• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.384-384
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• 2011

Carbon nanotubes (CNTs) have been studied as an ideal material for field emitters due to the high aspect ratio, excellent electrical property and good mechanical strength. There were many reports on CNT emitters fabricated on rigid substrates, but rare reports about CNT flexible field emitters. Recently, we considered that CNTs can be a good candidate for a flexible field emitter material because of their excellent Young's modulus and elasticity, which could not be achieved with metal tips or semiconducting nanowire tips. In this work, we demonstrated the CNT flexible field emitters fabricated by a simple method and studied the field emission properties of the CNT flexible field emitters under various bending conditions. The flexible field emitters showed stable and uniform emission characteristics. Especially, there is no remarkable change of the field emission properties at the CNT flexible field emitters according to the bending conditions. The CNT flexible field emitters also exhibited a good field emission performance like the low turn-on field and high emission current. Therefore, we suggest that the CNT flexible emitters can be used in many practical applications under different bending conditions.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.326-331
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• 2000

We have fabricated the field emitter arrays coated with diamond-like carbon (DLC) films that improved the field emission characteristics. The nitrogen doped DLC films are prepared by the filtered cathodic vacuum are (FCVA) tehnique. The activation energy of the nitrogen doped DLC films are derived from electrical conductivity measurements. The silicon field emission arrays (FEAs) were prepared by the VLSI technique. The turn-on field was rapidly decreasing and the emission current was remarkably increasing the DLC-coated FEAs than the non-coated silicon FEAs. In the nitrogen doped FEAs, the turn-on field decreased and the emission current increased with increasing the nitrogen found out the field emission current and the work function of the DLC-coated FEAs was remarkably decreased than that of the non-coated silicon FEAs. As nitrogen doping concentrations are increased the work function of FEAs is decreased and the field emission properties are improved in nitrogen doped DLC-coated FEAs. This phenomenon in due the fact that the Fermi energy level moves to the conduction band by increasing nitrogen doping concentration.

• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.234-240
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• 2001

Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

• Journal of Information Display
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• 제9권4호
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• pp.30-34
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• 2008

Field emitter arrays (FEAs) were developed using carbon nanotubes (CNTs) as electron emission sources. The CNTs were grown using a selective-positioning technique with a resist-protection layer. The light emission properties were studied through the electron emission of the CNTs on patterned islands, which were modulated with island diameter and spacing. The electron emission of CNT arrays with $5{\mu}m$ diameters and $10{\mu}m$ heights increased with increased spacing (from $10{\mu}m$ to $40{\mu}m$). The electron emission current of the $40-{\mu}m$-island-spacing sample showed a current density of 1.33 mA/$cm^2$ at E = 11 V/${\mu}m$, and a turn-on field of 7 V/${\mu}m$ at $1{\mu}A$ emission current. Uniform electron emission current and light emission were achieved with $40{\mu}m$ island spacing and $5{\mu}m$ island diameter.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.90-91
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• 2007

Nano-sized conical-type tungsten(W) field-emitters based on carbon nanotubes(CNTs) are fabricated with the configuration of CNTs/catalyst/buffer/W-tip by adopting various buffer layers, such as TiN, Al, Al/TiN, and Al/hi/TiN. This study focuses on elucidating how the buffer layers affect the structural properties of CNTs and the electron-emission characteristics of CNT-emitters. Field-emission scanning electron microscopy(FESEM) and high-resolution transmission electron microscopy(HRTEM) are used to monitor the nanostructures and surface morphologies of all the catalysts and CNTs grown. The crystalline structure of CNTs is also characterized by Raman spectroscopy. Furthermore, the measurement of field-emission characteristics for all the field-emitters fabricated shows that the emitter using the Al/Ni/TiN stacked buffer reveals the most excellent performances, such as maximum emission current of $202{\mu}A$, threshold field of 2.08V/${\mu}m$, and long-term (up to 24h) stability of emission current.

• Journal of Information Display
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• 제2권3호
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• pp.78-85
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• 2001

The growth of carbon nanotubes(CNTs) in anodic aluminum oxide(AAO) template and their application to a field emitter are described. AAO templates were fabricated by anodizing bulk aluminum and sputtered thin Al film on Nb-coated Si wafers. After Co catalyst had been electrochemically deposited into the bottom of the pores in AAO template, CNTs were grown by pyrolyzing $C_2H_2$. Depending on the reaction conditions, CNTs grew up to or over the top of the pores in AAO template with different structures. The morphology and structure of CNTs were observed with a scanning electron microscope and a transmission electron microscope. The diameter of CNTs strongly depended on the size of the pores in AAO template and the growing conditions. The electron field emission measurement of the samples resulted in the turn-on field of 1.9-2.2 $V/{\mu}m$ and the field enhancement factor of 2450-5200. The observation of high field enhancement factors is explained in terms of low field screening effect.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.923-926
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• 2004

Active-matrix field emission display (AMFED) based on carbon nanotube (CNT) emitter and amorphous silicon thin-film transistor (a-Si TFT) is reviewed. The AMFED pixels consisted of a high-voltage a-Si TFT and mesh-gated CNT emitters. The developed AMFED panel showed a high performance with a driving voltage of below 15 V. The low-cost and large-area AMFED approach with a metal mesh technology will be discussed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.277-280
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• 2007

Field emission-back light unit (FE-BLU) was fabricated using carbon nanotube (CNT) emitter. Local dimming and local brightening techniques were achieved, which results in very high contrast ratio. In addition, the motion blur phenomenon, one of the serious problems of liquid crystal display (LCD) with cold cathode fluorescent lamp (CCFL)-BLU, was removed from LCD-TV by using FE-BLU.

• Journal of Information Display
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• 제4권2호
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• pp.35-42
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• 2003

The field emission and luminescent properties of carbon nanotubes (CNTs) that were straightened by argon ion irradiation were investigated. Argon ion irradiation permanently straightened both as-grown and screen-printed CNTs (SP-CNTs) in the presence of a strong electric field. The straightening process enhanced the emission properties of as-grown CNT films by showing a decrease in turn-on field, an increase in total emission current, and a stable emission. Recurring problems associated with SP-CNTs, such as bent or/and buried CNTs and the degradation in binder-residue-induced emission, were improved by the permanent straightening of CNTs and protruding CNTs from binders by the irradiation treatment, in addition to its surface cleaning effect. Furthermore, we confirmed that the number of emission sites increases by observing the luminescent properties of CNT films after the straightening. These findings here suggest that ion irradiation treatment is an effective method for achieving uniform field emission and to reduce the electrical aging time.