• Journal of Navigation and Port Research
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• v.26 no.5
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• pp.529-535
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• 2002

Design and implementation methodologies on the performance evaluation system of Two-Channel Ring-Core Flux-Gate Compass (TCRC FG-Compass) are described, with evaluation procedures and methods based on the polynomial regression models. Performance evaluation system consists of a step motor driving unit, a bearing transmitting unit and evaluation programs derived from polynomial regression formulae. Newly designed performance evaluation system enabled the accuracy of TCRC FG-Compass to be ascertained. It was confirmed that the size of residual deviation of TCRC FG-Compass is $2^{\circ}$, while that of the conventional one is $4^{\circ}$. In addition, the design methodology to the self estimation and correction of residual deviations is also discussed.

• Journal of the Korean Magnetics Society
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• v.22 no.2
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• pp.45-48
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• 2012

Feed-back type 3-axis flux-gate magnetometer using Co-based amorphous ribbon (Metglass$^{(R)}$2714A) was constructed in this work. Measuring range of magnetic field and frequency were ${\pm}100\;{\mu}T$ and dc~10 Hz respectively. For the interface to computer, microcontroller and 24 bit ADC (Analog to Digital Converter) were employed and resolution of digital output was 0.1 nT. Magnetometer noise of analog output was 5 pT/$\sqrt{Hz}$ at 1 Hz. Digital output of the magnetometer showed linearity of $1{\times}10^{-4}$ and the offset drift was smaller than 0.2 nT during 1 h.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.182-183
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• 2010

• Progress in Superconductivity
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• v.4 no.2
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• pp.127-131
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• 2003

We have designed and measured an SFQ(Single Flux Quantum) OR gate for a superconducting ALU (Arithmetic Logic Unit). To optimize the circuit, we used WRspice, XIC and Lmeter for simulations and layouts. The OR gate was consisted of a Confluence Buffer and a D Flip-Flop. When a pulse enters into the OR gate, the pulse does not propagate to the other input port because of the Confluence Buffer. A role of D Flip-Flip is expelling the data when the clock is entered into D Flip-Flop. For the measurement of the OR gate operation, we attached three DC/SFQs, three SFQ/DCs and one RS Flip -Flop to the OR gate. DC/SFQ circuits were used to generate the data pulses and clock pulses. Input frequency of 10kHz and 1MHzwere used to generate the SFQ pulses from DC/SFQ circuits. Output data from OR gate moved to RS flip -Flop to display the output on the oscilloscope. We obtained bias margins of the D Flip -Flop and the Confluence Buffer from the measurements. The measured bias margins $\pm$38.6% and $\pm$23.2% for D Flip-Flop and Confluence Buffer, respectively The circuit was measured at the liquid helium temperature.

• Journal of Navigation and Port Research
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• v.26 no.1
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• pp.127-136
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• 2002

This paper Presents a discussion on the design and realization for the Phase Sensitive Defector (PSD) circuitry of Flu$\chi$-gate Compass that gives direction information to the Directional Frequency Analysis and Recording (DIFAR) Sonobuoy in Air Anti-Submarine Warfare. PSD circuitry is realized with Twin-T RC networked active band-pass filter. Results of a performance test the PSD circuitry shows that the effectiveness of band-pass filtering of desired $2F_0$ second harmonic signal, which is Pro- portional to the direction of earth's magnetic field. This resulted in the extraction of direction information.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.26-26
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• 2014

• Proceedings of the Korean Magnestics Society Conference
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• 2012.11a
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• pp.151-152
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• 2012

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.44-47
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• 2003

There are several simulation programs in studying superconductor RSFQ (Rapid Single flux Quantum) electronic devices, which include WRspice, WinS, PSCAN, and JSIM. Even though different research groups use different simulation programs, it is not well known about which program gives the simulation results closer to the measurement values. In this work, we used both WRspice and WinS to simulate RSFQ OR gate and to compare the results from the different simulations. This comparison would help in deciding which program is better in the RSFQ circuit design. In the confluence buffer, which is the one of the main components of the DR gate, the measured bias margins were ${\times}23.2%$, while the margins from the simulations were ${\pm}35.56%$ from WRspice and it 53.1% from WinS. However, with the actual fabricated circuit parameters WRspice gave ${\pm}27%$. In WinS the circuit did not operate. We concluded that WRspice is more reliable.

• Proceedings of the Korean Magnestics Society Conference
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• 1993.11a
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• pp.26-27
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• 1993