지 전압에 따른 커패시턴스 tunability 특성을 고찰 하였다. 1kHz부터 5GHz 대역에 이르기까지 광범위한 범위의 커패시턴스-전압 특성을 분석하였으며 커패시턴스 tunability는 500 MHz 이상의 주파수에서 2.5 GHz 대역까지 ~3 %의 tunability가 유지되는 것을 확인 하여 마이크로파 주파수 대역에서 ALD $HfO_2$기반 전자 제어 가변 커패시터의 사용 가능성을 입증하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.550-553
• /
• 2001

In this study, unity current gain frequency f$\_$T/ of GaAs MESFET is predicted with different temperatures up to 400 $^{\circ}C$. Temperature dependence parameters of the device including intrinsic carrier concentration n$\_$i/ effective mass, depletion width are considered to be temperature dependent. Small signal parameters such as gate-source, gate dran capacitances C$\_$gs/ C$\_$gd/ are correlated with transconductance g$\_$m/ to predict the unity current gain frequency. The extrinsic capacitance which plays an important roles in high frequency region has been taken into consideration in evaluating total capacitance by using elliptic integral through the substrate. From the results, f$\_$T/ decreases as the temperature increases due to the increase of small signal capacitances and the mobility degradation. Finally the extrinsic elements of capacitances have been proved to be critical in deciding f$\_$T/ which are originated from the design rule of the device.

• Corrosion Science and Technology
• /
• 제20권5호
• /
• pp.231-241
• /
• 2021

The objective of this study was to evaluate total current under steady-state conditions for a material undergoing corrosion using the electrochemical frequency modulation (EFM) technique, taking into account the presence of solution resistance and double layer capacitance. The analysis involving linearization of the Tafel curve allowed for the estimation of corrosion parameters. Results showed that the output signal was dependent on fundamental frequencies and their multiples. In addition, the output signal almost manifested itself at frequencies that were sums of fundamental frequencies of the applied sinusoidal signal. The harmonics calculated showed a significant shift from the principal frequency of input signals. The investigation involved the influence of corrosion current and anode-to-cathode Tafel slope ratio on faradaic and non-faradaic currents (including the average and RMS). The model presented showed both qualitative and quantitative improvements over the previously developed EFM technique that ignored the influence of solution resistance and the double layer capacitance while assuming the applied DC potential corresponded to the corrosion potential of the corroding material.

• Archives of Metallurgy and Materials
• /
• 제65권3호
• /
• pp.1063-1067
• /
• 2020

Dynamic charge carrier transport behavior in the zirconium (Zr) oxide was investigated based on the frequency-dependent capacitance-voltage (C-V) and temperature-dependent current-voltage (I-V) measurements. The Zr oxide was formed on the ZIRLO and newly developed zirconium-based alloy (NDZ) by corrosion in the PWR-simulated loop at 360℃. The corrosion test for 90 days showed that the NDZ exhibits better corrosion resistance than ZIRLO alloy. Based on the C-V measurement, dielectric constant values for the Zr oxide was estimated to be 11.28 and 11.52 for the ZIRLO and NDZ. The capacitance difference between low and high frequency was larger in the ZIRLO than in the NDZ, which was attributed to more mobile electrical charge carriers in the oxide layer on the ZIRLO alloy. The current through the oxide layers on the ZIRLO increased more drastically with increasing temperature than on the NDZ, which indicating that more charge trap sites exist in the ZIRLO than in NDZ. Based on the dynamic charge carrier transport behavior, it was concluded that the electrical charge carrier transport within the oxide layers was closely related with the corrosion behavior of the Zr alloys.

• 전기학회논문지
• /
• 제58권7호
• /
• pp.1386-1392
• /
• 2009

An analysis is presented for super-high-speed optical demodulation by an avalanche photodiode(APD) with electric mixing. A normalized gain is defined to evaluate the performance of the optical mixing detection. Unlike previous work, we include the effect of the nonlinear variation of the APD capacitance with bias voltage as well as the effect of parasitic and amplifier input capacitance. As a results, the normalized gain is dependent on the signal frequency and the frequency difference between the signal and the local oscillator frequency. However, the current through the equivalent resistance of the APD is almost independent of signal frequency. The mixing output is mainly attributed to the nonlinearity of the multiplication factor. We show also that there is an optimal local oscillator voltage at which the normalized gain is maximized for a given avalanche photodiode.

