• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.100-102
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• 2013

Magnetron-sputtering법을 사용하여 기존에 연구하였던 CrAlN (Cr 7：Al 3)박막에 Si를 첨가하여 Si의 함량 변화에 따라 미세구조와 화학적 결합상태, 온도저항계수(TCR) 및 산화저항의 영향과 기계적특성 개선을 통한 multi-functional heater resistor layer로써의 가능성을 연구하였다. CrAlSiN 박막의 Si 함량에 변화에 따라 온도저항계수 변화를 확인하였으며 X-선 회절 분석(XRD) 패턴 분석결과 CrAlSiN 박막의 결정구조가 Bl-NaCl 구조를 가지고 있는 것을 확인하였으며 SEM과 AFM을 통한 표면 및 미세구조 분석결과 Si의 함량이 증가할수록 입자가 조밀해짐을 알 수 있었다. 최근 digital priting technology의 핵심 기술로 부각되고 있는 inkjet priting technology는 널리 태양전지뿐만 아니라 thin film process, lithography와 같은 반도체 공정 기술에 활용 할 수 있기 때문에 반도체 제조장비에도 사용되고 있으며, 현재 thermal inkjet 방식을 사용하고 있다. Inkjet printing technology는 전기 에너지를 잉크를 배출하기 위해 열에너지로 변환하는 thermal inkjet 방식을 사용하고 있는데, 이러한 thermal inkjet 방식은 기본적으로 전기저항이 필요하지만 electrical resistor layer는 잉크를 높은 온도에서 순간적으로 가열하기 때문에 부식이나 산화 등의 문제가 발생할 수 있어 이에 대한 보호층을 필요로 한다. 하지만, 고해상도, 고속 잉크젯 프린터, 대형 인쇄 등을 요구되고 있어 저 전력 중심의 잉크젯 프린터의 열효율을 방해하는 보호층 제거에 필요성이 제기되고 있다. 본 연구는 magnetron-sputtering을 사용하여 기존의 CrAlN 박막에 Si를 합성하여 anti-oxidation, corrosion resistance 그리고 low temperature coefficient of resistance 값을 갖는 multi-functional heater resistor layer로써 CrAlSiN 박막의 Si 함량에 따른 효과에 초점을 두었다. 본 실험은 CrAlN 박막에 Si 함량을 4~11 at%까지 첨가시켜 함량의 변화에 따른 특성변화를 확인하였다. 함량이 증가할수록 amorphous silicon nitride phase의 영향으로 박막의 roughness는 감소하였으며 XRD 분석결과 (111) peak의 Intensity가 감소함을 확인하였으며 SEM 관찰시 모든 박막이 columnar structure를 나타내었으며 Si함량이 증가할수록 입자가 치밀해짐을 보여주었다.Si함량이 증가할수록 CrAlN 박막에 비하여 면저항은 증가하였으며 TCR 측정결과 Si함량이 6.5 at%일 때 가장 안정한 TCR값을 나타내었다. Multi-functional heater resistor layer 역할을 하기 위해서, CrAlSiN 박막의 원소 분포, 표면 거칠기, 미세조직, 전기적 특성 등을 조사하였다. CrAlN 박막의 Si의 첨가는 크게 XRD 분석결과 주상 성장을 억제 할 수 있으며 SEM 분석을 통하여 Si 함량이 증가할수록 Si3N4 형성이 감소하며 입자크기가 작아짐을 확인하였다. 면저항의 경우 Si 함량이 증가함에 따라 높은 면저항을 나타내었으며 Si함량이 6.5 at%일 때 가장 낮은 TCR 값인 3120.53 ppm/K값을 보였다. 이 값은 상용되고 있는 heater resistor보다 높지만, CrAlSiN 박막이 더 우수한 기계적 특성을 가지고 있기 때문에 hybrid heater resistor로 적용할 수 있을 것으로 기대된다.

• Journal of the Korean Applied Science and Technology
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• v.31 no.1
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• pp.44-49
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• 2014

We were investigated by cyclic voltammetry to the stability through the electrochemical characteristics of phospholipid(L-${\alpha}$-phosphatidylethanolamine, LAPE) monolayer LB films. LAPE monolayer LB films was deposited by the LB method on the indium tin oxide(ITO) glass. The electrochemical properties was measured by cyclic voltammetry with a three-electrode system in 0.5 N, 1.0 N, 1.5 N and 2.0 N $KClO_4$ solution. The measuring range is continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s was set. As a result, LB monolayer films of LAPE was appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient (D) of LAPE was calculated 195, 15.9, 5.75, 1.38 and $0.754cm^2s^{-1}{\times}10^{-9}$ at 0.01 N, 0.05 N, 0.10 N, 0.15 N and 0.20 N $KClO_4$ solutions, respectively.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.254-257
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• 2007

