• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.152-152
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• 2016

We studied the effect of the silver grid size on graphene transparent conducting films for flexible organic solar cells (OSCs). The silver grid was used an assistant layer of the graphene to reduce the sheet resistance of substrates. Silver grid with various graphene sizes for optimizing transmittance and sheet resistance of substrates were fabricated on polyethylene terephthalate (PET) substrates to form the hybrid films. The optimized grid geometry on the single layer graphene (SLG) was the grid dimension $200{\mu}m{\times}200{\mu}m{\times}50nm{\times}2{\mu}m$ (length ${\times}$ width ${\times}$ height ${\times}$ linewidth), where the sheet resistance was $55.73{\Omega}/square$ with the average transmittance of ~ 92.83 % at 550 nm. The properties of the OSCs fabricated using SLG with optimized silver grids on PET substrates show a short circuit current of $10.9mA/cm^2$, an open circuit voltage of 0.58 V, a fill factor of 60.8 %, and a power conversion efficiency (PCE) of 3.9 %. The PCE was improved about 91% than that of the OSCs using the SLG without the silver grid. These results demonstrate that the optimized grid geometry to the based on the graphene transparent electrodes contribute to improving the performance of OSCs.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.183-188
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• 2019

Flexible dye-sensitized solar cells using binder free $TiO_2$ paste for low temperature sintering are developed. In this paste a small amount of titanium gel is added to a paste of $TiO_2$ nanoparticle. Analysis of titanium gel paste prepared at $150^{\circ}C$ shows that it has a pure anatase phase in XRD and mesoporous structure in SEM. The formation of the titanium gel 1-2 nm coated layer is confirmed by comparing the TEM image analysis of the titanium gel paste and the pristine paste. This coating layer improves the excited electron transfer and electrical contact between particles. The J-V curves of the organic binder DSSCs fabricated at $150^{\circ}C$ shows a current density of $0.12mA/cm^2$ and an open-circuit voltage of 0.47 V, while the titanium gel DSSCs improves electrical characteristics to $5.04mA/cm^2$ and 0.74 V. As a result, the photoelectric conversion efficiency of the organic binder DSSC prepared at low temperature is as low as 0.02 %, but the titanium gel paste DSSCs has a measured effciency of 2.76 %.

• Korean Journal of Materials Research
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• v.20 no.10
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• pp.501-507
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• 2010

Changes in surface morphology and roughness of dc sputtered ZnO:Al/Ag back reflectors by varying the deposition temperature and their influence on the performance of flexible silicon thin film solar cells were systematically investigated. By increasing the deposition temperature from $25^{\circ}C$ to $500^{\circ}C$, the grain size of Ag thin films increased from 100 nm to 1000 nm and the grain size distribution became irregular, which resulted in an increment of surface roughness from 6.6 nm to 46.6 nm. Even after the 100 nm thick ZnO:Al film deposition, the surface morphology and roughness of the ZnO:Al/Ag double structured back reflectors were the same as those of the Ag layers, meaning that the ZnO:Al films were deposited conformally on the Ag films without unnecessary changes in the surfacefeatures. The diffused reflectance of the back reflectors improved significantly with the increasing grain size and surface roughness of the Ag films, and in particular, an enhanced diffused reflectance in the long wavelength over 800 nm was observed in the Ag back reflectors deposited at $500^{\circ}C$, which had an irregular grain size distribution of 200-1000 nm and large surface roughness. The improved light scattering properties on the rough ZnO:Al/Ag back reflector surfaces led to an increase of light trapping in the solar cells, and this resulted in a noticeable improvement in the $J_{sc}$ values from 9.94 mA/$cm^2$ for the flat Ag back reflector at $25^{\circ}C$ to 13.36 mA/$cm^2$ for the rough one at $500^{\circ}C$. A conversion efficiency of 7.60% ($V_{oc}$ = 0.93, $J_{sc}$ = 13.36 mA/$cm^2$, FF = 61%) was achieved in the flexible silicon thin film solar cells at this moment.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.831-836
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• 2013

