Browse > Article

Enhanced Field Emission and Luminescent Properties of Straightened Carbon Nanotubes to be Applied in Field Emission Display  

Lee, Hyeong-Rag (Department of Physics, Nanophyscis and Technology Laboratory (NPTL), Kyungpook National University)
Kim, Do-Hyung (Department of Physics, Nanophyscis and Technology Laboratory (NPTL), Kyungpook National University)
Kim, Chang-Duk (Department of Physics, Nanophyscis and Technology Laboratory (NPTL), Kyungpook National University)
Jang, Hoon-Sik (Department of Physics, Nanophyscis and Technology Laboratory (NPTL), Kyungpook National University)
Publication Information
Abstract
The field emission and luminescent properties of carbon nanotubes (CNTs) that were straightened by argon ion irradiation were investigated. Argon ion irradiation permanently straightened both as-grown and screen-printed CNTs (SP-CNTs) in the presence of a strong electric field. The straightening process enhanced the emission properties of as-grown CNT films by showing a decrease in turn-on field, an increase in total emission current, and a stable emission. Recurring problems associated with SP-CNTs, such as bent or/and buried CNTs and the degradation in binder-residue-induced emission, were improved by the permanent straightening of CNTs and protruding CNTs from binders by the irradiation treatment, in addition to its surface cleaning effect. Furthermore, we confirmed that the number of emission sites increases by observing the luminescent properties of CNT films after the straightening. These findings here suggest that ion irradiation treatment is an effective method for achieving uniform field emission and to reduce the electrical aging time.
Keywords
carbon nanotube; straightening; enhancement; field emitter displays;
Citations & Related Records
연도 인용수 순위
  • Reference
1 M. S. Dresselhaus, G. Dresselhaus, and Ph. Avouris, Carbon Nanotubes synthesis, Structure, Properties, and Applications, (Springer, 2000), p. 391
2 K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, G. Priro, P. Legagneux, F. Wyczisk, D. Pribat, and D. G. Hasko, Appl. Phys. Lett. 80, 2011 (2002)   DOI   ScienceOn
3 W. Zhu, C. Bower, O. Zhou, G. Kochanski, and S. Jin, Appl. Phys. Lett. 75, 2549 (1999)
4 R.H. Baughamn, C. Cui, A.A. Zakhidov, Z. Lqbal, J.N. Barisci, G.M. Spinks, G.G. Wallace, A. Mazzoldi, D.D. Rossi, A.G. Rinzler, O. Jaschinski, S. Roth, and M. Kertesz, Science 284, 1340 (1999)   DOI   ScienceOn
5 J. -M Bonard, K. A. Dean, B. F. Coll, and C. Klinke, Phys. Rev. Lett. 89, 197602 (2002)   DOI   ScienceOn
6 J. S. Kim, K. S. Ahn, C. O. Kim, and J. P. Hong, Appl. Phys. Lett. 82, 1607 (2003)   DOI   ScienceOn
7 F. Tuinstra, J. L. Koenig, J. Chem. Phys., 53, 1126 (1970)   DOI
8 D. -H Kim, H. -S. Yang, H. -D. Kang, and H. -R. Lee, Chem. Phys. Lett. 368, 439 (2003)   DOI   ScienceOn
9 Z. F. Ren, Z. P. Huang, J. W. Xu, J. H. Wang, P. Bush, M. P. Siegal, and P. N. Provencio, Science 282, 1105 (1998)   DOI   ScienceOn
10 D. G. McCulloch, S. Prawer, and A Hoffman, Phys. Rev. B 50, 5905 (1994)
11 A. Sawada, M. Iriguchi, W. J. Zhao, X. Ochiai, and M. Takai, Proc. 14th Int. Vacuum Microelectronics Conf., 29 (2001)
12 A. Wadhawan, R. E. Stallcup II, and J. M. Perez, Appl. Phys. Lett. 78, 108 (2001)   DOI   ScienceOn
13 V. Semet, Vu Thien Binh, P. Vincent, D. Guillot, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, P. Legagneux, and D. Pribat, Appl. Phys. Lett. 81, 343 (2002)   DOI   ScienceOn
14 W. Yi, T. W. Jeong, S. G. Yu, J. N. Heo, C. S. Lee, J. H. Lee, W. S. Kim, J. -B. Yoo, and J. M. Kim, Adv. Mater. 14, 1464 (2002)   DOI   ScienceOn
15 J. S. Suh, K. S. Jeong, J. S. Lee, and I. Han, Appl. Phys. Lett. 80, 2392 (2002)   DOI   ScienceOn
16 C. J. Edgcombe and U. Valdr$`e$, Philos. Mag. B 82, 987 (2002)
17 Y. Wei, C. Xie, K. A. Dean, and B. F. Coll, Appl. Phys. Lett. 79, 4527 (2001)   DOI   ScienceOn
18 X. Xu and G. R. Brandes, Appl. Phys. Lett. 74, 2549 (1999)   DOI   ScienceOn
19 M. Shiraishi and M. Ata, Carbon 29, 1913 (2001)
20 R. H. Fowler and L. Nordheim, Proc. R. Soc. London Ser. A 119,173 (1928)
21 S. H. Choi, H. H. Han, T. Y. Lee, J. B. Yoo, and C. Y. Park, Proc. 14th Int. Vacuum Microelectronics Conf., 35, (2001)
22 S. Fan, M. G. Chapline, N. R. Franklin, T. W. Thobler, A. M. Cassell, and H. Dai, Science 283, 512 (1999)   DOI   ScienceOn
23 Philip Kim and C.M. Lieber, Science 286, 2148 (1999)   DOI   ScienceOn
24 C. Y. Zhi, X. D. Bai, and E. G. Wang, Appl. Phys. Lett.81, 1690 (2002)   DOI   ScienceOn
25 L. Nilsson, O. Groening, C. Emmemegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, K. -M. Bonard, and K. Kern, Appl. Phys. Lett. 76, 2071 (2000)   DOI   ScienceOn
26 D. Tomanek and R. J. Enbody, Science and Applications of Nanotubes, (Kluwer Academic/Plenum Publisher, New York, (1999), P. 239
27 J. T. L. Thong, C. H. Oon, W. K. Eng, W. D. Zhang, and L. M. Gan, Appl. Phys. Lett. 79, 2811 (2001)   DOI   ScienceOn
28 W. A. de Heer, A. Ch$\^a$telain, and D. Ugarte, Science 270, 1179 (1995)   DOI   ScienceOn
29 D. -H. Kim, H. -R. Lee, M. -W. Lee, J. -H. Lee, J. -G. Jee, and S. -Y. Lee, Chem. Phys. Lett. 355, 53 (2002)   DOI   ScienceOn