• 한국의류학회지
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• 제16권3호
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• pp.251-256
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• 1992

As a basic expriment to find out the thermal insulation effect of bedding KES-F7 was used to measure. The warmth retaining ratio of the six kinds of filling materials as cotton, wool , silk, down, cotton/polyester was measured, and the infleunce on the warmth retaining ratio of the warmth retaining ratio and humidity by the material was investigated. The results obtained are as follows: 1. The warmth retaining ratio of each filling material was shown to range from $70\%$ to $77\%$ . The warmth retaining ratio of each material preyed to be high in order down> polyester> cotton/polyester>cotton>silk>wool fiber. 2. The warmth retaining ratio of each filling material decreased with the inclose of the humidity The effective reduction rate by filling fiber's was high in order wool>cotton>cotton/polyester>silk>down>polyester material. 3. The warmth retaining ratio of each filling material was shown to be in counter-correlation with the humidity, and the correlation coefficient (r=0.94-0.98) proved to be highly signi-ficant.

• 대한금속재료학회지
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• 제49권2호
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• pp.104-111
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• 2011

An ultrafine grained Mg-9Al-1Zn magnesium alloy with the mean grain size less than $1{\mu}m$ was produced by using high-ratio differential speed rolling. The processed alloy exhibited excellent superplasticity at relatively low temperatures. The micro-forming tests were carried out using a micro-forging apparatus with micro V-grooved shaped dies made of silicon and the micro-formability was evaluated by means of micro-formability index, $R_f$ ($=A_f/A_g$, $A_f$: formed and inflowed area into the V-groove, $A_g$: area of the V-groove). The $R_f$ value increased with temperature up to $280^{\circ}C$ and then decreased beyond $300^{\circ}C$. The decrease of the $R_f$ value at $300^{\circ}C$ was attributed to the accelerated grain coarsening. Increasing the micro-forging pressure increased the $R_f$ values. At a given die geometry, die filling ability decreased as the die position moved away from the die center to the end. FEM simulation predicted this behavior and a method of improving this problem was proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• 한국의류산업학회지
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• 제1권4호
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• pp.387-392
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• 1999

The effects of the ratio of warp diameter to filling diameter (${\beta}$-ratio) and warp thread crash on the crimp factor and the yarn curvature were studied theoretically in this paper. The models of 2/2 twill fabric derived square cloth and sinusoidal curved cloth were used for the theoretical analysis. The crimp factors (C) for the models were given theoretically as follows; (1) Derived square cloth(general equation for b) $$C=\frac{(1+{\beta})({\theta}-sin{\theta})}{(1+{\beta})sin{\theta}+{\alpha}}$$ (2) Sihusoidal curved cloth $$C=\frac{(1+{\beta})sin{\theta}\[1+\{\frac{{\pi}(1-cos{\theta})}{4sin{\theta}}\}^2\]+{\alpha}}{(1+{\beta})sin{\theta}+{\alpha}}-1$$ The curvatures(${\kappa}$) for the models were given theoretically as follows; (1) Derived square cloth $${\kappa}=\frac{2}{d_w+d_f}$$ (2) Sinusoidal curved cloth $${\kappa}=\|{^{\;\;\prime\prime} \atop r}(s)\| \\ where \;s=\frac{p^'}{{\pi}}\(u+\frac{k^2u}{4}+\frac{k^2}{8}sin2u\)$$.

• 한국전산구조공학회논문집
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• 제35권5호
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• pp.299-308
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• 2022