TiN coating on tool steel has been widely used for the improvement of durability of tools. In this work, radical nitriding(RN) is carried out on SKD61 at $450^{\circ}C$ for 5 hours in the ammonia gas pressure $2.7{\times}10^3\;Pa$. The TiN coating is carried out by arc ion plating(AIP) with the process parameters: arc power 150 A, bias voltage -50V, coating time 40 minutes and nitrogen gas pressure $4{\times}10^3\;Pa$. Hardness, elastic modulus, friction coefficient and adhesion of TiN coating on substrates of both TiN/SKD61 and TiN/RN SKD61 coatings are investigated comparatively. The primary crystalline faces of TiN surface are(200) and(111) for TiN/SKD61 and TiN/RN SKD61 respectively. In addition to the primary phase, Fe phase exists in TiN/SKD61 coating, but not in TIN/RN SKD61. The hardness of TiN/RN SKD61 is about 700 Hv, 250 Hv(56%) higher than that of TiN/SKD61 at the near interface of TiN and substrates. At the TiN surface, hardness of TiN/RN SKD61 is 2,149 Hv, 71 Hv(3%) higher than that of TiN/SKD61. The elastic modulus of TiN coating is improved to 26.7 GPa(6%) by radical nitriding. The adhesion is improved by the RN coating showing no spalling. buckling and chipping on the scratch test track which are shown on the non-RN TiN/SKD61.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• Journal of the Korean Chemical Society
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• v.41 no.4
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• pp.180-185
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• 1997

Zinc, cadmium, lead and copper were simultaneously determined by depositing metals at - 1.200 V vs. a Ag/AgCl(sat. KCl) reference electrode for 150 seconds on a hanging mercury drop electrode(HMDE) or a thin mercury film electrode(TMFE), followed by scanning towards anodic direction using differential pulse voltammetric(DPASV) and square wave voltammetric(SWASV) techniques. The linear calibration curves were obtained for four metal ions simultaneously determined by DPASV with a HMDE in the concentration range between 20 and 100 ppb. However, the linear calibration plots were obtained only for $Cd^{2+}$ and $Pb^{2+}$ in the simultaneous determinations with a TMFE in the concentration range up to 100 ppb using DPASV and up to 10 ppb using SWASV. DPASV with a TMFE was about 15 times more sensitive than DPASV with a HMDE for simultaneous determinations of $Cd^{2+}$ and $Pb^{2+}$. SWASV was about 5 times more sensitive than DPASV at a TMFE. Concentrations of zinc in seven different sediment samples determined by DPASV with a HMDE and inductively coupled plasma-mass spectrometry were compared, resulting with an excellent correlation coefficient of 0.9993 and with no significant difference between two methods after t-test.

• Polymer(Korea)
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• v.36 no.4
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• pp.486-493
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• 2012

Photocurable sulfonated polyimide (SPI) polyelectrolyte containing chalcone group was prepared and fabricated on an alumina electrode pretreated with chalcone-containing silane-coupling agent. SPI films with bis(tetramethyl)ammonium 2,2'-benzidinedisulfonate ($Me_4N$-BDS)/4,4'-diaminochalcone (DAC)/pyromellitic dianhydride (PA)= 90/10/100 possessed very linear response(Y = -0.04528X+7.69446, $R^2=0.99675$) and showed resistance changing from 4.48 to $2.1k{\Omega}$ between 20 and 95 %RH. The response time for absorption and desorption measurements between 33 and 94 %RH% was about 79 s, which affirmed the high efficiency of crosslinked SPI film for rapid detection of humidity. A negative temperature coefficient showing $-0.49%RH/^{\circ}C$ was found and proper temperature compensation should be considered in future applications. Moreover, pretreatment of the substrates with chalcone-containing silane-coupling agent was performed to improve the water durability and the stability of the humidity sensors at a high humidity and a high temperature and long-term stability for 480 h. The crosslinked SPI films anchored to electrode substrate could be a promising material for the fabrication of efficient humidity sensors with superior characteristics compared to the commercially available sensors.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.60-65
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• 2009