Platinized counter electrode is common in most of the dye sensitized solar cell (DSSC) researches because of its high catalytic activity and corrosion stability against iodine in the electrolyte. Platinum (Pt) film coating on fluorine doped tin oxide (FTO) glass surface by using alcoholic solution of hexachloroplatinic acid ($H_2PtCl_6$), paste containing Pt precursors or sputtering are widely used techniques. This paper presents a novel application of Pt ink containing nanoparticles for making platinized counter electrode for DSSC. The characteristics of Pt films coated on FTO glass surface by different chemical methods were compared along with the performance parameters of the DSSCs made by using the films as counter electrodes. The samples coated with Pt inks were sintered at $300^{\circ}C$ for 30 minutes whereas Pt-film and Pt-paste were sintered at $400^{\circ}C$ for 30 minutes. The Pt ink diluted in n-hexane was found to a promising candidate for the preparation of platinized counter electrode. The ink may also be applicable for DSSC on flexible substrates after optimization its sintering temperature.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.6
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• pp.577-582
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• 2013

AZO (aluminum-doped zinc oxide) is one of the best candidate materials to replace ITO (indium tin oxide) for TCOs (transparent conductive oxides) used in flat panel displays, organic light-emitting diodes (OLEDs), and organic solar cells (OSCs). In the present study, to apply an AZO thin film to the transparent electrode of an organic solar cell, a low-temperature selective atomic layer deposition (ALD) process was adopted to deposit an AZO thin film on a flexible poly-ethylene-naphthalate (PEN) substrate. The reactive gases for the ALD process were di-ethyl-zinc (DEZ) and tri-methyl-aluminum (TMA) as precursors and H2O as an oxidant. The structural, electrical, and optical characteristics of the AZO thin film were evaluated. From the measured results of the electrical and optical characteristics of the AZO thin films deposited on the PEN substrates by ALD, it was shown that the AZO thin film appeared to be comparable to a commercially used ITO thin film, which confirmed the feasibility of AZO as a TCO for flexible organic solar cells in the near future.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.377-377
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• 2011

Organic solar cells (OSCs) with low cost have been studied to apply on flexible substrate by solution process in low temperature [1]. In previous researches, conventional organic solar cell was composed of metal oxide anode, buffer layer such as PEDOT:PSS, photoactive layer, and metal cathode with low work function. In this structure, indium tin oxide (ITO) and Al was generally used as metal oxide anode and metal cathode, respectively. However, they showed poor reliability, because PEDOT:PSS was sensitive to moisture and air, and the low work function metal cathode was easily oxidized to air, resulting in decreased efficiency in half per day [2]. Inverted organic solar cells (IOSCs) using high work function metal and buffer layer replacing the PEDOT:PSS have focused as a solution in conventional organic solar cell. On the contrary to conventional OSCs, ZnO and TiO2 are required to be used as a buffer layer, since the ITO in IOSC is used as cathode to collect electrons and block holes. The ZnO is expected to be excellent electron transport layer (ETL), because the ZnO has the advantages of high electron mobility, stability in air, easy fabrication at room temperature, and UV absorption. In this study, the IOSCs based on poly [N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) : [6,6]-phenyl C71 butyric acid methyl ester (PC70BM) were fabricated with the ZnO electron-transport layer and MoO3 hole-transport layer. Thickness of the ZnO for electron-transport layer was controlled by rotation speed in spin-coating. The PCDTBT and PC70BM were mixed with a ratio of 1:2 as an active layer. As a result, the highest efficiency of 2.53% was achieved.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.179-179
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.20-20
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• 2010

Organic based photovoltaics (OPV) have been received a lot of attention because they are lightweight, inexpensive to fabricate and flexible compare to crystalline Si solar cells. In this seminar, several important progresses in the Polymer PV, such as, formation of bulk heterojunction, development of post annealing technique, tandem cell fabrication will be introduced. In addition that, some efforts to achieve the further improvement in the performance of the Polymer PV will be discussed.

• Journal of the Korean institute of surface engineering
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• v.52 no.1
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• pp.6-15
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• 2019

Metal-halide perovskite (MHP) solar cell is a promising candidate for next-generation flexible devices and the BIPV (Building-integrated photovoltaics) because it can exhibit high power conversion efficiencies over 23%, good bendability and low processing cost. However, MHP solar cells are commonly fabricated by the spin coating that is not a reliable method to produce large-scale commercial solar cells. A shear coating can be one of the potential candidates for the large-scale deposition method of MHP films. In this work, the influences of the process parameters such as solvents of precursor solution, substrate temperature, concentrations of precursor solution, and annealing time on the thin film growth of MHP were investigated for the shear coating process. This study presents the possibility of the shear coating process for large-scaled perovskite film fabrication and reveals the role of process condition in the thin film growth of perovskites.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.