본 논문은 슬로싱 상태에 놓인 포화 상태 액체수소탱크에서 열 유속 및 BOG(Boil-off gas)의 경향을 다루고 있다. 특히, 액체-기체간의 침투 및 혼합에 의한 열 교환에 관심을 두었다. 먼저, VOF(Volume of fluid)와 Eulerian 기반의 다상 유동모델로 모형 슬로싱 실험을 모사하여 압력을 예측하고 계측된 값과 비교하였다. 자유 수면 및 충격 압력 실험 결과와 해석 결과를 비교하였으며, 유체의 속도 예측에서 정확할 수 있음을 간접적으로 증명하였다. 그리고 2차원의 Type-C 원통형 수소탱크를 대상으로 다상열유동해석을 수행하였다. 이때 포화상태에 놓인 액체 및 기체수소를 가정하고, 해석을 통해 각 상간의 혼합에 의한 열 교환의 수준을 확인하고자 하였다. 단, 상간의 열 교환만을 관심으로 두고 있었으므로 질량전달 및 기화모델은 해석에서 제외하였다. 최종적으로 상의 혼합으로 인해 액체수소로 유입되는 열 유속의 기여도에 대하여 정리하였다. 또한 액체수소로 유입되는 열 유속과 집중 질량 기반의 간이식을 통해 BOG 발생량 및 경향을 예측하고 분석하였다.

• 한국결정학회지
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• 제8권1호
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• pp.6-14
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• 1997

제올라이트 X에 $Sr^{2+}$와 $K^+$ 이온이 교환된 $Sr_{31}K_{30}-X$와 $Sr^{2+}$와 $Tl^+$ 이온이 교환된 $Sr_{8.5}Tl_{75}$의 결정구조를 공간군 Fd3로 $21(1)^{\circ}C$에서 단결정 X선 결정학적 방법으로 해석하였다. 각각의 결정은 $Sr(ClO_4)_2$와 (K 혹은 Tl)$NO_3$의 몰 비가 1 : 5인 용액을 사용해서 흐름 법으로 5일 동안 이온 교환시키고 $360^{\circ}C$에서 진공탈수 시켜 두 결정을 얻었다. 이들 결정은 회절강도가 $I>2{\sigma}(I)$인 293개와 351개의 회절반사를 사용하여 최종오차인자가 $R_1=0.072,\;R_w=0.057$과 $R_l= 0.058,\;R_w=0.044$까지 각각 정밀화하였다. $Sr_{31}K_{30}-X$결정에서 $Sr^{2+}$ 이온과 $K^+$ 이온은 모두 다섯 개의 서로 다른 결정학적 자리에 존재하였다. 단위세포당 16개의 $Sr^{2+}$ 이온은 결정학적 자리 I인 D6R의 중심에 각각 위치하고 D6R 모두를 채우고 있다. 나머지 15개의 $Sr^{2+}$ 이온과 17개의 $K^+$ 이온은 큰 동공 속에 있는 결정학적 자리II에 위치하고 세 개의 산소이온이 이루는 평면에서 각각 $0.45{\AA},\;1.06{\AA}$ 큰 동공속으로 이동하여 위치하고 골조산소와 결합거리는 각각 $2.45(1){\AA},\;2.64(1){\AA}$이다. 13개의 $K^+$ 이온은 두 개의 다른 결정학적자리 III'에 위치하며 인접한 산소와의 결합거리는 각각 $2.88(7){\AA}$와 $3.11(10){\AA}$이다. $Sr_{8.5}Tl_{75}-X$에서는 $Sr^{2+}$이온과 $Tl^+$ 이온이 역시 다섯 개의 서로 다른 결정학적 자리에 위치한다. 약 8.5개의 $Sr^{2+}$ 이온은 결정학적 자리 I에 있으며, 15개의 $Tl^+$ 이온은 D6R의 3회 전축상의 소다라이트내에 있는 결정학적 자리 I'에 있다. 이 $Tl^+$ 이온은 골조산소와의 결합거리가 $2.70(2){\AA}$이며 세 개의 산소가 이루는 평면에서 $1.68{\AA}$ 소다라이트내로 이동하여 위치한다. 32개의 $Tl^{+}$ 이온은 결정학적 자리 II에 존재하고 있으며 산소와의 결합거리를 $2.70(1){\AA}$을 유지하면서 큰 동공속으로 $1.48{\AA}$ 이동하여 위치한다. 약 18개의 $Tl^+$ 이온은 결정학적 자리III에, 또 다른 10개의 $Tl^+$ 이온은 결정학적 자리III'에 존재하고 골조 산소와 각각 $2.86(2){\AA},\;2.96(4){\AA}$의 결합거리를 이룬다.