• Title/Summary/Keyword: filament voltage

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The Development of Industrial Magnetron Power Supply (산업용 마그네트론 구동전원 개발)

  • Ryoo, Hong-Je;Kim, Jong-Su;Kim, Su-Jin;Kytykh, D.
    • Proceedings of the KIEE Conference
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    • 2006.10d
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    • pp.222-223
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    • 2006
  • In this paper, the design of power supply for high power magnetron system is studied. For magnetron drive, three kinds of power supply is required for main high voltage, magnet and heating filament. Detail design was accomplished with basic simulation and real system is developing based on basic design.

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The Development of Rapid Battery Charger System (급속 배터리 충전장치 개발)

  • Ryoo, Hong-Je;Kim, Su-Jin;Lee, Hyun-Jeong;Kim, Jong-Su
    • Proceedings of the KIEE Conference
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    • 2006.10d
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    • pp.224-225
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    • 2006
  • In this paper, the design of Power supply for high power magnetron system is stuied. For magnetron drive, three kinds of power supply is required for main high voltage, magnet and heating filament. Detail design was accomplished with basic simulation and real system is developing based on basic design.

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The Design and Implementation of Arc Power supply for Neutral Beam Injection (중성입자빔 가열을 위한 아크 전원 공급장치 설계 및 구현)

  • Lee, Hee-Jun;Shin, Soo-Cheol;Lee, Seung-Gyo;Jung, Yong-Chae;Won, Chung-Yuen
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.6
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    • pp.50-58
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    • 2013
  • The Neutral Beam Injection(NBI) generates ultra-high temperature energy in the tokamak of nuclear fusion. The NBI consists of filament power supply acceleration and deceleration power supply and arc power supply(APS). The APS has characteristics of low voltage and high current. APS generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The case of proposed buck converter used parallel switch because it can increase capacity and decrease conduction loss. When an arc is generated, the NBI chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus buck converter with constant output is the most important design of the output inductor. In this paper, designed APS verified operation of system and stability through simulation and prototype.

A 37.5kV A Class Power Supply for Diagnostic X -ray by High-Frequency Resonant Inverter Type (37.5kVA급 고주파 공진형 인버터식 진단 X선 전원장치)

  • 김학성;유동욱;임근희;완충연
    • Journal of the Korean Institute of Telematics and Electronics B
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    • v.33B no.12
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    • pp.113-121
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    • 1996
  • This paper presents a 37.5kVA (125kVp, 300mA) high frequency inverter type power supply for diagonostic X-ray generator with two HFHV (high-frequency high-voltage) isolating transformers. The output regulations, X-ray tuve voltage and tube current, are obtained by two high frequency inverters with the each other feedback PI controller and operating time switch for selecting shooting time and synchronizing two inverters. The operating modes and design consideration of the proposed power supply are given. Issues in the design of two HFHV isolating transformersfors high volage genrating and filament heating are discussed. Experimental results are presented to verify the performance of the designed power supply for varying load conditions. The proposed apparatus has several advnatages, e.g., the fast rising time of tube voltae, accuracy and reduced component size etc.

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Electrical Bistable Characteristics of Organic Charge Transfer Complex for Memory Device Applications

  • Lee, Chang-Lyoul
    • Applied Science and Convergence Technology
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    • v.24 no.6
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    • pp.278-283
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    • 2015
  • In this work, the electrical bistability of an organic CT complex is demonstrated and the possible switching mechanism is proposed. 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tetracyanoquinodimethane (TCNQ) are used as an organic donor and acceptor, respectively, and poly-methamethylacrylate (PMMA) is used as a polymeric matrix for spin-coating. A device with the Al/($Al_2O_3$)/PMMA:BCP:TCNQ[1:1:0.5 wt%]/Al configuration demonstrated bistable and switching characteristics similar to Ovshinsky switching with a low threshold voltage and a high ON/OFF ratio. An analysis of the current-voltage curves of the device suggested that electrical switching took place due to the charge transfer mechanism.

Start-up Control of LLC Resonant Inverter for Microwave Oven Application (전자레인지용 LLC 공진형 인버터의 기동 제어)

  • Kang, Kyelyong;Kim, Heung-Geun;Cha, Honnyong
    • The Transactions of the Korean Institute of Power Electronics
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    • v.22 no.5
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    • pp.463-468
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    • 2017
  • One of the most critical part for magnetron driving in microwave oven is start-up control. For this, switching frequency of resonant inverter should be carefully controlled in order to supply sufficient power to the filament of the magnetron and to prevent rectifier diode from destruction caused by the excessive voltage across them. This paper proposes a novel start-up control strategy for LLC resonant inverter for microwave oven considering the non-oscillation mode time and the magnetron voltage during the start-up process. The validity of the proposed method is verified through the experiment with 1,200W microwave oven using LLC resonant inverter.

