• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.71-75
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• 2003

Carbon nanotubes(CNTs) are grown by using Co catalyst metal. CNTs fabricated by PECVD(plasma enhanced chemical vapor deposition) method are studied in terms of surface reaction and surface structure by TEM and Raman analysing method and are analysed in its electrical field emission characteristics with variation of space between anode and cathode. Acetylene($C_2H_2$) gas is used as the carbon source, while ammonia and hydrogen gas are used as catalyst and dilution gas. The CNTs grown by hydrogen($H_2$) gas plasma indicates better vertical alignment, lower temperature process and longer tip, compared to that grown by ammonia($NH_3$) gas plasma. The CNTs fabricated with Co(cobalt) catalyst metal and PECVD method show the multiwall structure in mid-circle type in tip-end and the inner vacancy of 10nm. Emission properties of CNTs indicate the turn-on field to be $2.6\;V/{\mu}m$. We suggest that CNTs can be possibly applied to the emitter tip of FEDs and high brightness flat lamp because of low temperature CNTs growth, low turn-on field.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.409-413
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• 2001

In the electron-gun of CRT, the Mo-tip FEA was employed as cold cathode in order to replace the conventional thermal cathode. The Mo-tip FEA was designed and fabricated according to CRT specification and mounted on the electron-gun. It was known that fabricated cold cathode electron-gun showed better performance in terms of maximum emission current and switch-on time when compared with the ones of thermal cathode electron-gun, but some geometrical structures in the inside of electron-gun must be changed to reduce the gate leakage current. Finally, the potential applicability was guaranteed by means of operating the 19 inch-sized LG-color CRT using the fabricated cold cathode electron-gun.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.51-51
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• 2008

Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.62-62
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• 1999

Carbon based materials have many attractive properties such as a wide band gap, a low electron affinity, and a high chemical and mechanical stability. Therefore, researches on the carbon-based materials as field emitters have been drawn extensively to enhance the field emission properties. Especially, diamond gives high current density, high current stability high thermal conductivity durable for high temperature operation, and low field emission behaviors, Among these properties understanding the origin of low field emission is a key factor for the application of diamond to a filed emitter and the verification of the emission site and its distribution of diamond is helpful to clarify the origin of low field emission from diamond There have been many investigations on the origin of low field emission behavior of diamond crystal or chemical vapor deposition (CVD) diamond films that is intentionally doped or not. However, the origin of the low field emission behavior and the consequent field emission mechanism is still not converged and those may be different between diamond crystal and CVD diamond films as well as the diamond that is doped or not. In addition, there have been no systematic studies on the dependence of nondiamond carbon on the spatial distribution of emission sites and its uniformity. Thus, clarifying a possible mechanism for the low field emission covering the diamond with various properties might be indeed a difficult work. On the other hand, it is believed that electron emission mechanisms of diamond are closely related to the emission sites and its distributions. In this context, it will be helpful to compare the spatial distribution of emission sites and field emission properties of the diamond films prepared by systematic variations of structural property. In this study, we have focused on an understanding of the field emission variations of structural property. In this study, we have focused on an understanding of the field emission mechanism for the CVD grown undoped polycrystalline diamond films with significantly different structural properties. The structural properties of the films were systematically modified by varying the CH4/H2 ratio and/or applying positive substrate bias examined. It was confirmed from the present study that the field emission characteristics are strongly dependent on the nondiamond carbon contents of the undoped polycrystalline diamond films, and a possible field emission mechanism for the undoped polycrystalline diamond films is suggested.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.851-854
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• 2004

By approaching the counter electrode to the CNT emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 ms/$cm^2$, which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 ${\mu}m$. The gate current was less than 10 % of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.154-154
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• 2008

Although the screen printing technology using photosensitive carbon nanotube (CNT) paste has many advantages such as low cost, simple process, uniform emission, and capability of mass production, the CNT paste needs to be improved further in CNT dispersion, printability, adhesion, electrical conductivity, population of CNT emitters, etc. Ball milling has been frequently employed to prepare the CNT paste as ball milling can mix its ingredients very well and easily cut the long, entangled CNTs. This study carried out a parametric approach to fabricating the CNT paste in terms of low-energy ball milling and a paste composition. Field emission properties of the CNT paste was characterized with CNT dispersion and electrical conductivity which were measured by a UV-Vis spectrophotometer and a 4-point probe method, respectively. Main variables in formulating the CNT paste include a length of milling time, and amounts of CNTs and conductive inorganic fillers. In particular, we varied not only the contents of conductive fillers but also used two different sizes of filler particles of ${\mu}m$ and nm ranges. Among many variations of conductive fillers, the best field emission characteristics occurred at the 5 wt% fillers with the mixing ratio of 3:1 for ${\mu}m$-and nm-sizes. The amount and size of fillers has a great effect on the morphology, processing stability, and field emission characteristics of CNT emitter dots. The addition a small amount of nm-size fillers considerably improved the field emission characteristics of the photosensitive CNT paste.

• Applied Microscopy
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• v.47 no.1
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• pp.55-62
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• 2017

This paper describes experiments aimed at characterizing the behavior of field electron emitters fabricated by coating carbon fibers with epoxylite resin. Polyacrylonitrile carbon fibers of type VPR-19, thermally treated at $2,800^{\circ}C$, were used. Each was initially prepared in a "uncoated" state, by standard electro polishing and cleaning techniques, and was then examined in a scanning electron microscope. The fiber was then baked overnight in a field electron microscope (FEM) vacuum chamber. Current-voltage characteristics and FEM images were recorded on the following day or later. The fiber was then removed from the FEM, coated with resin, "cured" by baking, and replaced in the FEM. After another overnight bake, the FEM characterization measurements were repeated. The coated fibers had significantly better performance than uncoated fibers. This confirms the results of earlier experiments, and is thought to be due in part to the formation of a conducting channel in the resin over layer. For the coated fiber, lower voltages were needed to obtain the same emission current. The coated fibers have current-voltage characteristics that show smoother trends, with greater stability and repeatability. No switch-on phenomena were observed. In addition, the emission images on the phosphor-coated FEM screen were more concentrated, and hence brighter.

• Electrical & Electronic Materials
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• v.15 no.12
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• pp.11-18
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• 2002

전계 방출 디스플레이(Field Emission Display : FED)는 금속 또는 반도체로 만들어진 극미세 구조의 전계 에미터(field emitter)에 전기장을 인가하여 진공 속으로 방출되는 전자를 형광체에 충돌시켜 화상을 표시하는 디스플레이 소자로서, 원리적으로 브라운관(CRT)의 우수한 표시 특성을 그대로 가지면서 경량 박형화가 가능하기 때문에 'Thin CRT'라고 불리기도 한다 FED는 원리적으로 고휘도, 저소비전력, 빠른 응답속도, 광시야각, 고해상도, 우수한 칼라 표시. 넓은 사용온도 범위 등 CRT 및 평판 디스플레이의 장점을 모두 갖추고 있는 이상적인 디스플레이 소자로 평가되어 1990년대 초반부터 세계 유수의 연구 기관들이 본격 적 인 연구 개발을 추진하여 왔지만, 아직까지 평판 디스플레이 시장에 진입 할 만큼 기술 개발이 이루어지지 못하고 있다. 본 고에서는 FED의 근간이 되는 전계방출 소자의 원리 및 종류, FED의 핵심요소 기술, 최근 연구 개발 동향, FED의 응용 분야 및 상용화 가능성 등에 대하여 살펴보기로 한다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.532-535
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• 2001

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.