• Title/Summary/Keyword: field emission properties

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Electrical properties of the Porous polycrystalline silicon Nano-Structure as a cold cathode field emitter

  • Lee, Joo-Won;Kim, Hoon;Lee, Yun-Hi;Jang, Jin;Oh, Myung-Hwan;Ju, Byung-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.1035-1038
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    • 2002
  • The electrical properties of Porous polycrystalline silicon Nano-Structure (PNS) as a cold cathode were investigated as a function of anodizing condition, the thickness of Au film as a top electrode and the substrate temperature. Non-doped 2${\mu}m$-polycrystalline silicon was electrochemically anodized in HF: ethanol (=1:1) mixture as a function of the anodizing condition including a current density and anodizing time. After anodizing, the PNS was thermally oxidized for 1 hr at 900 $^{\circ}C$. Then, 20nm, 30nm, 45nm thickness of Au films as a top electrode were deposited by E-beam evaporator. Among the PNSs fabricated under the various kinds of anodizing conditions, the PNS anodized at a current density of 10mA/$cm^2$ for 20 sec has the lowest turn-on voltage and the highest emission current than those of others. Also, the electron emission properties were investigated as functions of measuring temperature and the different thickness of Au film as a top-electrode.

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Excitation Based Tunable Emissions from the Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ : $Sm^{3+}/Tb^{3+}$ Phosphors for Novel Inorganic LEDs

  • Raju, G. Seeta Rama;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.156-156
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    • 2011
  • Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

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Qantum Transition properties of Si in Electron Deformation Potential Phonon Interacting Qusi Two Dimensional System (준 2차원 시스템에서 전자 변위 포텐셜 상호 작용에 의한 Si의 양자 전이 특성)

  • Joo, Seok-Min;Cho, Hyun-Chul;Lee, Su-Ho
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.502-507
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    • 2019
  • We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in Si. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of Si with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

RF and Optical properties of Graphene Oxide

  • Im, Ju-Hwan;Rani, J.R.;Yun, Hyeong-Seo;O, Ju-Yeong;Jeong, Yeong-Mo;Park, Hyeong-Gu;Jeon, Seong-Chan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.68.1-68.1
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    • 2012
  • The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

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Electrical and Optical Properties of Microwave Discharged Lamp (마이크로파 방전램프의 전기적/광학적 특성)

  • Lee, Jong-Chan;Hwang, Myung-Keun;Bae, Young-Jin;Her, Hyun-Soo;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.492-494
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    • 2002
  • The fundamental principles of the operation of microwave discharges that are used to convert microwave energy to broad spectrum visual light are known. In this paper, emission dependance of microwave discharges in mixture content of sulfur with noble gases was studied. It is shown that the excitation of this gaseous mixture is carried out in two phases: (1) ionization of noble gas atoms by a microwave field and (2) the consequent maintenance of slightly ionized nonequilibrium plasma by the field. These two processes have essentially various thresholds for the microwave pump. The purpose of this work is to investigate spectral properties of the high frequency discharges in a mixture sulfur vapors with noble gases.

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Fabrication and Magnetic Properties of Co Nanostructures in AAO Membranes

  • Jung, J.S.;Malkinski, L.;Lim, J.H.;Yu, M.;O'Connor, C.J.;Lee, H.O.;Kim, E.M.
    • Bulletin of the Korean Chemical Society
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    • v.29 no.4
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    • pp.758-760
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    • 2008
  • Nanoporous AAO (Anodic Aluminum Oxide) membranes have many advantages as a template for variety of magnetic materials. Materials can be embedded into the pores by electrodeposition, sputtering or magnetic-field-assisted infiltration of magnetic nanoparticles. This work focuses on the fabrication of the magnetic structures in the AAO templates by electrodeposition. Our method allows the controlled growth of Co nanostructures within the porous alumina membrane in the form of dots, rods and long wires. The shape of Co nanostructures has been investigated by field emission scanning electron microscope (FESEM). The magnetic hysteresis loops of Co nanostructures were measured using SQUID at 5 K and 300 K. The magnetic properties of the Co nanostructures are proportional to their aspect ratios and can be controlled by changing the aspect ratios.

