• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.5-9
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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• pp.67-72
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link breakage structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.330-333
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• 2005

We investigated the liquid crystal (LC) alignment phenomena using a-C:H and a-C:F:H thin films. Homogeneous alignment is obtained using ion beam treated hydrogenated amorphous carbon (a-C:H) thin films. Homeotropic alignment is obtained using F treated a-C:H thin films, namely, fluorinated amorphous carbon (a-C:F:H) thin films. We investigated the relationship between the surface properties of amorphous carbon based alignment layer and LC alignment phenomena.

• 센서학회지
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• 제13권3호
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• pp.182-187
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• 2004

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

• Journal of Korean Vacuum Science & Technology
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• 제7권2호
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• pp.33-38
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• 2003

Fluorinated amorphous carbon thin films (a-C:F) for the use of low dielectric constant intermetallic layer dielectrics are deposited by plasma enhanced chemical vapor deposition with $C_4$F$_{8}$ and Si$_2$H$_{6}$/He gas mixture as precursors. To characterize and improve film properties, we changed various conditions such as deposition temperature, and RF power, and we measured the thickness and refractive indexes and FT-IR spectrum before and after annealing. At low temperatures the film properties were very poor although the growth rate was very high. On the other hand, the growth rate was low at high temperature. The growth rate increased in accordance with the deposition pressure. The dielectric constants of samples were in the range of 1.5∼5.5∼5.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1019-1021
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• 1995

Light induced degradation of hydrogenated amorphous silicon(a-Si:H) are related to the number of weak dangling bonds which are thought to be responsible for the Staebler-Wronski effects, and caused the many photoelectric problems in applications of thin film transistors and solar cell, etc. In this paper, we deposited fluorinated amorphous silicon films(a-Si:H;F) with $SiH_4$ and $SiF_4$ gas mixture and investigated the effects of fluorine atoms on the evoluations of the crystallinity and improvements of light instability. We have found that micro-crystallinity produced in a-SI:H;F films and marked maximum value of 22% at the flow rate of $SiH_4:SiF_4$=2:10 sccm by UV spectrophotometer measurement, while n-Si:H film deposited with only $SiH_4$ gas showed no crystallinity. Light-induced degradation property of a-Si:H;F films is also improved which is mainly due to the etching effects of fluorine atoms on the weak Si-Si bonds and unstable hydrogen bonds. It is considered that involving fluorine atoms in a-Si:H films may contribute to the suppression of light-induced degradation and evolution of micro-crystallinity.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 한국재료학회지
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• 제9권12호
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• pp.1211-1215
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• 1999

a-C:F 박막은 $C_2F_6$와 $CH_4$를 원료 가스로 하여 증착온도를 상온에서 300$^{\circ}C$까지 변화시켜가면서 ECRCVD 방법으로 증착하였다. 기판과 a-C:F 막 사이의 밀착력 향상을 위해 약 500$^{\AA}C$두께의 DLC 박막을 기판 위에 증착하였다. 증착 온도에 따라 형성된 a-C:F 박막의 증착률, 화학적 결합상태, 결합구조와 원소의 조성비 등을 FTIR, XPS, AFM, 그리고 C-V측정으로부터 분석하였다. 증착 속도와 불소의 함량은 증착온도가 증가할수록 감소하였다. 불소의 상대원자비는 상온에서 증착한 경우 53.9at.%였으며, 300$^{\circ}C$에서 증착한 경우 41.0at.%로 감소하였다. 유전 상수는 증착온도가 상온에서 300$^{\circ}C$까지 증가함에 따라 2.45에서 2.71까지 상승하였다. 증착온도가 증가함으로써 막의 수축은 줄어들었으며 이는 높은 증착온도에서 막의 crosslinking 구조가 증가되었기 때문이다.

• 한국재료학회지
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• 제33권4호
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• pp.124-129
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• 2023

This study assessed the influences of fluorine introduced into DLC films on the structural and mechanical properties of the sample. In addition, the effects of the fluorine incorporation on the compressive stress in DLC films were investigated. For this purpose, fluorinated diamond-like carbon (F-DLC) films were deposited on cobalt-chromium-molybdenum substrates using radio-frequency plasma-enhanced chemical vapor. The coatings were examined by Raman scattering (RS), Attenuated total reflectance Fourier transform infrared spectroscopic analysis (ATR-FTIR), and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by the Stony equation. The ATR-FTIR analysis revealed that F was present in the amorphous matrix mainly as C-F and C-F₂ groups. Based on Raman spectroscopy results, it was determined that F made the DLC films more graphitic. Additionally, it was shown that adding F into the DLC coating resulted in weaker mechanical properties and the F-DLC coating exhibited lower stress than DLC films. These effects were attributed to the replacement of strong C = C by feebler C-F bonds in the F-DLC films. F-doping decreased the hardness of the DLC from 11.5 to 8.8 GPa. In addition, with F addition, the compressive stress of the DLC sample decreased from 1 to 0.7 GPa.

• 한국진공학회지
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• 제7권4호
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• pp.368-373
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• 1998

초고집적 회로의 미세화에 따라 다층배선에서 기생저항(parasitic resistance)과 정전 용량의 증가는 RC시정수(time constant)의 증가로 인하여 소자의 동작속도를 제한하고 있 다. 이로 인하여 발생되는 배선지연의 문제를 해결하기 위하여 매우 낮은 유전상수를 갖는 층간 절연물질이 필요하다. 이러한 저유전상수 층간절연물질로서 현재 유기계 물질중의 하 나인 a-C:F이 주목받고 있는 물질이다. 본 연구에서는 ECRCVD를 이용하여 a-C:F박막과 Si기판사이의 밀착력을 향상시키기 위하여 a-C:H박막을 500$\AA$증착한 후 a-C:F을 증착전력 500W에서 원료가스의 유량비($C_2F_6, CH_4/(C_2F_6+CH_4)$))를 0~1.0까지 변화시키면서 상온에서 증착하 였다. a-C:F박막의 특성은 SEM, FT0IR, XPS, C-V meter와 AFM등을 이용하여 두께, 결 합상태, 유전상수, 표면형상 및 표면 거칠기를 관찰하였다. a-C:F박막에서 불소함량은 가스 유량비가 1.0일 경우에는 최대 약31at.%정도 검출되었으며, 가스 유량비가 증가됨에 따라 증 가하였다. 또한 유전상수는 a-C:H의 유전상수 $\varepsilon$=3.8에서 $\varepsilon$=2.35까지 감소하였다. 이는 영 구 쌍극자 모멘트가 1.5인 C-H결합은 감소하고 영구 쌍극자 모멘트가 0.6, 0.5인 CF, CF2결 합이 증가하였기 때문이다. 하지만 $400^{\circ}C$에서 질소분위기로 1시간 동안 furnace열처리 후에 가스유량비가 1.0인 a-C:F박막에서 불소의 함량이 감소하여 C-F결합이 줄어들었다. 이로 인하여 유전상수가 열처리전의 2.7에서 열처리후 3.2까지 상승하였다.