• Proceedings of the Korean Nuclear Society Conference
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• 1995.10a
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• pp.358-363
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• 1995

A study on passive cooling systems for concrete containment of advanced pressurized water reactors has been performed. The proposed passive containment cooling system (PCCS) consist of (1) condenser units located inside containment, (2) a steam condensing pool outside containment at higher elevation, and (3) downcommer/riser piping systems which provide coolant flow paths. During an accident causing high containment pressure and temperature, the steam/air mixture in containment is condensed on the outer surface of condenser tubes transferring the heat to coolant flowing inside tubes. The coolant transfers the heat to the steam condensing pool via natural circulation due to density difference. This PCCS has the following characteristic: (1) applicable to concrete containment system, (2) no limitation in plant capacity expansion, (3) efficient steam condensing mechanism (dropwise or film condensation at the surface of condenser tube), and (4) utilization of a fully passive mechanism. A preliminary conceptual design work has been done based on steady-state assumptions to determine important design parameter including the elevation of components and required heat transfer area of the condenser tube. Assuming a decay power level of 2%, the required heat transfer area for 1,000MWe plant is assessed to be about 2,000 ㎡ (equivalent to 1,600 of 10 m-long, 4-cm-OD tubes) with the relative elevation difference of 38 m between the condenser and steam condensing pool and the riser diameter of 0.62 m.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.272-272
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• 2013

The attractive features of photosynthetic reaction center proteins for energy application make them useful in solar energy conversion to hydrogen fuel or electrical energy. Almost unity charge separation quantum yield and its rapid speed of ~1ns, absorbance region in visible light (480~740 nm) and high proportion of photosynthetically active solar energy of 48.5% allowed photosystem1 to exploited as a bio-material for photo-energy devices. Directionality of photosystem1 in electron transfer can solve main problem in two-step water splitting process where back reaction deteriorates the overall efficiency. In the study, photosystem1 was extracted from spinach and the photo-induced excited electron in the reaction center was utilized in various field of light energy application. First, hydrogen evolving system realized by photodeposition of platinum at the end of the electron transfer chain, with combining specific semiconductor to oxidize water in the first step of Z-scheme. The evaluation by gas-chromatography demonstrated hydrogen evolution through the system. For the further application of photoelectrical material on electrode, photosystem1 have been controlled by copper ion, which is expected to assemble photosystem in specific orientation followed by maximized photoelectrical ability of film. The research proposed concrete methods for combining natural protein and artificial materials in one system and suggested possibility of designing interface between biological and inorganic materials.

• Nuclear Engineering and Technology
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• v.31 no.5
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• pp.486-497
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• 1999

The local heat transfer coefficient is experimentally investigated for the reflux condensation in a countercurrent flow between the steam-air mixture and the condensate, A single vertical tube has a geometry which is a length of 2.4m, inner diameter of 16.56mm and outer diameter of 19.05mm and is made of stainless steel. Air is used as a noncondensible gas. The secondary side has a shape of annulus around vertical tube and the lost heat by primary condensation is transferred to the coolant water. The local temperatures are measured at 11 locations in the vertical direction and each location has 3 measurement points in the radial direction, which are installed at the tube center, at the outer wall and at the coolant side. In three different pressures, the 27 sets of data are obtained in the range of inlet steam flow rate 1.348∼3.282kg/hr, of inlet air mass fraction 11.8∼55.0%. The investigation of the flooding is preceded to find the upper limit of the reflux condensation. Onset of flooding is lower than that of Wallis' correlation. The local heat transfer coefficient increases as the increase of inlet steam flow rate and decreases as the increase of inlet air mass fraction. As an increase of the system pressure, the active condensing region is contracted and the heat transfer capability in this region is magnified. The empirical correlation is developed by 165 data of the local heat transfer. As a result, the Jacob number and film Reynolds number are dominant parameters to govern the local heat transfer coefficient. The rms error is 17.7% between the results by the experiment and by the correlation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.86-89
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.723-726
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• 2002

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Journal of computational fluids engineering
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• v.5 no.1
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• pp.33-42
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• 2000

The LiBr-H₂O absorption process on a horizontal tube has been analyzed numerically. The flow field, which was calculated in the authors' previous study by solving the fully elliptic Navier-Stokes equations with accurate free-surface-tracking method, is used to solve the temperature and concentration distributions in the absorption film. With the assumption that the absorbent is linear, calculations have been made for various inlet temperature and flow-rate conditions. For low inlet temperature, the absorption rate is large in the upstream region but the mean temperature also increases and as a result the absorption decreases as the film flows to downstream while high-inlet-temperature case does the opposite. The difference in the absorption rate due to the inlet temperature change becomes smaller in the downstream than that in the upstream. For large flow rate, the heat transfer to the wall becomes poor due to the thick film and so does the absorption rate. The analyses have also been carried out for multiple tube arrangement and the results show that the absorption rate converges after a few tube rows.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.101-104
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• 2002

Abstract We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.10
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• pp.3304-3312
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• 1996

An experimental study on the convective heat transfer characteristics was performed for a two-dimensional wall attaching offset jet(WAOJ). Thermochromic liquid crystal was used to measure the plate wall temperature. The Nusselt number was measured for Reynolds numbers from 6, 500 to 39, 000, and the offset ratios from 0.5 to 15. The maximum Nusselt number point coincides with the time-averaged reattachment point and Nusselt number decreases monotonically after the jet reattaches on the wall. In the recirculation region Nusselt number minimize near the upstream corner and then increases as X/D decreases to vanishes. This suggests the existence of secondary vortices, causing an additional mixing of the flow in the corner. The correlations between the local Nusselt number and Reynolds number, Re, offset ratio, H/D, and streamwise distance, X/D are presented.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.100-108
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• 1995

Heat transfer plays a critical role in determining interface location and shape in ZMR process, which is used for the fabrication of silicon - on - insulator structure. In this work, the two - dimensional pseudo - steady - state ZMR model has been developed that can simulate the heat transfer process during ZMR process. It contains the radiation, convection and conduction heat transfer and determines the interface shapes. Numerical solutions from the model include flow field in the molten zone, temperature field in the full SOl structure and the location of solid/liquid interface in the silicon thin film and silicon substrate. We examined the effects of the various system parameters on the temperature profiles and the interface shape.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.511-515
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• 1995

Since much studies have been performed concerning the electrochemical behaviors and the practical applications of PB based devices, little has yet reported to investigate the best condition for the preparation for PB thin films. As considered some factors(peak shape, peak current, and peak separation) from the i-V curves, the optimal condition in the film growth were investigated under various immersion solutions. An electron-transfer processes of Fe2+/Fe3+ and Fe(CN)63-/4- redox couples were considered by measuring the observed currents as a function of the rotation velocity. The standard heterogeneous electron-transfer rates for these films and bare Au disc electrode in 10-3 M Fe2+/Fe3+ solution, applied at +0.65 V vs. SCE, were 6.14 × 10-3 and 7.78 × 10-3 cm/s, respectively, obtained using a rotating disc electrode. In case of the addition of potassium ion, the rate constants for these Fe2+/Fe3+ system on thin films of PB and bare electrode were given a little high values. The electron transfer rate for 10-3 M Fe(CN)63-/4- were 4.55 × 10-3 and 6.84 × 10-3 cm/s, respectively. The conductivity as directly determined during obtained the voltammogram, was 2.2 × 10-7 (Ω·cm)-1. This value is similar magnitude to that calculated from bulk sample.