We performed a study on optical properties of $BaSm_2Ti_4O_{12}$ thin films by vacuum ultra violet spectroscopic ellipsometry in the $0.92{\sim}8.6\;eV$ energy range. For the analysis of the measured ellipsometric spectra, a 5-layer model was applied where optical property of the $BaSm_2Ti_4O_{12}$ layer was well represented by a Tauc-Lorentz dispersion function. Our analysis clearly showed new structure in high energy region at about 7.5 eV Consistent changes of refractive index & extinction coefficient of the $BaSm_2Ti_4O_{12}$ thin film by the growth and annealing temperatures were also confirmed.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.197-202
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• 2001

M $g_{1-x}$ Z $n_{x}$O thin films with various composition x of ZnO were fabricated by a RF magnetron sputtering method, which is expected to improve the electro-optical properties of the conventional MgO protective layer for AC-PDP. Test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer have been fabricated in order to investigate the effects of ZnO doping on the electrical characteristics of devices such as the discharge voltages and the memory gain. Experimental results revealed that test panels with the $Mg_{1-x}$Z $n_{x}$O(x=0.5at%) protective layer show lower firing and sustain voltages than those seen in panels with MgO protective layer by 20V. resulting in an increasement of the memory coefficient. In addition, it was found that test panels with the $Mg_{1-x}$Z $n_{x}$O protective layer show higher discharge intensity, i. e., higher plasma density, compared with panels with MgO protective layer.ve layer.layer.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.3
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• pp.404-410
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• 1989

Friction and wear tests were conducted with several different ceramics sliding against ceramic and metal couples with and without lubricant in a two disk type sliding machine. The purpose was to know the tribological properties of ceramics. With very different physical and chemical properties of ceramics compared to metal, the tribological properties of ceramics should be defined in detail. Among them, the wear and friction with same or different couple is very important. Also the lubrication of ceramic is one of the major area to be studied. From this research, SiC, SI$_{3}$N$_{4}$ and ZrO$_{2}$ were slid against SiC, AISI 4340 and bronze under various sliding condition. It was found that the friction and wear of ceramics are strongly dependent on the sliding condition. For unlubricated sliding against SiC, ZrO$_{2}$ shows low wear and friction coefficient over wide lange of load, but with lubricated sliding, SiC shows better performance whatever lubricants were used. Also the effect of lubricant depended upon the material properties of sliding pairs. The general tribological properties of ceramics were not correlated with chattering and noise at low load but it could be reduced or avoided effectively by using lubricants. SiC and Si$_{3}$N$_{4}$ slid against SiC have transition from mild to severe wear at high load but ZrO$_{2}$-SiC and SiC-steel have not. Wear debris formed on the contact area of SiC couples was main cause of the initiation of transition. At high speed, only ZrO$_{2}$ sliding against SiC has transition of wear by low thermal conductivity.

• Journal of Biosystems Engineering
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• v.41 no.4
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• pp.328-336
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• 2016

Purpose: The heat culture areas of greenhouses have been continuously increasing. In the face of international oil price fluctuations, development of energy saving technologies is becoming essential. To save energy, auxiliary heat source and thermal insulation technologies are being developed, but they lack cost-efficiency. The present study was conducted to save energy by developing a conceptually new semi-basement type greenhouse. Methods: A semi-basement type greenhouse, was designed and constructed in the form of a three quarter greenhouse as a basic structure, which is an advantageous structure to inflow sunlight. To evaluate the performance of the developed greenhouse, a similar structured general greenhouse was installed as a control plot, and heating tests were conducted under the same crop growth conditions. Results: Although shadows appeared during the winter in the semi-basement type greenhouse due to the underground drop, the results of crop growth tests indicated that there were no differences in crop growth and development between the semi-basement type greenhouse and the control greenhouse, indicating that the shadows did not affect the crop up to the height of the crop growing point. The amount of fuel used for heating from January to March was almost the same between the two greenhouses for tests. The heating load coefficients of the experimental greenhouses were calculated as $3.1kcal/m^2{\cdot}^{\circ}C{\cdot}h$ for the semi-basement type greenhouse and $2.9kcal/m^2{\cdot}^{\circ}C{\cdot}h$ for the control greenhouse. Since the value is lower than the double layer PE (polyethylene) film greenhouse value of $3.5kcal/m^2{\cdot}^{\circ}C{\cdot}h$ from a previous study, Tthe semi-basement type greenhouse seemed to have energy saving effects. Conclusions: The semi-basement type greenhouse could be operated with the same fuel consumption as general greenhouses, even though its underground portion resulted in a larger volume, indicating positive effects on energy saving and space utilization. It was identified that the heat losses could be reduced by installing a thermal curtain of multi-layered materials for heat insulation inside the greenhouse for the cultivation of horticultural products by installing thermal curtain of multi-layered materials for heat insulation inside the greenhouse, it was identified that the heat losses could be reduced.