• Bulletin of the Korean Chemical Society
• /
• 제10권6호
• /
• pp.495-500
• /
• 1989

The ionic conductivity of polycrystalline, glass, and glass-ceramic silicates was measured using two-terminal AC method with blocking electrode over a frequency range of 100 Hz to 100 KHz in the temperature range of $200^{\circ}C$ to $320^{\circ}C$. Analysing the capacitance (C), susceptance (B), impedance (Z), and conductance (G) under the given conditions, an equivalent circuit containing temperature and frequency dependent component is proposed. Higher capacitance could be observed in the low frequency region and on the improved ionic migration conditions i.e., at higher temperature in a better ionic conductor. Also the electrode polarization built up at the electrode-specimen interface could be sorted out above 10 KHz. However, grain boundary contribution couldn't be extracted from the bulk resistance over the frequency range measured here.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권5호
• /
• pp.497-503
• /
• 2015

It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.

• 한국진공학회지
• /
• 제10권4호
• /
• pp.440-448
• /
• 2001

논문에서는 원통형 및 평판형 반응기에 20 kV의 사각파형 펄스전원을 인가하여 대기압 절연막 방전 플라즈마 반응기의 동작특성을 관찰하였다. 전류-전압파형과 하전량-전압곡선을 관찰한 결과 반응기의 정전용량 크기에 따라서 최적의 운전효율을 갖는 최적운전주파수 $f_0$가 $f_0\proptoexp(-C)$의 관계를 갖고 있음을 알았다. 이 관계를 이용하여 반응기에서 소실되는 소모전력을 구하였다. 반응기의 소모전력은 반응기의 구조와 전극의 유전물질의 종류 등의 함수인 반응기 정전용량 값에 따라서 변화하였으며 반응기의 특정한 정전용량 값에서 최대값을 가졌다. 이 정전용량 값을 이용하여 최적효율을 갖는 DBD 반응기를 설계할 수 있을 것으로 사료된다.

• 한국공작기계학회논문집
• /
• 제17권2호
• /
• pp.110-113
• /
• 2008

Embedded capacitor technology is one of the effective packing technologies for further miniaturization and higher performance of electric packaging system. In this paper, the embedded capacitors were simulated and fabricated in 8-layered printed circuit board employing standard PCB processes. The composites of barium titanante($BaTiO_3$) powder and epoxy resin were employed for the dielectric materials in embedded capacitors. Theoretical considerations regarding the embedded capacitors have been paid to understand the frequency dependent impedance behavior. Frequency dependent impedance of simulated and fabricated embedded capacitors was investigated. Fabricated embedded capacitors have lower self resonance frequency values than that of the simulated embedded capacitors due to the increased parasitic inductance values. Frequency dependent capacitances of fabricated embedded capacitors were well matched with those of simulated embedded capacitors from the 100MHz to 10GHz range. Quality factor of 20 was observed and simulated at 2GHz range in the 10 pF embedded capacitors. Temperature dependent capacitance of fabricated embedded capacitors was presented.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2008년도 제39회 하계학술대회
• /
• pp.683-684
• /
• 2008

The resistance is frequency dependent by the Seeback effect, loading effect, Eddy current loss, uniformly distributed inductance of the resistance element and uniformly distributed self-capacitance of the resistance element and capacitance between resistance element and it's box. A precise ac resistance measurement system has been developed for using as maintaining and dissemination of national ac resistance standards. The developed resistance measurement system can be used as a instrument of national ac resistance standards at frequency less than 10 kHz and it's measurement accuracy was 0.23(${\mu}{\Omega}/{\Omega}$)+4.2 ${\mu}{\Omega}$ at 1592 Hz and 20 V.