Improved Uniformity in Resistive Switching Characteristics of GeSe Thin Film by Ag Nanocrystals

  • Park, Ye-Na;Shin, Tae-Jun;Lee, Hyun-Jin;Lee, Ji-Soo;Jeong, Yong-Ki;Ahn, So-Hyun;Lee, On-You;Kim, Jang-Han;Nam, Ki-Hyun;Chung, Hong-Bay
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.237.2-237.2
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    • 2013
  • ReRAM cell, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of conductive filament in a solid electrolyte [1,2]. Especially, Chalcogenide-based ReRAM have become a promising candidate due to the simple structure, high density and low power operation than other types of ReRAM but the uniformity of switching parameter is undesirable. It is because diffusion of ions from anode to cathode in solid electrolyte layer is random [3]. That is to say, the formation of conductive filament is not go through the same paths in each switching cycle which is one of the major obstacles for performance improvement of ReRAM devices. Therefore, to control of nonuniform conductive filament formation is a key point to achieve a high performance ReRAM. In this paper, we demonstrated the enhanced repeatable bipolar resistive switching memory characteristics by spreading the Ag nanocrystals (Ag NCs) on amorphous GeSe layer compared to the conventional Ag/GeSe/Pt structure without Ag NCs. The Ag NCs and Ag top electrode act as a metal supply source of our devices. Excellent resistive switching memory characteristics were obtained and improvement of voltage distribution was achieved from the Al/Ag NCs/GeSe/Pt structure. At the same time, a stable DC endurance (>100 cycles) and an excellent data retention (>104 sec) properties was found from the Al/Ag NCs/GeSe/ Pt structured ReRAMs.

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Power-saving Module using Ferroelectric Ceramics for Electronic Ballast (강유전체 세라믹스를 이용한 전자식 안정기용 절전모듈)

  • Shin, Hyun-Yong
    • Journal of the Korea Computer Industry Society
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    • v.6 no.5
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    • pp.741-748
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    • 2005
  • Power saving module which is consisted of ferroelectric ceramic capacitor and time delay switching circuit was installed into electronic ballast in order to enhance energy efficacy and extend life time of fluorescent lamp. The impedance matching of negative resistance characteristics of F/L was optimized with the characteristics of ferroelectric ceramics capacitor to increase the light efficiency of the electronic ballast. The high efficiency of the electronic ballast was achieved by minimizing wasted power at the filament of F/L during the lighting by using the switching function of time delay circuit from preheating mode to non-preheating mode. The life time of F/L was also extended by eliminating the reverse electromotive force using time delay circuits to minimize the impacts to the filament of F/L from unwanted high voltage peaks during light-up period. As the results, the electronic ballast with the first grade energy efficiency was developed using ferroelectric ceramics and time delay module.

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Fabrication and characterization of CaLa2ZnO5 based nanocrystalline materials

  • Hussain, Sk. Khaja;Raju, G. Seeta Rama;Yu, Jae Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.352.2-352.2
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    • 2016
  • In recent times, much effort has been concentrated on trivalent rare-earth ions activated ceramics or oxide phosphors to develop display industries due to their promising applications in optoelectronic devices and field-emission displays. To prepare efficient phosphors, citrate sol-gel method is one of the best synthetic methods. Green and blue emissive CaLa2ZnO5:RE3+ nanocrystalline materials are synthesized by a citrate sol-gel method. After the samples annealing at $1100^{\circ}C$, morphological and structural properties are investigated by scanning electron microscope images and X-ray diffraction patterns, respectively. At low electron beam voltage of <5 kV, the visible photoluminescence properties are obtained. Various concentrations of the RE3+ ions exhibited their characteristic emission peaks at different excitation wavelengths, respectively. Similarly, at high electron beam anodic voltage, the cathodoluminescence properties are studied as a function of acceleration voltage and filament current. The chromaticity coordinates are calculated for the optimized CaLa2ZnO5 nanocrystalline luminescent materials.

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Acceleration Test of Ion Migration in FR-4 PCB Plated with Sn (Sn 표면처리된 FR-4 재질 PCB에서의 이온마이그레이션 가속시험)

  • Hwang, Soon-Mi;Jung, Young-Baek;Kim, Chul-Hee;Lee, Kwan-Hun
    • Journal of Applied Reliability
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    • v.12 no.3
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    • pp.153-163
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    • 2012
  • Recently, as a electronic components are becoming more high-density, so that electronic circuits have smaller pitches between the leads and are more vulnerable to insulation failure. And the reliability of electric insulation has become an ever important issue as device contact pitches and print patterns shrink. Ion migration occurs in highly humid environment as voltage is applied to an installed print circuit. Under highly humid and voltage applied circumstances, electronic components respond to applied voltages by electrochemical ionization of metals, and a conducting filament forms between the anode and cathode across a nonmetallic medium. This leads to short-circuit failure of the electronic component. In thesis, we study acceleration test of ion migration in FR-4 PCB plated with Sn. Voltage applied test of FR-4 PCB circuits plated with Sn was tested in the temperature and humidity environments. As a result of this test, equation of acceleration model was derived.