• 한국초전도ㆍ저온공학회논문지
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• 제21권4호
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• pp.29-33
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• 2019

2G HTS wire with high engineering current density is desired for applications where compact, high power density superconducting equipment is important. We have succeeded in enhancing engineering current density of commercial SuperOx 2G HTS wire based on GdBCO by increasing the HTS layer thickness without fast degradation of the HTS film microstructure. This was possible after improving the temperature uniformity along the HTS film deposition zone. In particular, the wire engineering current density was increased from 700-770 A/㎟ (for a 65 ㎛-thick wire without stabilisation) or 430-480 A/㎟ (for a 105 ㎛-thick stabilised wire) at the beginning of this study to almost 1200 A/㎟ (for a 67 ㎛-thick wire without stabilisation) or 770 A/㎟ (for a 107 ㎛-thick stabilised wire) at completion of this study.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권12호
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• pp.558-560
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. Carbon films have been grown on silicon substrates using the method of chemical process. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by elctrolysis of methanol was identified as the hydrogenated carbon film with porous structure. Deposition parameters for the growth of the carbon films were current density, methanol liquid temperature. We electrical resistance and surface morphology of carbon films formed various conditions specified by deposition parameters. It was clarified that the high electrical resistance carbon films with smooth surface morphology are grown when a distance between the electrodes is relatively wider. We found that the electrical resistance in the films independent of both current density and methanol liquid temperature. The temperature dependence of the electrical resistance in the low resistance carbon films is different from one obtained in graphite..

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1428-1429
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• 2009

Compared to the indium zinc oxide (IZO) film fabricated by micro-powder target, the IZO film with nano-powder target exhibited improved optoelectronic properties of wide bandgap, high transmittance, surface uniformity, and low sheet resistance due to the high film density.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.157-162
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• 2003

For fabricating high T$\sub$c/ superconducting deposition film, novel electrophoretic deposition (EPD) technique applied to deposit surface charged particles on metal substrate with only d.c field has been studied. However, the electric properties of superconducting film could not be improved easily by this way, because the particles of EPD film were usually deposited randomly on metal substrate without any directional orientation affected to its critical current density. For the purpose of obtaining partcle orientation on the EPD films, the new method modified by a.c. assisted field to the conventional electrophoresis system was investigated to improve the particle deposition density and to increase the contacting area among the particles with highly oriented particle deposition of BSCCO superconducting film.

• Korean Chemical Engineering Research
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• 제59권2호
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• pp.254-259
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• 2021

고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 광학적 및 전기적 특성을 소스파워와 압력을 변화하며 분석하였다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율은 2단계 증착 메커니즘의 작용으로 소스파워가 증가할수록 증가하였고 압력이 증가할수록 감소하였다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율 변화는 불화탄소막의 광학적 및 전기적 특성 변화에 직접적으로 영향을 끼쳤다. 즉, 불화탄소막의 굴절률은 F/C 비율 변화 양상과는 달리 소스파워가 증가할수록 감소하였고 압력이 증가할수록 증가하였는데 이는 F/C 비율이 증가할수록 전자분극작용이 억제되고 불화탄소막의 망상조직이 약화되어 굴절률이 감소하기 때문이었다. 불화탄소막의 비저항은 F/C 비율 변화와 같이 소스파워가 증가할수록 증가하였고 압력이 증가할수록 감소하였는데 이는 F/C 비율이 증가할수록 주변 전자들을 반발하려는 경향이 강해져서 비저항이 증가하기 때문이었다. 고밀도 C4F8 플라즈마에서 증착된 불화탄소막의 F/C 비율 조절로 불화탄소막의 광학적 및 전기적 특성을 직접적으로 변화할 수 있으므로 불화탄소막이 반도체소자제조공정에서 저 유전상수 물질 대체용으로 가능할 수 있음이 예상된다.

