• Journal of Information Processing Systems
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• v.14 no.3
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• pp.631-644
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• 2018

Many studies on flash memory-based buffer replacement algorithms that consider the characteristics of flash memory have recently been developed. Conventional flash memory-based buffer replacement algorithms have the disadvantage that the operation speed slows down, because only the reference is checked when selecting a replacement target page and either the reference count is not considered, or when the reference time is considered, the elapsed time is considered. Therefore, this paper seeks to solve the problem of conventional flash memory-based buffer replacement algorithm by dividing pages into groups and considering the reference frequency and reference time when selecting the replacement target page. In addition, because flash memory has a limited lifespan, candidates for replacement pages are selected based on the number of deletions.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.236.2-236.2
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• 2014

세계 반도체 시장은 컴퓨터 기능이 더해진 모바일 기기의 수요가 증가함에 따라 메모리반도체의 시장규모가 최근 빠른 속도로 증가했다. 특히 모바일 기기에서 저장장치 역할을 하는 비휘발성 반도체인 NAND Flash Memory는 스마트폰 및 태블릿PC 등 휴대용 기기의 수요 증가, SSD (Solid State Drive)를 탑재한 PC의 수요 확대, 서버용 SSD시장의 활성화 등으로 연평균 18.9%의 성장을 보이고 있다. 이러한 경제적인 배경 속에서 NAND Flash 미세공정 기술의 마지막 단계로 여겨지는 1Xnm 공정이 개발되었다. 그러나 1Xnm Flash Memory의 생산은 새로운 제조설비 구축과 차세대 공정 기술의 적용으로 제조비용이 상승하는 단점이 있다. 이에 따라 제조공정기술을 미세화하지 않고 기존의 수평적 셀구조에서 수직적 셀구조로 설계 구조를 다양화하는 기술이 대두되고 있는데 이 중 Flash Memory의 대용량화와 수명 향상을 동시에 추구할 수 있는 3D NAND 기술이 주목을 받게 되면서 공정기술의 변화도 함께 대두되고 있다. 3D NAND 기술은 기존라인에서 전환하는데 드는 비용이 크지 않으며, 노광장비의 중요도가 축소되는 반면, 증착(Chemical Vapor Deposition) 및 식각공정(Etching)의 기술적 난이도와 스텝수가 증가한다. 이 중 V-NAND 3D 기술에서 사용하는 박막증착 공정의 경우 산화막과 질화막을 번갈아 증착하여 30layer 이상을 하나의 챔버 내에서 연속으로 증착한다. 다층막 증착 공정이 비정상적으로 진행되었을 경우, V-NAND Flash Memory를 제조하기 위한 후속공정에 영향을 미쳐 웨이퍼를 폐기해야 하는 손실을 초래할 수 있다. 본 연구에서는 V-NAND 다층막 증착공정 중에 다층막의 두께를 가상 계측하는 알고리즘을 개발하고자 하였다. 증착공정이 진행될수록 박막의 두께는 증가하여 커패시터 관점에서 변화가 생겨 RF 신호의 진폭과 위상의 변화가 생긴다는 점을 착안하여 증착 공정 중 PECVD 장비 RF matcher와 heater에서 RF 신호의 진폭과 위상을 실시간으로 측정하여 데이터를 수집하고, 박막의 두께와의 상관성을 분석하였다. 이 연구 결과를 토대로 V-NAND Flash memory 제조 품질향상 및 웨이퍼 손실 최소화를 실현하여 제조 시스템을 효율적으로 운영할 수 있는 효과를 기대할 수 있다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.4
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• pp.85-91
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• 2019

In this paper, we propose a new logging and recovery scheme that is suited for the high-performance transaction processing system base on flash memory storage. The proposed scheme is designed by considering flash's I/O characteristic of asymmetric costs between page update/read operations. That is, we substitute the costly update operation with writing and real-time usage of snapshot log, which is for the page-level physical redo. From this, we can avoid costly rewriting of a dirty page when it is evicted form a buffering pool. while supporting efficient revery procedure. The proposed scheme would be not lucrative in the case of HDD-based system. However, the proposed scheme offers the performance advance sush as a reduced number of updates and the fast system recovery time, in the case of flash storage such as SSD (solid state drive). Because the proposed scheme can easily be applied to existing systems by saving our snapshot records and ordinary log records together, our scheme can be used for improving the performance of upcoming SSD-based database systems through a tiny modification to existing REDO algorithms.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.1
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• pp.166-174
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• 2010