Optical Properties of Sulfur and NaI by Microwave Discharge (마이크로파 방전에 의한 Sulfur와 NaI의 광학적 특성)

  • Lee, Jong-Chan;Hwang, Myung-Keun;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.109-111
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    • 2002
  • The fundamental principles of the operation of microwave discharges that are used to convert microwave energy to broad spectrum visual light are known. In this paper, emission dependance of microwave discharges in mixture content of sulfur with noble gases was studied. It is shown that the excitation of this gaseous mixture is carried out in two phases; (1) ionization of noble gas atoms by a microwave field and (2) the consequent maintenance of slightly ionized nonequilibrium plasma by the field. These two processes have essentially various thresholds for the microwave pump. The purpose of this work is to investigate spectral properties of the high frequency discharges in a mixture sulfur vapors with noble gases.

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Luminescence Study of Eu3+ Ions Doped BaMoO4 Nanoparticles

  • Bharat, L. Krishna;Lee, Soo Hyun;Yu, Jae Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.415.2-415.2
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    • 2014
  • Cost-effective, robust devices for solid-state lighting industry that converts electricity to light revolutionize the current lighting industry. Phosphor materials used in these devices should be synthesized in a low-cost and effective method for use in WLEDs. In this presentation, the synthesis of Eu3+ ions doped BaMoO4 phosphor samples by a facile synthesis process for red component of WLEDs will be shown. The tetragonal phase of the host lattice was substantiated by the X-ray diffraction patterns. The morphological studies were carried out by using a field-emission scanning electron microscope and transmission electron microscope. These confirmed the formation of a shuttle like particles with perpendicular protrusions in the middle of the particle. The photoluminescence (PL) properties exhibited good emission with a high asymmetry ratio when excited with ultraviolet B wavelengths (~ 280-315 nm). The cathodoluminescence (CL) spectra showed similar results to the PL spectra, indicating the rich red emission. The results suggest that this phosphor is a good material as red region component in the development of tri-band UV excitation based WLEDs.

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Sol- Gel Synthesis and Luminescent Properties of ${Y_2}{SiO_5}:Ce$ Blue Phosphors (${Y_2}{SiO_5}:Ce$ 청색 형광체의 졸-겔 합성 및 발광특성)

  • Lee, Jun;Han, Cheong-Hwa;Park, Hee-Dong;Yun, Sock-Sung
    • Korean Journal of Materials Research
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    • v.11 no.9
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    • pp.740-744
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    • 2001
  • The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

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Direct Growth of CNT on Cu Foils for Conductivity Enhancement and Their Field Emission Property Characterization (전도성 향상을 위한 구리호일 위 CNT의 직접성장 및 전계방출 특성 평가)

  • Kim, J.J.;Lim, S.T.;Kim, G.H.;Jeong, G.H.
    • Journal of the Korean Vacuum Society
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    • v.20 no.2
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    • pp.155-163
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    • 2011
  • Carbon nanotubes (CNT) have been attracted much attention since they have been expected to be used in various areas by virtue of their outstanding physical, electrical, and chemical properties. In order to make full use of their prominent electric conductivity in some areas such as electron emission sources, device interconnects, and electrodes in energy storage devices, direct growth of CNT with vertical alignment is definitely beneficial issue because they can maintain mechanical stability and high conductivity at the interface between substrates. Here, we report direct growth of vertically aligned CNT (VCNT) on Cu foils using thermal chemical vapor deposition and characterize the field emission property of the VCNT. The VCNT's height was controlled by changing the growth temperature, growth time, and catalytic layer thickness. Optimum growth condition was found to be $800^{\circ}C$ for 20 min with acetylene and hydrogen mixtures on Fe catalytic layer of 1 nm thick. The diameter of VCNT grown was smaller than that of usual multi walled CNT. Based on the result of field emission characterization, we concluded that the VCNT on Cu foils can be useful in various potential applications where high conductivity through the interface between CNT and substrate is required.