• 한국표면공학회지
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• 제43권6호
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• pp.260-265
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• 2010

STD 61 steel has been widely used for tools, metallic mold and die for press working because of its favorable mechanical properties such as high toughness, and creep strength as well as excellent oxidation resistance. The STD 61 tool steel coated with TiN and ZrN by sputtering results in improvement of wear and corrosion resistance. In this study, surface characteristics of TiN and ZrN film coated STD 61 by sputtering were studied by using FE-SEM, EDS, XRD, and XRR and nanoindentation tests. From the results of surface characteristics of coated specimen, the ZrN coated surface showed finer granular than that of TiN coated surface. The coated layer structures of ZrN and TiN were grown to (111) and (200) preferred orientation. From the results of XRR test for surface roughness, density and growth rate of coating film, surface roughness and growth rate of ZrN coated film revealed lower values those of TiN coated film, whereas density of ZrN coated film showed higher values than that of TiN coated film. From the nanohardness and elastic modulus test, nanohardness value and elastic modulus of ZrN coated film became higher than those of TiN coated film.

• 대한방사선기술학회지:방사선기술과학
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• 제4권1호
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• pp.45-53
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• 1981

In examinations of the stomach roentgenography, it is imperative to obtain adequate film density throughout all its different regions. Therefore, it is necessary to use more sophiscated exposure techniques. In order to achieve these purpose, the radiologic technologists must be measured abdominal thickness in variations with patient positions. In consideration of these problem, the author was made an experiment on correction method of kVp and mAs by abdominal thickness in roentgenography of the stomach. The results were summarized as follws: 1. When the patient in erect position, abdominal thickness was the most thickened at the level of 3cm inferior to umbilicus without regard to body habitus and it was the most thickened at the level of 3cm superior to umbilicus in prone and supine position. 2. As a result of measuring film density for stomach, the adequate film density was represented from 0.70 to 2.49 in erect position and $0.28{\sim}1.18$ in supine position, $0.5{\sim}2.45$ in prone position. 3. In order to obtain uniform film density in 1.25, the correction factor for kVp by abdominal thickness was represented average ${\pm}4.5kVp\;per\;{\pm}1cm$ in a fixed 50 mAs, and average ${\pm}3.9kVp\;per\;{\pm}1cm$ in a fixed 100mAs. 4. In order to obtain uniform film density in 1.25, the correction factor for mAs by abdominal thickness was represented average ${\pm}30.9%\;per\;{\pm}1cm$ in a fixed 80 kvp and ${\pm}26.9%\;per\;{\pm}1cm$ in a fixed 100kVp.

• 한국재료학회지
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• 제17권11호
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.442-442
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• 2014

Although electrochemical capacitors (ECs), also known as supercapacitors or ultracapacitors, is one of the most promising energy-storage devices because of its high power density, super-high cycle life, and safe operation. We herein report a synthesis of graphene-based flexible films by kneading method. Thus, a device can be readily made by sandwiching a polymer membrane included ionic liquid electrolytes between two identical graphene-based flexible films. Devices made with these electrodes exhibit ultrahigh energy density values while maintaining the high power density and excellent cycle stability of ECs. Moreover, these ECs maintain excellent electrochemical attributes under high mechanical stress and thus hold promise for high-energy, flexible electronics.

• 한국재료학회지
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• 제9권6호
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• pp.547-550
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• 1999

Optical and electrical properties of MgO-CaO films as a protective layer for AC plasma display panel were studied. When the [(CaO/(MgO+CaO)] ratio of evaporation starting materials was optimum composition, 0.1, firing voltage and memory margin of the film were 176V and 0.5, respectively. When [CaO/(CaO+MgO)] was 0, 0.1 and 0.2, memory margin was 0.39, 0.5 and 0.41, respectively, and surface roughness of films was $27.7\AA$, $21.1\AA$ and $40.3\AA$, respectively. It was thought that memory margin had a reverse-relation with surface roughness. The density of film was calculated by measuring the refractive index of film. The density of MgO film was 3.21g/㎤ and the density of film, when [CaO/(CaO+MgO)] was 0.1, was 3.632g/㎤. The mixture of MgO-CaO films showed a good transmittance property in the visual range.