SSDs are one of the best media to support portable and desktop computers' storage devices. Their features include non-volatility, low power consumption, and fast access time for read operations, which are sufficient to present flash memories as major database storage components for desktop and server computers. However, we need to improve traditional index management schemes based on B-Tree due to the relatively slow characteristics of flash memory operations, as compared to RAM memory. In order to achieve this goal, we propose a new index management scheme based on a compressed hot-cold clustering called CHC-Tree. CHC-Tree-based index management improves index operation performance by dividing index nodes into hot or cold segments and compressing pointers and keys in the index nodes and clustering the hot or cold segments. The offset compression techniques using unused free area in cold index node lead to reduce the number of slow erase operations in index node insert/delete processes. Simulation results show that our scheme significantly reduces the write and erase operation overheads, improving the index search performance of B-Tree by up to 26 percent, and the index update performance by up to 23 percent.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.10a
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• pp.58-61
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• 2010

In this paper, we research the method for HDD I/O Performance improvement by Filter Driver &NAND FLASH Memory. We analyze the effect of the operation of the Device Driver & NAND FLASH Memory and propose the method for the HDD I/O Performance improvement.

• Journal of Digital Contents Society
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• v.13 no.1
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• pp.75-81
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• 2012

SSDs(Solid State Drives) have many attractive features such as high performance, low power consumption, shock resistance, and low weight, so they replace HDDs to a certain extent. An SSD has FTL(Flash Translation Layer) which emulate block storage devices like HDDs. A garbage collection, one of major functions of FTL, effects highly on the performance and the lifetime of SSDs. However, there is no de facto standard for new garbage collection algorithms. To solve this problem, we propose trace driven offline optimal algorithms for garbage collection of FTL. The proposed algorithm always guarantees minimal number of erase operation. In addition, we verify our proposed algorithm using TPC trace.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.47 no.5
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• pp.35-40
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• 2010

NAND flash memory has been widely used than traditional HDD in PDA and other mobile devices, embedded systems, PC because of faster access speed, low power consumption, vibration resistance and other benefits. DiskSim and other HDD simulators has been developed that for find improvements for the software or hardware. But there is a few Linux-based simulators for NAND flash memory and SSD. There is necessary for Windows-based NAND flash simulator because storage devices and PC using Windows. This paper describe for development of simulator-NFSim for FTL performance analysis in NAND flash. NFSim is used to measure performance of various FTL algorithms and FTL wear-level. NAND flash memory model and FTL algorithm developed using Windows Driver Model and class for scalability. There is no need for another tools because NFSim using graph tool for data measure of FTL performance.

• Journal of Digital Contents Society
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• v.12 no.2
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• pp.141-150
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• 2011

Recently the Solid State Drive (SSD) is widely used for storage system of various mobile devices. In this case, existing buffer replacement algorithms based on the hard disk do not consider characteristics of flash memory, so it caused performance degradation of the system. This paper proposes a novel buffer replacement policy called ABM (Asymmetric Buffer Management) policy. ABM policy separates read and write buffer space and applies different replacement unit and replacement algorithm for each buffer. In addition, write buffer delay scheme and dynamic size adaptation algorithm is applied for better performance. ABM outperforms other replacement policies, especially ABM-LRU-CLC shows 32% better performance than normal LRU policy.

• Journal of KIISE
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• v.42 no.1
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• pp.107-113
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• 2015

In a database system, updates on pages that are made by a transaction should be stored in a secondary storage before the commit is complete. Generic secondary storages have volatile DRAM caches to hide long latency for non-volatile media. However, as logs that are only written to the volatile DRAM cache don't ensure durability, logging latency cannot be hidden. Recently, a flash SSD with capacitor-backed DRAM cache was developed to overcome the shortcoming. Storage devices, like those with a non-volatile cache, will increase transaction throughput because transactions can commit as soon as the logs reach the cache. In this paper, we analyzed performance in terms of transaction throughput when the SSD with capacitor-backed DRAM cache was used as log storage. The transaction throughput can be improved over three times, by committing right after storing the logs to the DRAM cache, rather than to a secondary storage device. Also, we showed that it could acquire over 73% of the ideal logging performance with proper tuning.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.