• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.31-33
• /
• 2002

Si TFTs are applied not only to stacked SRAM but also to FPD. Improvement of device characteristic such as an enhancement of carrier mobility or a reduction of leakage current is studied intensively. The TFT technology is developing based on conventional Si LSI technology. By establishing a stable fabrication process on flexible substrate and high performance characteristic uniformly and reliably, TFT technology has a possibility to develop to SOP or other highly functional applications similar to or beyond the conventional Si LSI in the era of information and telecommunication.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.189-192
• /
• 2008

A 5.8-inch wide-QQVGA flexible full-color active-matrix OLED display was fabricated on a plastic substrate. Low-voltage-operation organic TFTs and high-efficiency phosphorescent OLEDs were used as the backplane and emissive pixels, respectively. The fabricated display clearly showed color moving images when the driving voltage was below 15 V.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.257-260
• /
• 2007

Hydrogenated amorphous silicon thin film transistors were fabricated on a flexible metal substrate. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and gate electrode. This can recover the shifted-threshold voltage to an original value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.821-825
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.44-44
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO channel layers(ZnO TFTs) having different channel thicknesses. The ZnO film were deposited as active channel layers on $Si_3N_4/Ti/SiO_2p$-Si substrates by rf magnetron sputtering at $100\;^{\circ}C$ without additional annealing. Also the Zno thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film were deposited as gate insulator by PE-CVD at $15\;^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method.

• Advanced Industrial SCIence
• /
• v.1 no.1
• /
• pp.16-22
• /
• 2022

Starting with cathode ray tubes, displays are forming markets in the order of active marix organic light emitting diode (AMOLED) after PDP (Plasma Display Panel) and LCD (Liquid Crystal Display). OLED is recognized as a key field for the development of each country preparing for the fourth industrial revolution, and especially Samsung Display and LG Display, which are the top industries in Korea, are leading the market with more than 90% of OLED shares. Currently, AMOLED has moved to the area that can be folded or bent. This technology is possible because TFT (Thin Film Transistor) and OLED may be formed on a flexible substrate. In the future, the technology will move to stretchable displays, and for this, the development of substrate materials is first, and then TFT and OLED devices should also be implemented with stretchable materials.

• The Magazine of the IEIE
• /
• v.35 no.8
• /
• pp.25-38
• /
• 2008

• Information Display
• /
• v.11 no.6
• /
• pp.21-26
• /
• 2010

• Electrical & Electronic Materials
• /
• v.27 no.11
• /
• pp.20-30
• /
• 2014

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1297-1300
• /
• 2008

Electrical stress degradation of low temperature, amorphous silicon thin film transistors is reviewed, and the implications for various types of flexible circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented.