• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
• /
• pp.289-292
• /
• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including CH$_4$ concentrations, Oxygen additions, Operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. The best crystallinity of the finn at 3% methane concentration addition of oxygen to the CH$_4$-$H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure and time, the growth rate and crystallinity were increased simultaneously.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2012년도 춘계학술대회 논문집
• /
• pp.577-578
• /
• 2012

• 한국진공학회지
• /
• 제4권S1호
• /
• pp.81-86
• /
• 1995

Aluminum has been deposited selectively on TiN surfaces in the presence of Si, SiO2 from Dimethyethylamine Alane(DMEAA). The film properties of the deopsited AI film were determined by various methods(SEM, Auger, UV-photospectrometer, Four point-probe, XRD). The effect of in-situ H2 plasma precleaning was studied. The effect of gap distance, pressure and temperature on the properties(crystallinity, resistance, grain size, morphology) of AI film and on the growth rates was investigated. It was found that the plasma precleaning promotes the growth rate and there exists optimum thmperature for maximum growth rate.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
• /
• pp.95-97
• /
• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• 폴리머
• /
• 제25권2호
• /
• pp.208-217
• /
• 2001

테레프탈산 (terephthalic acid), 비스페놀에이 (bisphenol-A)와 에틸렌글리콜 (ethyleneglycol)로 제조된 PET/BPA 공중합체를 용융 압축시켜 필름을 만들어 얼음물에 급냉시켰다. 이 공중합체 필름을 모세관 레오메타로 고상 압출시켜 연신 필름을 만들었다. 이 연신된 필름의 수축율, 결정성, 형태학, 열적, 동역학적 및 기계적 특성을 조사하였다. 공중합체 필름의 융점은 순수 폴리에틸렌테레프탈레이트(PET)보다 낮게 나타났다. 또한 결정화도와 밀도는 연신비와 연신속도의 증가와 더불어 증가하였으나, 연신온도 증가와 더불어 감소하였다. 공중합체 필름의 인장강도와 인장탄성률은 연신비 증가와 더불어 증가하였고, 연신온도 증가에 따라 감소하였다. 연신된 공중합체 필름의 수축율은 연신비와 연신속도가 증가할수록 감소하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권11호
• /
• pp.596-602
• /
• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• 한국의류학회지
• /
• 제2권2호
• /
• pp.245-252
• /
• 1978

In order to obtain some information for solvent dyeing, polyethylene terephthalate (PET) was treated with water, tetrachloroethylene yarn (TCE), and water/TCE emulsion for three hours at the temperatures from $40^{\circ}$ to $140^{\circ}C$. The change of fine structure of substratum by measuring the shrinkage, the degree of crystallinity, the stress relacxation modulus and Young's modulus. The P.E.T. film was also treated in water (at $140^{\circ}C$) for 4 hours to stabilize the substratum. By means of film roll cyliderical method, the Disperse Blue 27 was diffused. Then, calculated the diffusion coefficient and examined the application of WLF equation. However, the temperature dependence of the shrinkage could be explain with WLF equation, the diffusion coefficient couldn't be applied the WLF equation when the substratum was stabilized. From the result, the effects on shrinkage were in the order of water

• 센서학회지
• /
• 제13권3호
• /
• pp.252-257
• /
• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.

• 한국재료학회지
• /
• 제14권2호
• /
• pp.121-125
• /
• 2004

Nickel oxide (NiO) thin films were deposited on Si(100) substrates at room temperature by RF magnetron sputtering from a NiO target. The effects of plasma gas and RF power on the crystallographic orientation and surface morphology of the NiO films were investigated. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were employed to characterize the deposited film. It was found that the type of plasma gases affected the crystallographic orientation, deposition rate, surface morphology, and crystallinity of NiO films. Highly crystalline NiO films with (100) orientation were obtained when it was deposited under Ar atmosphere. On the other hand, (l11)-oriented NiO films with poor crystallinity were deposited in $O_2$. Also, the increase in RF power resulted in not only higher deposition rate, larger grain size, and rougher surface but also higher crystallinity of NiO films.

• 마이크로전자및패키징학회지
• /
• 제26권2호
• /
• pp.15-21
• /
• 2019

원자층 증착법(ALD: atomic layer deposition)으로 $150^{\circ}C$에서 성장된 zinc oxide (ZnO) 초박막의 두께 변화에 따른 구조적, 전기적, 광학적 특성을 조사하였다. ZnO 박막을 증착하기 위해 금속 전구체와 반응물로 각각 diethylzinc와 deionized water를 사용하였다. ALD 사이클 당 성장률은 $150^{\circ}C$에서 약 0.21 nm/cycle로 일정 하였으며, 50 사이클 이하의 샘플들은 초기 ALD 성장 단계에서 상대적으로 얇은 두께로 인하여 비정질 성질을 갖는 것으로 보였다. 100 사이클에서 200 사이클로 두께가 증가함에 따라 ZnO 박막의 결정성이 증가하였고 hexagonal wurtzite 구조를 보였다. 또한, ZnO 박막의 입자 크기가 ALD 사이클의 수의 증가에 따라 증가되었다. 전기적 특성 분석 결과 박막 두께의 증가에 따라서 비저항 값이 감소하였으며, 이는 박막 두께 증가에 따른 입자 크기 증가 및 결정성 개선으로 더 두꺼운 ZnO 박막에서 입자 경계의 농도 감소와 상관 관계가 있음을 알 수 있었다. 광학적 특성 분석 결과 근 자외선 영역 (300 nm~400 nm)에서의 밴드 엣지 흡수가 증가 및 이동되었는데 이 현상은 ZnO 박막 두께의 증가에 따른 캐리어 농도의 증가가 기인 한 것으로, 이 결과는 박막 두께의 증가에 따른 저항률 감소와 잘 일치한다. 결과적으로 박막의 두께가 증가하면 막 면의 응력이 완화되어 밴드 갭이 감소하고 결정성 및 전도성이 향상됨을 알 수 있었다.