• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1529-1531
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• 2008

Since the discovery over a decade ago, carbon nanotubes (CNTs) have been attracting considerable attentions both from scientists and engineers. Because of the excellent field emission properties, such as high aspect ratio, extremely small diameter, and high emission current, CNTs become a potential candidate as field emitter for field emission display (FED) and lighting (FEL) as backlight for LCD. Due to the exceptional physical properties, such as superior thermal and electrical conductivities, as well as high stiffness and strength, the CNT-based composites can be as light-weight heat-sink or thermal spreader materials used for power electronic devices, such as power LED for general illumination. The CNTs for above applications will be reviewed, and related materials and devices will be demonstrated in this paper.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.12-17
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• 2008

Carbon nanotube (CNT) cathodes were fabricated using nano-sized silver (Ag) powders as a bonding material between the CNTs and cathode electrodes. The effects of the powder size on the sintering behavior, the current density and emission image for CNT cathodes were investigated. As the diameter of the Ag powders decreases to 10 nm, the sintering temperature of the CNT cathode was lowered primarily due to the higher specific surface area of the Ag powders. In this study, it was demonstrated that nano-sized Ag powders can be feasibly used as a bonding material for a screen-printed CNT cathode, yielding a high current density and a uniform emission image.

• Journal of the Korean institute of surface engineering
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• v.38 no.4
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• pp.163-166
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• 2005

Carbon nanotube-copper composite structures were fabricated using composite plating method and their field emission characteristics were investigated. Multi-walled carbon nanotubes (MWNTs) synthesized by chemical vapor deposition were used in the present study. It was revealed that turn-on field was about $3.0\;V/{\mu}m$ with the current density of $0.1\;{\mu}A/cm^2.$ We observed relatively uniform emission characteristics as well as stable emission current Carbon nanotube-copper composite plating method is efficient and it has no intrinsic limit on the deposition area. Moreover, it gives strong adhesion between emitters and an electrode. Therefore, we recommend that carbon nanotube-copper composite plating method can be applied to fabricate electron field emitters for large area FEDs and large area vacuum lighting sources.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.65-73
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• 1999

Si-tip FEAs were fabricated by a lift-off based process and their operating properties were evaluated. The dependence of emission current on applied gate and anode voltages, maximum emission current, hysteresis phenomena, MOSFET-type curves, current fluctuation, light emission from the emitted electrons, and failure mechanism of the device were widely discussed based on the experimental results.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.31.1-31.1
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• 2021

We report the Gemini Multi-Object Spectrograph (GMOS) Integral Field Unit (IFU) observation of a red active galactic nucleus (AGN), 2MASSJ165939.7+183436 (1659+1834). 1659+1834 is a prospective merging supermassive black hole (SMBH) candidate due to its merging features and double-peaked broad emission lines. The double-peaked broad emission lines are kinematically separated by 3000 km/s, with the SMBH of each component weighing at 10^8.9 and 10^7.1 solar mass. Our GMOS IFU observation reveals that the two components of the double-peaked broad emission line are spatially separated by 0.085" (~250pc). In different assumptions for the line fitting, however, a null (<0.05") or a larger spatial separation (~0.15") are also possible. For this GMOS IFU observational results of 1659+1834, various models can be viable solutions, such as the disk emitter and multiple SMBH models. We believe that these results show the need for future research of finding more multiple SMBH systems in red AGNs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.463-464
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• 2006

광산업 및 디스플레이 산업의 발전에 따라 관련 제품의 핵심 부품 및 소재 개발이 매우 중요하게 대두되고 있다. 전계방출 소자 및 back light가 되는 나노 발광체의 핵심소재중 하나인 CNT paste는 국내외에서 연구가 진행중이다. 본 연구에서는 메탄올속에서 초음파를 이용하여 분산시킨 CNT 분말, 유기 바인더, 용매, glass frit, Ag powder 등을 사용하여 paste를 만들고, TGA(Thermogravimetric Analyzer)와 SEM(Scanning Electron Microscopy) 분석에 의해 제조 공정의 최적화를 실시하였다.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1440-1441
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• 1995

We fabricated diode-type silicon field emitter array device and tested the current-voltage characteristics. Silicon oxide layer having the thickness of $1{\mu}m$ is grown in the (100) oriented n-type silicon substrates. Oxide layer is patterned by the mask with $10{\mu}m$ diameter circles. Silicon substrate is then etched using NAF 1 solution to form the sharp tip arrays as an electron source. In the UHV test station, we tested the current-voltage characteristics for the samples. Turn-on voltage was about 140V and maximum emission current was $310{\mu}A$ at 164V. We studied about silicon bonding process for future work, too.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.88-93
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• 1998

The fabrication process and emission characteristics of gated silicon field emitter arrays(FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 $\mu$m and the end radius of the tips was smaller than 100 $\AA$. The emission current meaured from the fabricated 2809 tips array was about 31 $\mu$A at a gate voltage of 80 V.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.403-408
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• 2011

To develop the MFX (Micro-Focus X-ray) tube, the trajectories of electrons emitted from the field emission cathode was simulated using SIMION program. Regardless of starting position of the electron in emitter, we found out the fact that there is the optimum extractor voltage Ve, which can focus the electron beam on one place. Extractor voltage Ve varies depending on the source voltage Vs, but the ratio of two voltages (Ve/Vs) is always constant, its value was 99.4%. When the ratio of two voltages (Ve/Vs) was 99.4%, the beam diameter in the cross-over point was $1.2{\mu}m$. Because the focal spot size in MFXG (Micro-Focus X-ray Generator) can not be less than the cross-over diameter within MFX tube, it is important to find out the conditions that can make a smaller beam diameter. Therefore, the above results is considered to be a very important ones in the development of the MFXG.