전기전자학회논문지 (Journal of IKEEE)

  • 제23권2호
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  • Pages.502-507
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  • 2019
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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준 2차원 시스템에서 전자 변위 포텐셜 상호 작용에 의한 Si의 양자 전이 특성

Qantum Transition properties of Si in Electron Deformation Potential Phonon Interacting Qusi Two Dimensional System

  • Joo, Seok-Min (Dept. of Electronical Engineering, Masan University) ;
  • Cho, Hyun-Chul (Dept. of Avionics & Aviation Maintenance Kyungbuk college) ;
  • Lee, Su-Ho (Dept. of Electronical Engineering, Donga University)
  • 투고 : 2019.06.07
  • 심사 : 2019.06.20
  • 발행 : 2019.06.30
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초록

우리는 준 2차원 Landau 분할 시스템의 양자 광학 전이 특성을 실리콘(Si)에서 이론적으로 고찰하였다. Squre wall 구속 포텐셜에 의한 전자 구속 시스템에 양자 수송 이론(QTR)을 적용하였습니다. 평형 평균 투영 계획(Equilibrium Average Projection Scheme : EAPS)으로 계획된 Liouville 방정식 방법을 사용하였으며, 양자 전이를 분석하기 위해 포톤 방출 전이과정과 포논 흡수 전이 과정의 두 전이 과정에서 QTLW와 QTLS의 온도와 자기장 의존성을 비교하였습니다. 이 연구를 통해 Si의 QTLW와 QTLS의 온도와 자기장의 증가하는 특성을 발견하였으며, 또한 우세한 산란 과정이 포논 방출 전이 과정이라는 것을 발견했다.

We investigated theoretically the quantum optical transition properties of qusi 2-Dinensinal Landau splitting system, in Si. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process. Through the analysis of this work, we found the increasing properties of QTLW and QTLS of Si with the temperature and the magnetic fields. We also found the dominant scattering processes are the phonon emission transition process.

키워드

JGGJB@_2019_v23n2_502_f0001.png 이미지

Fig. 1. Temperature dependence of QTLW γ(T) of Si, with λ=220, 394, 513, 550 and 720 μm (from the top line to the bottom line). 그림 1. 파장 λ=220, 394, 513, 550 and 720 μm에서 Si의 온도에 따른 QTLW의 값(γ(T))

JGGJB@_2019_v23n2_502_f0002.png 이미지

Fig. 2. Magnetic field dependence of QTLW γ(B) of Si, with λ=220, 394, 513, 550 and 720 μm(from the top line) 그림 2. 파장 λ=220, 394, 513, 550 and 720 μm에서 Si의 자기장에 따른 QTLW의 값(γ(B))

JGGJB@_2019_v23n2_502_f0003.png 이미지

Fig. 3. Comparisons of the temperature dependence of QTLW of Si, γ(T)total, γ(T)emandγ(T)ab with λ=394μm. 그림 3. 파장 λ=394μm에 있어 Si의 QTLW의 값 γ(T)total, γ(T)em 및 γ(T)ab의 온도의존성

JGGJB@_2019_v23n2_502_f0004.png 이미지

Fig. 4. Comparisons of the magnetic field dependence of QTLW of Si, γ(B)total, γ(B)em and γ(B)ab at T=50K. 그림 4. 온도 T=50K에서 Si의 QTLW의 값, γ(B)ab 및 γ(B)total, γ(B)em의 자기장 의존성

JGGJB@_2019_v23n2_502_f0005.png 이미지

Fig. 5. The Magnetic Field dependence of normalized P(B) (QTLS) of Si with λ=394 μm the at T=50,70,90,120 and 210K. (from the bottom line to top) 그림 5. 온도 T=50, 70, 90, 120 및 210K에서 파장 λ=393μm에대한 Si의 QTLS의 흡수력 P(B)의 자기장 의존성

JGGJB@_2019_v23n2_502_f0006.png 이미지

Fig. 6. The relativity frequency dependence of (QTLS) P(Δω) of Si and the magnetic field dependence of the absorption power, P(B) (QTLS) with λ=220, 394, 513, 550 and 550 μm at T=50K. 그림 6. 최대 흡수 전력의 자기장 의존성과 온도 T=50K에서 λ=220, 394, 513, 550 및 720μm 인 Si의 흡수력(QTLS) P(Δω)의 상대 주파수 의존성

Table 1. Material constant of Si. 표 1. Si의 물질 상수

JGGJB@_2019_v23n2_502_t0001.png 이미지

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